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Class Information
Number: 438/523
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor > And contact formation (i.e., metallization)
Description: Process including a step of making an electrical contact to a compound semiconductor region of the substrate.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8669153 |
Integrating a first contact structure in a gate last process |
Mar. 11, 2014 |
| 8642464 |
Method of manufacturing semiconductor device |
Feb. 4, 2014 |
| 8507375 |
Alignment tolerant semiconductor contact and method |
Aug. 13, 2013 |
| 8476154 |
Method of making a charge trapping non-volatile semiconductor memory device |
Jul. 2, 2013 |
| 8394692 |
Integrating a first contact structure in a gate last process |
Mar. 12, 2013 |
| 8361834 |
Methods of forming a low resistance silicon-metal contact |
Jan. 29, 2013 |
| 8319264 |
Semiconductor device and method for manufacturing the same |
Nov. 27, 2012 |
| 8216928 |
Methods for fabricating semiconductor devices having local contacts |
Jul. 10, 2012 |
| 8143114 |
System and method for source/drain contact processing |
Mar. 27, 2012 |
| 8093120 |
Integrating a first contact structure in a gate last process |
Jan. 10, 2012 |
| 8084293 |
Continuously optimized solar cell metallization design through feed-forward process |
Dec. 27, 2011 |
| 8008179 |
Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers |
Aug. 30, 2011 |
| 8008180 |
Method of forming an OHMIC contact on a P-type 4H-SIC substrate |
Aug. 30, 2011 |
| 7939439 |
Semiconductor device and fabricating method thereof |
May. 10, 2011 |
| 7863083 |
High temperature processing compatible metal gate electrode for pFETS and methods for fabrication |
Jan. 4, 2011 |
| 7772110 |
Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing |
Aug. 10, 2010 |
| 7704866 |
Methods for forming composite nanoparticle-metal metallization contacts on a substrate |
Apr. 27, 2010 |
| 7678642 |
Method for manufacturing phase change memory device using a patterning process |
Mar. 16, 2010 |
| 7632736 |
Self-aligned contact formation utilizing sacrificial polysilicon |
Dec. 15, 2009 |
| 7615401 |
Methods of fabricating multi-layer phase-changeable memory devices |
Nov. 10, 2009 |
| 7601604 |
Method for fabricating conducting plates for a high-Q MIM capacitor |
Oct. 13, 2009 |
| 7601634 |
Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor |
Oct. 13, 2009 |
| 7341931 |
Methods of forming low resistivity contact for an integrated circuit device |
Mar. 11, 2008 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 7244660 |
Method for manufacturing a semiconductor component |
Jul. 17, 2007 |
| 7241705 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects |
Jul. 10, 2007 |
| 7214594 |
Method of making semiconductor device using a novel interconnect cladding layer |
May. 8, 2007 |
| 7172933 |
Recessed polysilicon gate structure for a strained silicon MOSFET device |
Feb. 6, 2007 |
| 6979611 |
Method for fabricating semiconductor device |
Dec. 27, 2005 |
| 6977204 |
Method for forming contact plug having double doping distribution in semiconductor device |
Dec. 20, 2005 |
| 6902992 |
Method of fabricating semiconductor device having semiconductor resistance element |
Jun. 7, 2005 |
| 6867115 |
Compound semiconductor device |
Mar. 15, 2005 |
| 6864580 |
Semiconductor device and method of manufacturing the same |
Mar. 8, 2005 |
| 6787436 |
Silicide-silicon contacts for reduction of MOSFET source-drain resistances |
Sep. 7, 2004 |
| 6762084 |
Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor |
Jul. 13, 2004 |
| 6759267 |
Method for forming a phase change memory |
Jul. 6, 2004 |
| 6656822 |
Method for reduced capacitance interconnect system using gaseous implants into the ILD |
Dec. 2, 2003 |
| 6562652 |
Edge formation process with anodizing for aluminum solid electrolytic capacitor |
May. 13, 2003 |
| 6551923 |
Dual width contact for charge gain reduction |
Apr. 22, 2003 |
| 6548324 |
Edge formation process without anodizing for aluminum solid electrolytic capacitor |
Apr. 15, 2003 |
| 6528405 |
Enhancement mode RF device and fabrication method |
Mar. 4, 2003 |
| 6521508 |
Method of manufacturing a contact plug in a semiconductor device using selective epitaxial growth of silicon process |
Feb. 18, 2003 |
| 6503817 |
Method for establishing dopant profile to suppress silicidation retardation effect in CMOS process |
Jan. 7, 2003 |
| 6482737 |
Fabrication method of implanting silicon-ions into the silicon substrate |
Nov. 19, 2002 |
| 6365494 |
Method for producing an ohmic contact |
Apr. 2, 2002 |
| 6362082 |
Methodology for control of short channel effects in MOS transistors |
Mar. 26, 2002 |
| 6346454 |
Method of making dual damascene interconnect structure and metal electrode capacitor |
Feb. 12, 2002 |
| 6319784 |
Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously |
Nov. 20, 2001 |
| 6316311 |
Method of forming borderless contact |
Nov. 13, 2001 |
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