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Class Information
Number: 438/547
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > Plural dopants in same region (e.g., through same mask opening, etc.) > Simultaneously
Description: Processes wherein the multiple electrically active impurities are applied at the same time.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8679960 Technique for processing a substrate having a non-planar surface Mar. 25, 2014
8574363 Process for production of silicon single crystal, and highly doped N-type semiconductor substrate Nov. 5, 2013
8461032 Use of dopants with different diffusivities for solar cell manufacture Jun. 11, 2013
8097517 Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS Jan. 17, 2012
8053343 Method for forming selective emitter of solar cell and diffusion apparatus for forming the same Nov. 8, 2011
8017488 Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations Sep. 13, 2011
8013381 Semiconductor device Sep. 6, 2011
7977199 Method for measuring dopant concentration during plasma ion implantation Jul. 12, 2011
7851339 Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer Dec. 14, 2010
7713757 Method for measuring dopant concentration during plasma ion implantation May. 11, 2010
7592228 Recessed clamping diode fabrication in trench devices Sep. 22, 2009
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same Feb. 24, 2009
7479435 Method of forming a circuit having subsurface conductors Jan. 20, 2009
7144795 Method for forming a depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor Dec. 5, 2006
7005364 Method for manufacturing semiconductor device Feb. 28, 2006
6988900 Surface mount connector assembly Jan. 24, 2006
6927137 Forming a retrograde well in a transistor to enhance performance of the transistor Aug. 9, 2005
6825104 Semiconductor device with selectively diffused regions Nov. 30, 2004
6713351 Double diffused field effect transistor having reduced on-resistance Mar. 30, 2004
6551903 Melt through contact formation method Apr. 22, 2003
6537899 Semiconductor device and a method of fabricating the same Mar. 25, 2003
6448161 Silicon based vertical tunneling memory cell Sep. 10, 2002
6410410 Method of forming lightly doped regions in a semiconductor device Jun. 25, 2002
6342418 Semiconductor device and manufacturing method thereof Jan. 29, 2002
6303410 Methods of forming power semiconductor devices having T-shaped gate electrodes Oct. 16, 2001
6297119 Semiconductor device and its manufacture Oct. 2, 2001
6162711 In-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturing Dec. 19, 2000
6153516 Method of fabricating a modified polysilicon plug structure Nov. 28, 2000
6110276 Method for making n-type semiconductor diamond Aug. 29, 2000
6080614 Method of making a MOS-gated semiconductor device with a single diffusion Jun. 27, 2000
5710059 Method for producing a semiconductor device having a semiconductor layer of SiC by implanting Jan. 20, 1998
5670394 Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source Sep. 23, 1997
5650347 Method of manufacturing a lightly doped drain MOS transistor Jul. 22, 1997
5504016 Method of manufacturing semiconductor device structures utilizing predictive dopant-dopant interactions Apr. 2, 1996
5340752 Method for forming a bipolar transistor using doped SOG Aug. 23, 1994
5324686 Method of manufacturing semiconductor device using hydrogen as a diffusion controlling substance Jun. 28, 1994
5086005 Bipolar transistor and method for manufacturing the same Feb. 4, 1992
5081050 Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities Jan. 14, 1992
5063168 Process for making bipolar transistor with polysilicon stringer base contact Nov. 5, 1991
4997774 Method for fabricating a DRAM cell Mar. 5, 1991
4939103 Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate Jul. 3, 1990
4830983 Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof May. 16, 1989
4820656 Method for producing a p-doped semiconductor region in an n-conductive semiconductor body Apr. 11, 1989
4778772 Method of manufacturing a bipolar transistor Oct. 18, 1988
4629520 Method of forming shallow n-type region with arsenic or antimony and phosphorus Dec. 16, 1986
4609414 Emitter finger structure in a switching transistor Sep. 2, 1986
4597824 Method of producing semiconductor device Jul. 1, 1986
4589936 Method for fabricating a semiconductor device by co-diffusion of arsenic and phosphorus May. 20, 1986
4344980 Superior ohmic contacts to III-V semiconductor by virtue of double donor impurity Aug. 17, 1982
4338481 Very thin silicon wafer base solar cell Jul. 6, 1982

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