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Class Information
Number: 438/521
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor > Including multiple implantation steps > Using same conductivity-type dopant
Description: Process wherein the multiple implantation steps introduce electrically active dopant ions of the same conductivity type into one or more regions of the compound semiconductor substrate.










Patents under this class:

Patent Number Title Of Patent Date Issued
8008140 Method for manufacturing semiconductor device including hat-shaped electrode Aug. 30, 2011
7973360 Depletable cathode low charge storage diode Jul. 5, 2011
7879704 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body Feb. 1, 2011
7790586 Plasma doping method Sep. 7, 2010
7759728 Depletable cathode low charge storage diode Jul. 20, 2010
7732246 Method for fabricating vertical CMOS image sensor Jun. 8, 2010
7598162 Method of manufacturing semiconductor device Oct. 6, 2009
7521343 Method of manufacturing semiconductor device Apr. 21, 2009
7507646 Semiconductor devices and method of manufacturing them Mar. 24, 2009
7410860 Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions Aug. 12, 2008
7385246 Depletable cathode low charge storage diode Jun. 10, 2008
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7238600 Semiconductor device and fabrication method thereof Jul. 3, 2007
7172933 Recessed polysilicon gate structure for a strained silicon MOSFET device Feb. 6, 2007
7078325 Process for producing a doped semiconductor substrate Jul. 18, 2006
7005364 Method for manufacturing semiconductor device Feb. 28, 2006
7005334 Zero threshold voltage pFET and method of making same Feb. 28, 2006
6897103 MOS integrated circuit with reduced on resistance May. 24, 2005
6818534 DRAM having improved leakage performance and method for making same Nov. 16, 2004
6777758 Semiconductor device Aug. 17, 2004
6670245 Method for fabricating an ESD device Dec. 30, 2003
6635505 Method of manufacturing an active matrix type semiconductor display device Oct. 21, 2003
6621131 Semiconductor transistor having a stressed channel Sep. 16, 2003
6583060 Dual depth trench isolation Jun. 24, 2003
6541359 Optimized gate implants for reducing dopant effects during gate etching Apr. 1, 2003
6482714 Semiconductor device and method of manufacturing the same Nov. 19, 2002
6433392 Electrostatic discharge device and method Aug. 13, 2002
6383850 Semiconductor device and method of manufacturing the same May. 7, 2002
6291323 Method of fabrication of semiconductor structures by ion implantation Sep. 18, 2001
6232182 Non-volatile semiconductor memory device including memory transistor with a composite gate structure and method of manufacturing the same May. 15, 2001
6040237 Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge Mar. 21, 2000
5773358 Method of forming a field effect transistor and method of forming CMOS integrated circuitry Jun. 30, 1998
5491768 Optical waveguide employing modified gallium arsenide Feb. 13, 1996
5405792 Method of manufacturing schottky barrier gate type fet Apr. 11, 1995
5314833 Method of manufacturing GaAs metal semiconductor field effect transistor May. 24, 1994
5126277 Method of manufacturing a semiconductor device having a resistor Jun. 30, 1992
5036017 Method of making asymmetrical field effect transistor Jul. 30, 1991
5030579 Method of making an FET by ion implantation through a partially opaque implant mask Jul. 9, 1991
4532695 Method of making self-aligned IGFET Aug. 6, 1985
4519127 Method of manufacturing a MESFET by controlling implanted peak surface dopants May. 28, 1985
4494997 Ion implant mask and cap for gallium arsenide structures Jan. 22, 1985
4452646 Method of making planar III-V compound device by ion implantation Jun. 5, 1984
4193182 Passivated V-gate GaAs field-effect transistor and fabrication process therefor Mar. 18, 1980
4116717 Ion implanted eutectic gallium arsenide solar cell Sep. 26, 1978











 
 
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