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Class Information
Number: 438/528
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Including multiple implantation steps > Providing nondopant ion (e.g., proton, etc.)
Description: Process wherein a nonelectrically active impurity species is implanted into a semiconductor region of the substrate in conjunction with the prior, simultaneous, or subsequent implantation of an electrically active dopant species.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710378 Portable, single member housing cord protector Apr. 29, 2014
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8704229 Partial poly amorphization for channeling prevention Apr. 22, 2014
8679961 Method of manufacturing semiconductor device having pre-silicide nitrogen implant Mar. 25, 2014
8673754 Method of forming gate dielectric layer and method of fabricating semiconductor device Mar. 18, 2014
8664073 Method for fabricating field-effect transistor Mar. 4, 2014
8664056 Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphization Mar. 4, 2014
8658522 Methods and apparatus for incorporating nitrogen in oxide films Feb. 25, 2014
8654537 Printed circuit board with integral radio-frequency shields Feb. 18, 2014
8598024 Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method Dec. 3, 2013
8551845 Structure and method for increasing strain in a device Oct. 8, 2013
8541275 Single metal gate CMOS integration by intermixing polarity specific capping layers Sep. 24, 2013
8530343 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Sep. 10, 2013
8501570 Method of manufacturing source/drain structures Aug. 6, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8486814 Wafer backside defectivity clean-up utilizing selective removal of substrate material Jul. 16, 2013
8470687 Strained semiconductor by full wafer bonding Jun. 25, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8470700 Semiconductor device with reduced contact resistance and method of manufacturing thereof Jun. 25, 2013
8404546 Source/drain carbon implant and RTA anneal, pre-SiGe deposition Mar. 26, 2013
8389370 Radiation-tolerant integrated circuit device and method for fabricating Mar. 5, 2013
8389385 Semiconductor material manufacture Mar. 5, 2013
8349732 Implanted metal silicide for semiconductor device Jan. 8, 2013
8343862 Semiconductor device with a field stop zone and process of producing the same Jan. 1, 2013
8329557 Techniques for forming thin films by implantation with reduced channeling Dec. 11, 2012
8293619 Layer transfer of films utilizing controlled propagation Oct. 23, 2012
8288257 Doping profile modification in P3I process Oct. 16, 2012
8288250 Method for transferring chips onto a substrate Oct. 16, 2012
8263483 Method including producing a monocrystalline layer Sep. 11, 2012
8258546 High-k metal gate device Sep. 4, 2012
8242026 Semiconductor device manufacturing method, semiconductor manufacturing apparatus and storage medium Aug. 14, 2012
8236675 Semiconductor device and method of fabricating a semiconductor device Aug. 7, 2012
8227289 Method for producing single crystal silicon solar cell and single crystal silicon solar cell Jul. 24, 2012
8227290 Method for producing single crystal silicon solar cell and single crystal silicon solar cell Jul. 24, 2012
8222128 Method for introducing impurities and apparatus for introducing impurities Jul. 17, 2012
8216368 Method of fabricating an epitaxially grown layer Jul. 10, 2012
8198163 Method of fabricating semiconductor device Jun. 12, 2012
8153513 Method and system for continuous large-area scanning implantation process Apr. 10, 2012
8133804 Method and system for modifying patterned photoresist using multi-step ion implantation Mar. 13, 2012
8124511 Method of manufacturing a semiconductor device having reduced N/P or P/N junction crystal disorder Feb. 28, 2012
8124509 Method of forming porous diamond films for semiconductor applications Feb. 28, 2012
8114748 Shallow extension regions having abrupt extension junctions Feb. 14, 2012
8101503 Method of producing a thin layer of semiconductor material Jan. 24, 2012
8097529 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Jan. 17, 2012
8080454 Method of fabricating CMOS transistor Dec. 20, 2011
8058157 FinFET structure with multiply stressed gate electrode Nov. 15, 2011
8039330 Method for manufacturing semiconductor device Oct. 18, 2011
8030118 Method for producing single crystal silicon solar cell and single crystal silicon solar cell Oct. 4, 2011
8021910 Method for producing single crystal silicon solar cell and single crystal silicon solar cell Sep. 20, 2011
8012852 Controlled process and resulting device Sep. 6, 2011

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