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Class Information
Number: 438/537
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Fusing dopant with substrate (i.e., alloy junction)
Description: Processes for incorporating an electrically active impurity into a semiconductor material during an operation affecting the partial melting of the substrate.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 7262119 |
Method for incorporating germanium into a semiconductor wafer |
Aug. 28, 2007 |
| 7189623 |
Semiconductor processing method and field effect transistor |
Mar. 13, 2007 |
| 7109098 |
Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
Sep. 19, 2006 |
| 7060547 |
Method for forming a junction region of a semiconductor device |
Jun. 13, 2006 |
| 7012008 |
Dual spacer process for non-volatile memory devices |
Mar. 14, 2006 |
| 6872644 |
Semiconductor device with non-compounded contacts, and method of making |
Mar. 29, 2005 |
| 6784018 |
Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
Aug. 31, 2004 |
| 6709959 |
Semiconductor device having a shallow junction and a fabrication process thereof |
Mar. 23, 2004 |
| 6703295 |
Method and apparatus for self-doping contacts to a semiconductor |
Mar. 9, 2004 |
| 6531379 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
Mar. 11, 2003 |
| 6507626 |
Bandpass phase tracker that automatically samples at prescribed carrier phases when digitizing VSB I-F signal |
Jan. 14, 2003 |
| 6500741 |
Method for making high voltage device |
Dec. 31, 2002 |
| 6479885 |
High voltage device and method |
Nov. 12, 2002 |
| 6376346 |
High voltage device and method for making the same |
Apr. 23, 2002 |
| 6287881 |
Semiconductor device with low parasitic capacitance |
Sep. 11, 2001 |
| 5589408 |
Method of forming an alloyed drain field effect transistor and device formed |
Dec. 31, 1996 |
| 5561079 |
Stalagraphy |
Oct. 1, 1996 |
| 4703553 |
Drive through doping process for manufacturing low back surface recombination solar cells |
Nov. 3, 1987 |
| 4436557 |
Modified laser-annealing process for improving the quality of electrical P-N junctions and devices |
Mar. 13, 1984 |
| 4392010 |
Photovoltaic cells having contacts and method of applying same |
Jul. 5, 1983 |
| 4389256 |
Method of manufacturing pn junction in group II-VI compound semiconductor |
Jun. 21, 1983 |
| 4349691 |
Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion |
Sep. 14, 1982 |
| 4301188 |
Process for producing contact to GaAs active region |
Nov. 17, 1981 |
| 4297391 |
Method of applying electrical contacts to a photovoltaic cell |
Oct. 27, 1981 |
| 4297149 |
Method of treating SiPOS passivated high voltage semiconductor device |
Oct. 27, 1981 |
| 4293587 |
Low resistance backside preparation for semiconductor integrated circuit chips |
Oct. 6, 1981 |
| 4246693 |
Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum |
Jan. 27, 1981 |
| 4226017 |
Method for making a semiconductor device |
Oct. 7, 1980 |
| 4128897 |
Archival memory media and method for information recording thereon |
Dec. 5, 1978 |
| 4126496 |
Method of making a single chip temperature compensated reference diode |
Nov. 21, 1978 |
| 4081794 |
Alloy junction archival memory plane and methods for writing data thereon |
Mar. 28, 1978 |
| 4066485 |
Method of fabricating a semiconductor device |
Jan. 3, 1978 |
| 4056879 |
Method of forming silicon solar energy cell having improved back contact |
Nov. 8, 1977 |
| 3975756 |
Gadolinium doped germanium |
Aug. 17, 1976 |
| 3965279 |
Ohmic contacts for group III-V n-type semiconductors |
Jun. 22, 1976 |
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