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Class Information
Number: 438/528
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Including multiple implantation steps > Providing nondopant ion (e.g., proton, etc.)
Description: Process wherein a nonelectrically active impurity species is implanted into a semiconductor region of the substrate in conjunction with the prior, simultaneous, or subsequent implantation of an electrically active dopant species.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6806151 Methods and apparatus for inducing stress in a semiconductor device Oct. 19, 2004
6787436 Silicide-silicon contacts for reduction of MOSFET source-drain resistances Sep. 7, 2004
6784072 Control of buried oxide in SIMOX Aug. 31, 2004
6770500 Process of passivating a metal-gated complementary metal oxide semiconductor Aug. 3, 2004
6764930 Method and structure for modular, highly linear MOS capacitors using nitrogen implantation Jul. 20, 2004
6762097 Semiconductor device and method for manufacturing the same Jul. 13, 2004
6759277 Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates Jul. 6, 2004
6756257 Patterned SOI regions on semiconductor chips Jun. 29, 2004
6740570 Method for forming a self-aligned silicide of a metal oxide semiconductor May. 25, 2004
6720241 Method for manufacturing semiconductor device Apr. 13, 2004
6703277 Reducing agent for high-K gate dielectric parasitic interfacial layer Mar. 9, 2004
6699771 Process for optimizing junctions formed by solid phase epitaxy Mar. 2, 2004
6696341 Method of manufacturing a semiconductor device having electrostatic discharge protection element Feb. 24, 2004
6680243 Shallow junction formation Jan. 20, 2004
6670250 MOS transistor and method for forming the same Dec. 30, 2003
6664172 Method of forming a MOS transistor with improved threshold voltage stability Dec. 16, 2003
6664153 Method to fabricate a single gate with dual work-functions Dec. 16, 2003
6660569 Method for producing a power semiconductor device with a stop zone Dec. 9, 2003
6656815 Process for implanting a deep subcollector with self-aligned photo registration marks Dec. 2, 2003
6653658 Semiconductor wafers with integrated heat spreading layer Nov. 25, 2003
6653192 Method of manufacturing semiconductor devices using nitrification Nov. 25, 2003
6638832 Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices Oct. 28, 2003
6632728 Increasing the electrical activation of ion-implanted dopants Oct. 14, 2003
6632724 Controlled cleaving process Oct. 14, 2003
6630385 MOSFET with differential halo implant and annealing strategy Oct. 7, 2003
6602751 Method for manufacturing semiconductor devices Aug. 5, 2003
6599810 Shallow trench isolation formation with ion implantation Jul. 29, 2003
6596593 Method of manufacturing semiconductor device employing oxygen implantation Jul. 22, 2003
6593205 Patterned SOI by formation and annihilation of buried oxide regions during processing Jul. 15, 2003
6586295 Semiconductor device manufacturing method and semiconductor device Jul. 1, 2003
6583000 Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation Jun. 24, 2003
6583060 Dual depth trench isolation Jun. 24, 2003
6583070 Semiconductor device having a low dielectric constant material Jun. 24, 2003
6566212 Method of fabricating an integrated circuit with ultra-shallow source/drain extensions May. 20, 2003
6559018 Silicon implant in a salicided cobalt layer to reduce cobalt-silicon agglomeration May. 6, 2003
6555439 Partial recrystallization of source/drain region before laser thermal annealing Apr. 29, 2003
6544853 Reduction of negative bias temperature instability using fluorine implantation Apr. 8, 2003
6534371 C implants for improved SiGe bipolar yield Mar. 18, 2003
6534354 Method of manufacturing MOS transistor with fluorine implantation at a low energy Mar. 18, 2003
6531410 Intrinsic dual gate oxide MOSFET using a damascene gate process Mar. 11, 2003
6524928 Semiconductor device and method for manufacturing the same Feb. 25, 2003
6521501 Method of forming a CMOS transistor having ultra shallow source and drain regions Feb. 18, 2003
6521502 Solid phase epitaxy activation process for source/drain junction extensions and halo regions Feb. 18, 2003
6518150 Method of manufacturing semiconductor device Feb. 11, 2003
6514829 Method of fabricating abrupt source/drain junctions Feb. 4, 2003
6506654 Source-side stacking fault body-tie for partially-depleted SOI MOSFET hysteresis control Jan. 14, 2003
6503801 Non-uniform channel profile via enhanced diffusion Jan. 7, 2003
6500739 Formation of an indium retrograde profile via antimony ion implantation to improve NMOS short channel effect Dec. 31, 2002
6498077 Semiconductor device and method of manufacturing same Dec. 24, 2002
6482681 Hydrogen implant for buffer zone of punch-through non epi IGBT Nov. 19, 2002

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