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Class Information
Number: 438/523
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor > And contact formation (i.e., metallization)
Description: Process including a step of making an electrical contact to a compound semiconductor region of the substrate.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8669153 Integrating a first contact structure in a gate last process Mar. 11, 2014
8642464 Method of manufacturing semiconductor device Feb. 4, 2014
8507375 Alignment tolerant semiconductor contact and method Aug. 13, 2013
8476154 Method of making a charge trapping non-volatile semiconductor memory device Jul. 2, 2013
8394692 Integrating a first contact structure in a gate last process Mar. 12, 2013
8361834 Methods of forming a low resistance silicon-metal contact Jan. 29, 2013
8319264 Semiconductor device and method for manufacturing the same Nov. 27, 2012
8216928 Methods for fabricating semiconductor devices having local contacts Jul. 10, 2012
8143114 System and method for source/drain contact processing Mar. 27, 2012
8093120 Integrating a first contact structure in a gate last process Jan. 10, 2012
8084293 Continuously optimized solar cell metallization design through feed-forward process Dec. 27, 2011
8008179 Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers Aug. 30, 2011
8008180 Method of forming an OHMIC contact on a P-type 4H-SIC substrate Aug. 30, 2011
7939439 Semiconductor device and fabricating method thereof May. 10, 2011
7863083 High temperature processing compatible metal gate electrode for pFETS and methods for fabrication Jan. 4, 2011
7772110 Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing Aug. 10, 2010
7704866 Methods for forming composite nanoparticle-metal metallization contacts on a substrate Apr. 27, 2010
7678642 Method for manufacturing phase change memory device using a patterning process Mar. 16, 2010
7632736 Self-aligned contact formation utilizing sacrificial polysilicon Dec. 15, 2009
7615401 Methods of fabricating multi-layer phase-changeable memory devices Nov. 10, 2009
7601604 Method for fabricating conducting plates for a high-Q MIM capacitor Oct. 13, 2009
7601634 Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor Oct. 13, 2009
7341931 Methods of forming low resistivity contact for an integrated circuit device Mar. 11, 2008
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7244660 Method for manufacturing a semiconductor component Jul. 17, 2007
7241705 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects Jul. 10, 2007
7214594 Method of making semiconductor device using a novel interconnect cladding layer May. 8, 2007
7172933 Recessed polysilicon gate structure for a strained silicon MOSFET device Feb. 6, 2007
6979611 Method for fabricating semiconductor device Dec. 27, 2005
6977204 Method for forming contact plug having double doping distribution in semiconductor device Dec. 20, 2005
6902992 Method of fabricating semiconductor device having semiconductor resistance element Jun. 7, 2005
6867115 Compound semiconductor device Mar. 15, 2005
6864580 Semiconductor device and method of manufacturing the same Mar. 8, 2005
6787436 Silicide-silicon contacts for reduction of MOSFET source-drain resistances Sep. 7, 2004
6762084 Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor Jul. 13, 2004
6759267 Method for forming a phase change memory Jul. 6, 2004
6656822 Method for reduced capacitance interconnect system using gaseous implants into the ILD Dec. 2, 2003
6562652 Edge formation process with anodizing for aluminum solid electrolytic capacitor May. 13, 2003
6551923 Dual width contact for charge gain reduction Apr. 22, 2003
6548324 Edge formation process without anodizing for aluminum solid electrolytic capacitor Apr. 15, 2003
6528405 Enhancement mode RF device and fabrication method Mar. 4, 2003
6521508 Method of manufacturing a contact plug in a semiconductor device using selective epitaxial growth of silicon process Feb. 18, 2003
6503817 Method for establishing dopant profile to suppress silicidation retardation effect in CMOS process Jan. 7, 2003
6482737 Fabrication method of implanting silicon-ions into the silicon substrate Nov. 19, 2002
6365494 Method for producing an ohmic contact Apr. 2, 2002
6362082 Methodology for control of short channel effects in MOS transistors Mar. 26, 2002
6346454 Method of making dual damascene interconnect structure and metal electrode capacitor Feb. 12, 2002
6319784 Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously Nov. 20, 2001
6316311 Method of forming borderless contact Nov. 13, 2001

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