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Class Information
Number: 438/538
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Fusing dopant with substrate (i.e., alloy junction) > Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)
Description: Processes including the incorporation of an agent to alter the melting and crystallization of the alloying operation.










Patents under this class:

Patent Number Title Of Patent Date Issued
8679929 On current in one-time-programmable memory cells Mar. 25, 2014
8026556 Adjustible resistor for use in a resistive divider circuit and method for manufacturing Sep. 27, 2011
7998842 Atomic layer deposition metallic contacts, gates and diffusion barriers Aug. 16, 2011
7670884 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device Mar. 2, 2010
7538024 Method of fabricating a dual-damascene copper structure May. 26, 2009
7470604 Method for manufacturing display device Dec. 30, 2008
7329604 Semiconductor device and method for fabricating the same Feb. 12, 2008
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7189623 Semiconductor processing method and field effect transistor Mar. 13, 2007
7176115 Method of manufacturing Group III nitride substrate and semiconductor device Feb. 13, 2007
6943097 Atomic layer deposition of metallic contacts, gates and diffusion barriers Sep. 13, 2005
6846730 Two stage etching of silicon nitride to form a nitride spacer Jan. 25, 2005
6737340 Method and apparatus for self-doping contacts to a semiconductor May. 18, 2004
6632728 Increasing the electrical activation of ion-implanted dopants Oct. 14, 2003
6632730 Method for self-doping contacts to a semiconductor Oct. 14, 2003
6362083 Method for fabricating locally reinforced metallic microfeature Mar. 26, 2002
5356837 Method of making epitaxial cobalt silicide using a thin metal underlayer Oct. 18, 1994
4184897 Droplet migration doping using carrier droplets Jan. 22, 1980
4178192 Promotion of surface film stability during initiation of thermal migration Dec. 11, 1979
4089713 Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy May. 16, 1978
4076559 Temperature gradient zone melting through an oxide layer Feb. 28, 1978











 
 
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