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Class Information
Number: 438/558
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From solid dopant source in contact with semiconductor region
Description: Processes wherein the electrically active impurity is produced by a solid substance which is in physical contact with the semiconductor region to be doped.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7625812 |
Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires |
Dec. 1, 2009 |
| 7615393 |
Methods of forming multi-doped junctions on a substrate |
Nov. 10, 2009 |
| 7611977 |
Process of phosphorus diffusion for manufacturing solar cell |
Nov. 3, 2009 |
| 7605052 |
Method of forming an integrated circuit having a device wafer with a diffused doped backside layer |
Oct. 20, 2009 |
| 7572691 |
Non-volatile memory and method of fabricating the same |
Aug. 11, 2009 |
| 7557023 |
Implantation of gate regions in semiconductor device fabrication |
Jul. 7, 2009 |
| 7507648 |
Methods of fabricating crystalline silicon film and thin film transistors |
Mar. 24, 2009 |
| 7485551 |
Semiconductor-on-insulator type heterostructure and method of fabrication |
Feb. 3, 2009 |
| 7485555 |
Methods for forming a P-type polysilicon layer in a semiconductor device |
Feb. 3, 2009 |
| 7459375 |
Transfer method for forming a silicon-on-plastic wafer |
Dec. 2, 2008 |
| 7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device |
Oct. 21, 2008 |
| 7435668 |
Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions |
Oct. 14, 2008 |
| 7364995 |
Method of forming reduced short channel field effect transistor |
Apr. 29, 2008 |
| 7326631 |
Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another |
Feb. 5, 2008 |
| RE39988 |
Deposition of dopant impurities and pulsed energy drive-in |
Jan. 1, 2008 |
| 7303967 |
Method for fabricating transistor of semiconductor device |
Dec. 4, 2007 |
| 7247548 |
Doping method and semiconductor device using the same |
Jul. 24, 2007 |
| 7235468 |
FinFET device with reduced DIBL |
Jun. 26, 2007 |
| 7226803 |
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation |
Jun. 5, 2007 |
| 7157374 |
Method for removing a cap from the gate of an embedded silicon germanium semiconductor device |
Jan. 2, 2007 |
| 7144751 |
Back-contact solar cells and methods for fabrication |
Dec. 5, 2006 |
| 7118997 |
Implantation of gate regions in semiconductor device fabrication |
Oct. 10, 2006 |
| 7118976 |
Methods of manufacturing MOSFETs in semiconductor devices |
Oct. 10, 2006 |
| 7045417 |
Method of manufacturing semiconductor device |
May. 16, 2006 |
| 7033916 |
Shallow junction semiconductor and method for the fabrication thereof |
Apr. 25, 2006 |
| 7011734 |
Method of manufacturing semiconductor device having silicide layer |
Mar. 14, 2006 |
| 6972222 |
Temporary self-aligned stop layer is applied on silicon sidewall |
Dec. 6, 2005 |
| 6960486 |
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material |
Nov. 1, 2005 |
| 6924200 |
Methods using disposable and permanent films for diffusion and implantation doping |
Aug. 2, 2005 |
| 6872644 |
Semiconductor device with non-compounded contacts, and method of making |
Mar. 29, 2005 |
| 6872643 |
Implant damage removal by laser thermal annealing |
Mar. 29, 2005 |
| 6852611 |
ROM embedded DRAM with dielectric removal/short |
Feb. 8, 2005 |
| 6849529 |
Deep-trench capacitor with hemispherical grain silicon surface and method for making the same |
Feb. 1, 2005 |
| 6828214 |
Semiconductor member manufacturing method and semiconductor device manufacturing method |
Dec. 7, 2004 |
| 6825104 |
Semiconductor device with selectively diffused regions |
Nov. 30, 2004 |
| 6803287 |
Method for forming a semiconductor device having contact wires of different sectional areas |
Oct. 12, 2004 |
| 6784018 |
Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
Aug. 31, 2004 |
| 6774013 |
N-type boron-carbide semiconductor polytype and method of fabricating the same |
Aug. 10, 2004 |
| 6764906 |
Method for making trench mosfet having implanted drain-drift region |
Jul. 20, 2004 |
| 6746934 |
Atomic layer doping apparatus and method |
Jun. 8, 2004 |
| 6730585 |
Method of fabricating high-voltage transistor with buried conduction layer |
May. 4, 2004 |
| 6723587 |
Ultra small-sized SOI MOSFET and method of fabricating the same |
Apr. 20, 2004 |
| 6703277 |
Reducing agent for high-K gate dielectric parasitic interfacial layer |
Mar. 9, 2004 |
| 6695903 |
Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
Feb. 24, 2004 |
| 6642152 |
Method for ultra thin resist linewidth reduction using implantation |
Nov. 4, 2003 |
| 6642134 |
Semiconductor processing employing a semiconductor spacer |
Nov. 4, 2003 |
| 6613626 |
Method of forming CMOS transistor having a deep sub-micron mid-gap metal gate |
Sep. 2, 2003 |
| 6613655 |
Method of fabricating system on chip device |
Sep. 2, 2003 |
| 6596556 |
Light emitting diode and a method for manufacturing the same |
Jul. 22, 2003 |
| 6569738 |
Process for manufacturing trench gated MOSFET having drain/drift region |
May. 27, 2003 |
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