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Class Information
Number: 438/536
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.) > Recoil implantation
Description: Process involving the use of kinetic energy via the use of applied corpuscular or electromagnetic radiation for introduction of an electrically active dopant species to a semiconductive region of the substrate whereby at least a portion of the kinetic energy travels in other than a straight path (e.g., bounces back and forth).










Patents under this class:

Patent Number Title Of Patent Date Issued
8497194 Methods of forming doped regions in semiconductor substrates Jul. 30, 2013
8329567 Methods of forming doped regions in semiconductor substrates Dec. 11, 2012
8108159 Method of detecting degradation of semiconductor devices and method of detecting degradation of integrated circuits Jan. 31, 2012
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7189623 Semiconductor processing method and field effect transistor Mar. 13, 2007
7042066 Dual-trench isolated crosspoint memory array May. 9, 2006
6083780 Semiconductor device and method of fabrication thereof Jul. 4, 2000
5672541 Ultra-shallow junction semiconductor device fabrication Sep. 30, 1997
4904611 Formation of large grain polycrystalline films Feb. 27, 1990
4764478 Method of manufacturing MOS transistor by dual species implantation and rapid annealing Aug. 16, 1988
4570324 Stable ohmic contacts for gallium arsenide semiconductors Feb. 18, 1986
4494997 Ion implant mask and cap for gallium arsenide structures Jan. 22, 1985
4452644 Process for doping semiconductors Jun. 5, 1984
4368083 Process for doping semiconductors Jan. 11, 1983











 
 
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