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Class Information
Number: 438/520
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor > Including multiple implantation steps > Providing nondopant ion (e.g., proton, etc.)
Description: Process wherein a nonelectrically active impurity species is implanted into a compound semiconductor region of the substrate in conjunction with the prior, simultaneous, or subsequent implantation of an electrically active dopant ion.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8704229 Partial poly amorphization for channeling prevention Apr. 22, 2014
8658522 Methods and apparatus for incorporating nitrogen in oxide films Feb. 25, 2014
8559478 Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators Oct. 15, 2013
8546245 Method for manufacturing composite substrate comprising wide bandgap semiconductor layer Oct. 1, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8415231 Photovoltaic device and method for manufacturing the same Apr. 9, 2013
8389385 Semiconductor material manufacture Mar. 5, 2013
8367532 Semiconductor device and fabrication method Feb. 5, 2013
8314019 Metallization and its use in, in particular, an IGBT or a diode Nov. 20, 2012
8293619 Layer transfer of films utilizing controlled propagation Oct. 23, 2012
8288257 Doping profile modification in P3I process Oct. 16, 2012
8236675 Semiconductor device and method of fabricating a semiconductor device Aug. 7, 2012
8124509 Method of forming porous diamond films for semiconductor applications Feb. 28, 2012
8101488 Hydrogen implantation with reduced radiation Jan. 24, 2012
8039375 Shallow junction formation and high dopant activation rate of MOS devices Oct. 18, 2011
8039330 Method for manufacturing semiconductor device Oct. 18, 2011
8003503 Method of integrating stress into a gate stack Aug. 23, 2011
7981707 Method for enhancing optical characteristics of multilayer optoelectronic components Jul. 19, 2011
7982289 Wafer and a method for manufacturing a wafer Jul. 19, 2011
7943468 Penetrating implant for forming a semiconductor device May. 17, 2011
7927975 Semiconductor material manufacture Apr. 19, 2011
7923359 Reduction of sheet resistance of phosphorus implanted poly-silicon Apr. 12, 2011
7902050 Methods and apparatus for incorporating nitrogen in oxide films Mar. 8, 2011
7879667 Blocking pre-amorphization of a gate electrode of a transistor Feb. 1, 2011
7838401 Semiconductor device and manufacturing method thereof Nov. 23, 2010
7795120 Doping wide band gap semiconductors Sep. 14, 2010
7767583 Method to improve uniformity of chemical mechanical polishing planarization Aug. 3, 2010
7754590 Method of manufacturing a semiconductor device comprising a field stop zone at a specific depth Jul. 13, 2010
7674668 Method of manufacturing a semiconductor device Mar. 9, 2010
7662680 Method of producing a semiconductor element in a substrate and a semiconductor element Feb. 16, 2010
7645676 Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures Jan. 12, 2010
7598162 Method of manufacturing semiconductor device Oct. 6, 2009
7544549 Method for manufacturing semiconductor device and MOS field effect transistor Jun. 9, 2009
7521343 Method of manufacturing semiconductor device Apr. 21, 2009
7494852 Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits Feb. 24, 2009
7494906 Technique for transferring strain into a semiconductor region Feb. 24, 2009
7479431 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Jan. 20, 2009
7465633 Methods of forming field effect transistors and capacitor-free dynamic random access memory cells Dec. 16, 2008
7422936 Facilitating removal of sacrificial layers via implantation to form replacement metal gates Sep. 9, 2008
7417248 Transistor with shallow germanium implantation region in channel Aug. 26, 2008
7396747 Hetero-integrated strained silicon n- and p-MOSFETs Jul. 8, 2008
7381584 CMOS image sensor and a method for fabricating the same Jun. 3, 2008
7338822 LED fabrication via ion implant isolation Mar. 4, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7294527 Method of forming a memory cell Nov. 13, 2007
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7273800 Hetero-integrated strained silicon n- and p-MOSFETs Sep. 25, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007

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