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Class Information
Number: 438/559
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From solid dopant source in contact with semiconductor region > Using capping layer over dopant source to prevent out-diffusion of dopant
Description: Processes including use of an overlying layer of material to prevent the diffusion of the electrically active impurity in the dopant source from moving therethrough.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8580664 Method for forming ultra-shallow boron doping regions by solid phase diffusion Nov. 12, 2013
8569158 Method for forming ultra-shallow doping regions by solid phase diffusion Oct. 29, 2013
8563403 Three dimensional integrated circuit integration using alignment via/dielectric bonding first and through via formation last Oct. 22, 2013
8561003 N-channel and P-channel finFET cell architecture with inter-block insulator Oct. 15, 2013
8501605 Methods and apparatus for conformal doping Aug. 6, 2013
8293553 Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element Oct. 23, 2012
8222129 Method for manufacturing solar cell Jul. 17, 2012
8163639 Photo diode and method for manufacturing the same Apr. 24, 2012
8124502 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation Feb. 28, 2012
7989329 Removal of surface dopants from a substrate Aug. 2, 2011
7947585 Method of manufacturing semiconductor device May. 24, 2011
7754551 Method for making very low V.sub.t metal-gate/high-.kappa. CMOSFETs using self-aligned low temperature shallow junctions Jul. 13, 2010
7737014 Reduction of boron diffusivity in pFETs Jun. 15, 2010
7732311 Methods of manufacturing semiconductor devices Jun. 8, 2010
7709365 CMOS well structure and method of forming the same May. 4, 2010
7696037 CMOS (complementary metal oxide semiconductor) technology Apr. 13, 2010
7282428 Method for solid phase diffusion of zinc into an InP-based photodiode and an InP photodiode made with the method Oct. 16, 2007
7109100 Semiconductor device and method for manufacturing semiconductor device Sep. 19, 2006
6930007 Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance Aug. 16, 2005
6893947 Advanced RF enhancement-mode FETs with improved gate properties May. 17, 2005
6806173 Method for producing highly doped semiconductor components Oct. 19, 2004
6743704 Method of manufacturing a semiconductor device Jun. 1, 2004
6723587 Ultra small-sized SOI MOSFET and method of fabricating the same Apr. 20, 2004
6695903 Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors Feb. 24, 2004
6642119 Silicide MOSFET architecture and method of manufacture Nov. 4, 2003
6613974 Tandem Si-Ge solar cell with improved conversion efficiency Sep. 2, 2003
6555451 Method for making shallow diffusion junctions in semiconductors using elemental doping Apr. 29, 2003
6506653 Method using disposable and permanent films for diffusion and implant doping Jan. 14, 2003
6498079 Method for selective source diffusion Dec. 24, 2002
6492239 Method for fabricating avalanche photodiode Dec. 10, 2002
6458693 Method of manufacturing a semiconductor device Oct. 1, 2002
6448105 Method for doping one side of a semiconductor body Sep. 10, 2002
6380040 Prevention of dopant out-diffusion during silicidation and junction formation Apr. 30, 2002
6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device Jan. 22, 2002
6291328 Opto-electronic device with self-aligned ohmic contact layer Sep. 18, 2001
6187678 High density integrated circuit packaging with chip stacking and via interconnections Feb. 13, 2001
6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method Jan. 30, 2001
6169005 Formation of junctions by diffusion from a doped amorphous silicon film during silicidation Jan. 2, 2001
6124167 Method for forming an etch mask during the manufacture of a semiconductor device Sep. 26, 2000
6057216 Low temperature diffusion process for dopant concentration enhancement May. 2, 2000
5985768 Method of forming a semiconductor Nov. 16, 1999
5976939 Low damage doping technique for self-aligned source and drain regions Nov. 2, 1999
5972752 Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile Oct. 26, 1999
5956604 Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt Digermanide Sep. 21, 1999
5888890 Method of manufacturing field effect transistor Mar. 30, 1999
5804463 Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors Sep. 8, 1998
5801087 Method of forming improved contacts from polysilicon to siliconor other polysilicon layers Sep. 1, 1998
5792700 Semiconductor processing method for providing large grain polysilicon films Aug. 11, 1998
5766981 Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD Jun. 16, 1998
5700714 Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate Dec. 23, 1997

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