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Class Information
Number: 438/541
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Fusing dopant with substrate (i.e., alloy junction) > Including plural controlled heating or cooling steps or nonuniform heating > Including diffusion after fusing step
Description: Processes including a step of solid-state diffusion subsequent to the alloying operation.










Patents under this class:

Patent Number Title Of Patent Date Issued
8603901 Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same Dec. 10, 2013
8557692 FinFET LDD and source drain implant technique Oct. 15, 2013
7727868 Apparatus and method for controlling diffusion Jun. 1, 2010
7358168 Ion implantation method for forming a shallow junction Apr. 15, 2008
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7082346 Semiconductor manufacturing apparatus and semiconductor device manufacturing method Jul. 25, 2006
6830995 Method of diffusing zinc into article and method of heating article Dec. 14, 2004
6815229 In situ monitoring of sheet resistivity of silicides during rapid thermal annealing using electrical methods Nov. 9, 2004
6723541 Method of producing semiconductor device and semiconductor substrate Apr. 20, 2004
6559039 Doped silicon deposition process in resistively heated single wafer chamber May. 6, 2003
6500741 Method for making high voltage device Dec. 31, 2002
6479885 High voltage device and method Nov. 12, 2002
6376346 High voltage device and method for making the same Apr. 23, 2002
6251800 Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performance Jun. 26, 2001
6220091 Liquid level pressure sensor and method Apr. 24, 2001
6156122 Depositor for depositing a dielectric layer with fewer metallic impurities and a method for reducing the content of the metallic impurities in the dielectric layer by using this depositor Dec. 5, 2000
5994209 Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films Nov. 30, 1999
5516724 Oxidizing methods for making low resistance source/drain germanium contacts May. 14, 1996
4609414 Emitter finger structure in a switching transistor Sep. 2, 1986
4558507 Method of manufacturing semiconductor device Dec. 17, 1985
4154632 Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device May. 15, 1979
4104786 Method of manufacture of a semiconductor device Aug. 8, 1978
4021269 Post diffusion after temperature gradient zone melting May. 3, 1977
3988766 Multiple P-N junction formation with an alloy droplet Oct. 26, 1976
3972741 Multiple p-n junction formation with an alloy droplet Aug. 3, 1976
3956024 Process for making a semiconductor varistor embodying a lamellar structure May. 11, 1976











 
 
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