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Class Information
Number: 438/522
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor > Including heat treatment
Description: Process including a step of heat treating the substrate having compound semiconductive regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7419892 |
Semiconductor devices including implanted regions and protective layers and methods of forming the same |
Sep. 2, 2008 |
| 7396747 |
Hetero-integrated strained silicon n- and p-MOSFETs |
Jul. 8, 2008 |
| 7396717 |
Method of forming a MOS transistor |
Jul. 8, 2008 |
| 7329614 |
Heat resistant ohmic electrode and method of manufacturing the same |
Feb. 12, 2008 |
| 7285497 |
Mask, method for manufacturing a mask, method for manufacturing an electro-optical device, and electronic equipment |
Oct. 23, 2007 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7273800 |
Hetero-integrated strained silicon n- and p-MOSFETs |
Sep. 25, 2007 |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 7259094 |
Apparatus and method for heat treating thin film |
Aug. 21, 2007 |
| 7235469 |
Semiconductor device and method for manufacturing the same |
Jun. 26, 2007 |
| 7223615 |
High emissivity capacitor structure |
May. 29, 2007 |
| 7199030 |
Method of manufacturing semiconductor device |
Apr. 3, 2007 |
| 7129141 |
Method for manufacturing a semiconductor device having a low junction leakage current |
Oct. 31, 2006 |
| 7105414 |
Method of manufacturing MOS transistor |
Sep. 12, 2006 |
| 7091114 |
Semiconductor device and method of manufacturing the same |
Aug. 15, 2006 |
| 7084051 |
Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device |
Aug. 1, 2006 |
| 7078300 |
Thin germanium oxynitride gate dielectric for germanium-based devices |
Jul. 18, 2006 |
| 7056815 |
Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same |
Jun. 6, 2006 |
| 7041530 |
Method of production of nano particle dispersed composite material |
May. 9, 2006 |
| 7026230 |
Method for fabricating a memory device |
Apr. 11, 2006 |
| 7026229 |
Athermal annealing with rapid thermal annealing system and method |
Apr. 11, 2006 |
| 7005340 |
Method for manufacturing semiconductor device |
Feb. 28, 2006 |
| 6984538 |
Method for quantum well intermixing using pre-annealing enhanced defects diffusion |
Jan. 10, 2006 |
| 6979618 |
Method of manufacturing NAND flash device |
Dec. 27, 2005 |
| 6977408 |
High-performance non-volatile memory device and fabrication process |
Dec. 20, 2005 |
| 6964917 |
Semi-insulating silicon carbide produced by Neutron transmutation doping |
Nov. 15, 2005 |
| 6939748 |
Nano-size semiconductor component and method of making |
Sep. 6, 2005 |
| 6936526 |
Method of disordering quantum well heterostructures |
Aug. 30, 2005 |
| 6933214 |
Method of manufacturing flash memories of semiconductor devices |
Aug. 23, 2005 |
| 6929831 |
Methods of forming nitride films |
Aug. 16, 2005 |
| 6921709 |
Front side seal to prevent germanium outgassing |
Jul. 26, 2005 |
| 6903005 |
Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics |
Jun. 7, 2005 |
| 6902992 |
Method of fabricating semiconductor device having semiconductor resistance element |
Jun. 7, 2005 |
| 6897118 |
Method of multiple pulse laser annealing to activate ultra-shallow junctions |
May. 24, 2005 |
| 6884703 |
Manufacturing of a low-noise mos device |
Apr. 26, 2005 |
| 6878645 |
Method for manufacturing silicon wafer |
Apr. 12, 2005 |
| 6872644 |
Semiconductor device with non-compounded contacts, and method of making |
Mar. 29, 2005 |
| 6869897 |
Manufacturing method for semiconductor substrate, and semiconductor device having a strained Si layer |
Mar. 22, 2005 |
| 6861340 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
Mar. 1, 2005 |
| 6818534 |
DRAM having improved leakage performance and method for making same |
Nov. 16, 2004 |
| 6806153 |
Method of manufacturing a field effect transistor |
Oct. 19, 2004 |
| 6797595 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
Sep. 28, 2004 |
| 6787449 |
Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics |
Sep. 7, 2004 |
| 6784018 |
Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
Aug. 31, 2004 |
| 6780796 |
Method of forming relaxed SiGe layer |
Aug. 24, 2004 |
| 6774057 |
Method and structure for forming dielectric layers having reduced dielectric constants |
Aug. 10, 2004 |
| 6756257 |
Patterned SOI regions on semiconductor chips |
Jun. 29, 2004 |
| 6743702 |
Nitride-based semiconductor laser device and method of forming the same |
Jun. 1, 2004 |
| 6720241 |
Method for manufacturing semiconductor device |
Apr. 13, 2004 |
| 6713360 |
System for reducing segregation and diffusion of halo implants into highly doped regions |
Mar. 30, 2004 |
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