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Class Information
Number: 438/521
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor > Including multiple implantation steps > Using same conductivity-type dopant
Description: Process wherein the multiple implantation steps introduce electrically active dopant ions of the same conductivity type into one or more regions of the compound semiconductor substrate.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7598162 |
Method of manufacturing semiconductor device |
Oct. 6, 2009 |
| 7521343 |
Method of manufacturing semiconductor device |
Apr. 21, 2009 |
| 7507646 |
Semiconductor devices and method of manufacturing them |
Mar. 24, 2009 |
| 7410860 |
Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions |
Aug. 12, 2008 |
| 7385246 |
Depletable cathode low charge storage diode |
Jun. 10, 2008 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 7238600 |
Semiconductor device and fabrication method thereof |
Jul. 3, 2007 |
| 7172933 |
Recessed polysilicon gate structure for a strained silicon MOSFET device |
Feb. 6, 2007 |
| 7078325 |
Process for producing a doped semiconductor substrate |
Jul. 18, 2006 |
| 7005364 |
Method for manufacturing semiconductor device |
Feb. 28, 2006 |
| 7005334 |
Zero threshold voltage pFET and method of making same |
Feb. 28, 2006 |
| 6897103 |
MOS integrated circuit with reduced on resistance |
May. 24, 2005 |
| 6818534 |
DRAM having improved leakage performance and method for making same |
Nov. 16, 2004 |
| 6777758 |
Semiconductor device |
Aug. 17, 2004 |
| 6670245 |
Method for fabricating an ESD device |
Dec. 30, 2003 |
| 6635505 |
Method of manufacturing an active matrix type semiconductor display device |
Oct. 21, 2003 |
| 6621131 |
Semiconductor transistor having a stressed channel |
Sep. 16, 2003 |
| 6583060 |
Dual depth trench isolation |
Jun. 24, 2003 |
| 6541359 |
Optimized gate implants for reducing dopant effects during gate etching |
Apr. 1, 2003 |
| 6482714 |
Semiconductor device and method of manufacturing the same |
Nov. 19, 2002 |
| 6433392 |
Electrostatic discharge device and method |
Aug. 13, 2002 |
| 6383850 |
Semiconductor device and method of manufacturing the same |
May. 7, 2002 |
| 6291323 |
Method of fabrication of semiconductor structures by ion implantation |
Sep. 18, 2001 |
| 6232182 |
Non-volatile semiconductor memory device including memory transistor with a composite gate structure and method of manufacturing the same |
May. 15, 2001 |
| 6040237 |
Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
Mar. 21, 2000 |
| 5773358 |
Method of forming a field effect transistor and method of forming CMOS integrated circuitry |
Jun. 30, 1998 |
| 5491768 |
Optical waveguide employing modified gallium arsenide |
Feb. 13, 1996 |
| 5405792 |
Method of manufacturing schottky barrier gate type fet |
Apr. 11, 1995 |
| 5314833 |
Method of manufacturing GaAs metal semiconductor field effect transistor |
May. 24, 1994 |
| 5126277 |
Method of manufacturing a semiconductor device having a resistor |
Jun. 30, 1992 |
| 5036017 |
Method of making asymmetrical field effect transistor |
Jul. 30, 1991 |
| 5030579 |
Method of making an FET by ion implantation through a partially opaque implant mask |
Jul. 9, 1991 |
| 4532695 |
Method of making self-aligned IGFET |
Aug. 6, 1985 |
| 4519127 |
Method of manufacturing a MESFET by controlling implanted peak surface dopants |
May. 28, 1985 |
| 4494997 |
Ion implant mask and cap for gallium arsenide structures |
Jan. 22, 1985 |
| 4452646 |
Method of making planar III-V compound device by ion implantation |
Jun. 5, 1984 |
| 4193182 |
Passivated V-gate GaAs field-effect transistor and fabrication process therefor |
Mar. 18, 1980 |
| 4116717 |
Ion implanted eutectic gallium arsenide solar cell |
Sep. 26, 1978 |
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