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Class Information
Number: 438/557
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From melt
Description: Processes wherein the source of the electrically active impurity is molten material.

Patents under this class:

Patent Number Title Of Patent Date Issued
8236677 RTA for fabrication of solar cells Aug. 7, 2012
8216926 Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them Jul. 10, 2012
7989329 Removal of surface dopants from a substrate Aug. 2, 2011
7915154 Laser diffusion fabrication of solar cells Mar. 29, 2011
7875525 Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor Jan. 25, 2011
7838419 Systems and methods to laminate passives onto substrate Nov. 23, 2010
7615393 Methods of forming multi-doped junctions on a substrate Nov. 10, 2009
RE39988 Deposition of dopant impurities and pulsed energy drive-in Jan. 1, 2008
7176115 Method of manufacturing Group III nitride substrate and semiconductor device Feb. 13, 2007
6872643 Implant damage removal by laser thermal annealing Mar. 29, 2005
6737340 Method and apparatus for self-doping contacts to a semiconductor May. 18, 2004
6632730 Method for self-doping contacts to a semiconductor Oct. 14, 2003
6521501 Method of forming a CMOS transistor having ultra shallow source and drain regions Feb. 18, 2003
6355544 Selective high concentration doping of semiconductor material utilizing laser annealing Mar. 12, 2002
6329272 Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source Dec. 11, 2001
6313398 Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same Nov. 6, 2001
6194309 Method for forming contact Feb. 27, 2001
6143633 In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon Nov. 7, 2000
6086726 Method of modifying a surface Jul. 11, 2000
5918140 Deposition of dopant impurities and pulsed energy drive-in Jun. 29, 1999
5908307 Fabrication method for reduced-dimension FET devices Jun. 1, 1999
5888843 Method for making light-emitting diode having improved moisture resistance characteristics Mar. 30, 1999
5851850 Method for fabricating a gap type semiconductor substrate of red light emitting devices Dec. 22, 1998
5561079 Stalagraphy Oct. 1, 1996
5399524 Method of providing an ohmic type contact on p-type Zn(S)Se Mar. 21, 1995
5229321 Method of diffusing mercury into a crystalline semiconductor material including mercury Jul. 20, 1993
4746398 Gallium arsenide planar tunnel diode method May. 24, 1988
4684415 Core annihilation method of Hg.sub.1-x Cd.sub.x Te Aug. 4, 1987
4244753 Method for purification of II-VI crystals Jan. 13, 1981
4184897 Droplet migration doping using carrier droplets Jan. 22, 1980
4089713 Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy May. 16, 1978
4081824 Ohmic contact to aluminum-containing compound semiconductors Mar. 28, 1978
4060432 Method for manufacturing nuclear radiation detector with deep diffused junction Nov. 29, 1977
4050966 Method for the preparation of diffused silicon semiconductor components Sep. 27, 1977
3948693 Process for the production of yellow glowing gallium phosphide diodes Apr. 6, 1976

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