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Class Information
Number: 438/544
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > To solid-state solubility concentration
Description: Processes involving the introduction by diffusion at a concentration level up to the limit at which precipitation out of solid solution begins to occur for the particular electrically active impurity in the semiconductive material.










Patents under this class:

Patent Number Title Of Patent Date Issued
8450130 Method of manufacturing a semiconductor laser May. 28, 2013
8377806 Method for controlled growth of silicon carbide and structures produced by same Feb. 19, 2013
8293630 Material and method of fabrication therefor Oct. 23, 2012
7915062 Method of manufacturing a TFT array substrate Mar. 29, 2011
7897471 Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices Mar. 1, 2011
7297617 Method for controlling diffusion in semiconductor regions Nov. 20, 2007
7094671 Transistor with shallow germanium implantation region in channel Aug. 22, 2006
6988900 Surface mount connector assembly Jan. 24, 2006
6936527 Low voltage non-volatile memory cell Aug. 30, 2005
6617228 Semiconductor material and method for enhancing solubility of a dopant therein Sep. 9, 2003
6498078 Method for enhancing the solubility of boron and indium in silicon Dec. 24, 2002
5532185 Impurity doping method with adsorbed diffusion source Jul. 2, 1996
5413943 Semiconductor device and method of manufacturing the same May. 9, 1995
4904618 Process for doping crystals of wide band gap semiconductors Feb. 27, 1990
4717678 Method of forming self-aligned P contact Jan. 5, 1988
4472212 Method for fabricating a semiconductor device Sep. 18, 1984
4201603 Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon May. 6, 1980











 
 
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