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Class Information
Number: 438/543
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > To control carrier lifetime (i.e., deep level dopant)
Description: Processes involving the introduction by diffusion of an impurity serving to form energy levels in the forbidden band of a semiconductor material that can act as traps for charge carriers (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8652937 Methods of fabricating back-illuminated imaging sensors Feb. 18, 2014
8557693 Contact resistivity reduction in transistor devices by deep level impurity formation Oct. 15, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8415239 Method for manufacturing a power semiconductor device Apr. 9, 2013
8189634 Method of manufacturing a laser gain medium having a spatially variable gain profile May. 29, 2012
8076778 Method for preventing Al-Cu bottom damage using TiN liner Dec. 13, 2011
8034700 Method of fabricating a diode Oct. 11, 2011
7851339 Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer Dec. 14, 2010
7803717 Growth and integration of epitaxial gallium nitride films with silicon-based devices Sep. 28, 2010
7772100 Method of manufacturing a semiconductor device having a buried doped region Aug. 10, 2010
6936527 Low voltage non-volatile memory cell Aug. 30, 2005
6927141 Process for forming fast recovery diode with a single large area P/N junction Aug. 9, 2005
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6815319 Damascene resistor and method for measuring the width of same Nov. 9, 2004
6770519 Semiconductor manufacturing method using two-stage annealing Aug. 3, 2004
6695903 Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors Feb. 24, 2004
6495891 Transistor having impurity concentration distribution capable of improving short channel effect Dec. 17, 2002
6475876 Process for fabricating a semiconductor component Nov. 5, 2002
6469368 Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method Oct. 22, 2002
6459141 Method and apparatus for suppressing the channeling effect in high energy deep well implantation Oct. 1, 2002
6358825 Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control Mar. 19, 2002
6248627 Method for protecting gate edges from charge gain/loss in semiconductor device Jun. 19, 2001
6159830 Process for adjusting the carrier lifetime in a semiconductor component Dec. 12, 2000
6143632 Deuterium doping for hot carrier reliability improvement Nov. 7, 2000
6043112 IGBT with reduced forward voltage drop and reduced switching loss Mar. 28, 2000
5966627 In-situ doped silicon layers Oct. 12, 1999
5856231 Process for producing high-resistance silicon carbide Jan. 5, 1999
5747371 Method of manufacturing vertical MOSFET May. 5, 1998
5371040 Method for manufacturing semiconductor components with short switching time Dec. 6, 1994
5300453 Method for producing semiconductor device Apr. 5, 1994
5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions Feb. 1, 1994
5032540 A Process for modulating the quantity of gold diffused into a silicon substrate Jul. 16, 1991
4963509 Gold diffusion method for semiconductor devices of high switching speed Oct. 16, 1990
4960731 Method of making a power diode with high reverse voltage rating Oct. 2, 1990
4935386 Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating Jun. 19, 1990
4925812 Platinum diffusion process May. 15, 1990
4613381 Method for fabricating a thyristor Sep. 23, 1986
4609414 Emitter finger structure in a switching transistor Sep. 2, 1986
4510672 Process for making stacked high voltage rectifiers Apr. 16, 1985
4376138 Optical waveguides in InGaAsP and InP Mar. 8, 1983
4370180 Method for manufacturing power switching devices Jan. 25, 1983
4329774 Silicon resistor having a very low temperature coefficient May. 18, 1982
4290188 Process for producing bipolar semiconductor device utilizing predeposition of dopant and a polycrystalline silicon-gold film followed by simultaneous diffusion Sep. 22, 1981
4190458 Metal-silica solution for forming films on semiconductor surfaces Feb. 26, 1980
4148672 Glass passivated gold diffused rectifier pellet and method for making Apr. 10, 1979
4140560 Process for manufacture of fast recovery diodes Feb. 20, 1979
4126713 Forming films on semiconductor surfaces with metal-silica solution Nov. 21, 1978
4085500 Ohmic contacts to p-type mercury cadmium telluride Apr. 25, 1978
4077819 Technique for passivating semiconductor devices Mar. 7, 1978

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