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Class Information
Number: 438/518
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of compound semiconductor
Description: Process wherein the semiconductive region into which the electrically active dopant is implanted is a compound semiconductor.

Sub-classes under this class:

Class Number Class Name Patents
438/523 And contact formation (i.e., metallization) 93
438/522 Including heat treatment 285
438/519 Including multiple implantation steps 161

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8691676 Substrate heat treating apparatus, temperature control method of substrate heat treating apparatus, manufacturing method of semiconductor device, temperature control program of substrate heat Apr. 8, 2014
8669590 Methods and apparatus for forming silicon germanium-carbon semiconductor structures Mar. 11, 2014
8559478 Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators Oct. 15, 2013
8524585 Method of manufacturing semiconductor device Sep. 3, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8501516 Method for producing micromechanical patterns having a relief-like sidewall outline shape or an adjustable angle of inclination Aug. 6, 2013
8470699 Method of manufacturing silicon carbide semiconductor apparatus Jun. 25, 2013
8470697 Method of forming p-type compound semiconductor layer Jun. 25, 2013
8470672 Method of manufacturing silicon carbide semiconductor device Jun. 25, 2013
8361893 Semiconductor device and substrate with chalcogen doped region Jan. 29, 2013
8288255 N-type doping of zinc telluride Oct. 16, 2012
8252672 Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same Aug. 28, 2012
8252196 Method for preparing nanotubes of piezoelectric material and nanotubes of piezoelectric material obtained thereby Aug. 28, 2012
8168501 Source/drain strained layers May. 1, 2012
8105925 Method for forming an insulated gate field effect device Jan. 31, 2012
8084282 Wafer-level In-P Si bonding for silicon photonic apparatus Dec. 27, 2011
8062918 Surface treatment to improve resistive-switching characteristics Nov. 22, 2011
8043947 Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate Oct. 25, 2011
8039375 Shallow junction formation and high dopant activation rate of MOS devices Oct. 18, 2011
8030665 Nitride semiconductor device comprising bonded substrate and fabrication method of the same Oct. 4, 2011
8012837 Method of manufacturing semiconductor device Sep. 6, 2011
8003452 Compound semiconductor device and manufacturing method thereof Aug. 23, 2011
7977223 Method of forming nitride semiconductor and electronic device comprising the same Jul. 12, 2011
7834422 Implanted counted dopant ions Nov. 16, 2010
7785993 Method of growing a strained layer Aug. 31, 2010
7767583 Method to improve uniformity of chemical mechanical polishing planarization Aug. 3, 2010
7759186 Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices Jul. 20, 2010
7754590 Method of manufacturing a semiconductor device comprising a field stop zone at a specific depth Jul. 13, 2010
7754589 Method for improving the quality of a SiC crystal Jul. 13, 2010
7737011 Method for improving the quality of an SiC crystal and an SiC semiconductor device Jun. 15, 2010
7700467 Methodology of implementing ultra high temperature (UHT) anneal in fabricating devices that contain sige Apr. 20, 2010
7691729 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source Apr. 6, 2010
7615401 Methods of fabricating multi-layer phase-changeable memory devices Nov. 10, 2009
7601621 Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode Oct. 13, 2009
7575988 Method of fabricating a hybrid substrate Aug. 18, 2009
7557021 Highly doped gate electrode made by rapidly melting and resolidifying the gate electrode Jul. 7, 2009
7482214 Transistor design and layout for performance improvement with strain Jan. 27, 2009
7419892 Semiconductor devices including implanted regions and protective layers and methods of forming the same Sep. 2, 2008
7417248 Transistor with shallow germanium implantation region in channel Aug. 26, 2008
7410876 Methodology to reduce SOI floating-body effect Aug. 12, 2008
7405131 Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor Jul. 29, 2008
7378681 Ridge waveguide device surface passivation by epitaxial regrowth May. 27, 2008
7378334 Nitride semiconductor device comprising bonded substrate and fabrication method of the same May. 27, 2008
7364993 Method of enhancing the photoconductive properties of a semiconductor Apr. 29, 2008
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7172933 Recessed polysilicon gate structure for a strained silicon MOSFET device Feb. 6, 2007
7084051 Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device Aug. 1, 2006
7078300 Thin germanium oxynitride gate dielectric for germanium-based devices Jul. 18, 2006
7056815 Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same Jun. 6, 2006

1 2 3

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