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Class Information
Number: 438/533
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > And contact formation (i.e., metallization)
Description: Process including a step of forming an electrical contact to a semiconductor region of the substrate.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7402864 |
Method for forming a DRAM semiconductor device with a sense amplifier |
Jul. 22, 2008 |
| 7375019 |
Image sensor and method for fabricating the same |
May. 20, 2008 |
| 7341931 |
Methods of forming low resistivity contact for an integrated circuit device |
Mar. 11, 2008 |
| 7326606 |
Semiconductor processing methods |
Feb. 5, 2008 |
| 7307008 |
Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole |
Dec. 11, 2007 |
| 7271103 |
Surface treated low-k dielectric as diffusion barrier for copper metallization |
Sep. 18, 2007 |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 7265039 |
Method for fabricating semiconductor device with improved refresh time |
Sep. 4, 2007 |
| 7241705 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects |
Jul. 10, 2007 |
| 7214594 |
Method of making semiconductor device using a novel interconnect cladding layer |
May. 8, 2007 |
| 7172933 |
Recessed polysilicon gate structure for a strained silicon MOSFET device |
Feb. 6, 2007 |
| 7064048 |
Method of forming a semi-insulating region |
Jun. 20, 2006 |
| 6984574 |
Cobalt silicide fabrication using protective titanium |
Jan. 10, 2006 |
| 6979633 |
Method of manufacturing semiconductor device |
Dec. 27, 2005 |
| 6977204 |
Method for forming contact plug having double doping distribution in semiconductor device |
Dec. 20, 2005 |
| 6927152 |
Method for fabricating semiconductor device |
Aug. 9, 2005 |
| 6927141 |
Process for forming fast recovery diode with a single large area P/N junction |
Aug. 9, 2005 |
| 6911382 |
Method of forming a contact in a semiconductor device utilizing a plasma treatment |
Jun. 28, 2005 |
| 6841477 |
Metal interconnection, semiconductor device, method for forming metal interconnection and method for fabricating semiconductor device |
Jan. 11, 2005 |
| 6838362 |
Process for manufacturing a through insulated interconnection in a body of semiconductor material |
Jan. 4, 2005 |
| 6815318 |
Manufacturing method of semiconductor device |
Nov. 9, 2004 |
| 6815300 |
Method for manufacturing semiconductor device having increased effective channel length |
Nov. 9, 2004 |
| 6808975 |
Method for forming a self-aligned contact hole in a semiconductor device |
Oct. 26, 2004 |
| 6806172 |
Physical vapor deposition of nickel |
Oct. 19, 2004 |
| 6787436 |
Silicide-silicon contacts for reduction of MOSFET source-drain resistances |
Sep. 7, 2004 |
| 6764929 |
Method and system for providing a contact hole in a semiconductor device |
Jul. 20, 2004 |
| 6737340 |
Method and apparatus for self-doping contacts to a semiconductor |
May. 18, 2004 |
| 6709959 |
Semiconductor device having a shallow junction and a fabrication process thereof |
Mar. 23, 2004 |
| 6645820 |
Polycrystalline silicon diode string for ESD protection of different power supply connections |
Nov. 11, 2003 |
| 6642119 |
Silicide MOSFET architecture and method of manufacture |
Nov. 4, 2003 |
| 6635558 |
Semiconductor processing methods of forming a contact opening to a conductive line and methods of forming substrate active area source/drain regions |
Oct. 21, 2003 |
| 6632730 |
Method for self-doping contacts to a semiconductor |
Oct. 14, 2003 |
| 6613623 |
High fMAX deep submicron MOSFET |
Sep. 2, 2003 |
| 6579778 |
Source bus formation for a flash memory using silicide |
Jun. 17, 2003 |
| 6569721 |
Method of manufacturing a thin film transistor to reduce contact resistance between a drain region and an interconnecting metal line |
May. 27, 2003 |
| 6555450 |
Contact forming method for semiconductor device |
Apr. 29, 2003 |
| 6555474 |
Method of forming a protective layer included in metal filled semiconductor features |
Apr. 29, 2003 |
| 6551923 |
Dual width contact for charge gain reduction |
Apr. 22, 2003 |
| 6548876 |
Semiconductor device of sub-micron or high voltage CMOS structure and method for manufacturing the same |
Apr. 15, 2003 |
| 6541319 |
Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes |
Apr. 1, 2003 |
| 6541358 |
Method of fabricating a semiconductor device by filling gaps between gate electrodes with HSQ |
Apr. 1, 2003 |
| 6531379 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
Mar. 11, 2003 |
| 6486062 |
Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate |
Nov. 26, 2002 |
| 6482737 |
Fabrication method of implanting silicon-ions into the silicon substrate |
Nov. 19, 2002 |
| 6440828 |
Process of fabricating semiconductor device having low-resistive contact without high temperature heat treatment |
Aug. 27, 2002 |
| 6423589 |
Methods for fabricating CMOS integrated circuits including source/drain compensating regions |
Jul. 23, 2002 |
| 6410430 |
Enhanced ultra-shallow junctions in CMOS using high temperature silicide process |
Jun. 25, 2002 |
| 6395623 |
Semiconductor processing methods of forming a contact opening to a conductive line and methods of forming substrate active area source/drain regions |
May. 28, 2002 |
| 6387803 |
Method for forming a silicide region on a silicon body |
May. 14, 2002 |
| 6376344 |
Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device |
Apr. 23, 2002 |
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