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Class Information
Number: 438/517
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Of semiconductor layer on insulating substrate or layer
Description: Process wherein the electrically active dopant ions are implanted into a semiconductor layer or portion thereof, the semiconductor layer residing on an insulating substrate or layer.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8685847 Semiconductor device having localized extremely thin silicon on insulator channel region Apr. 1, 2014
8673696 SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage Mar. 18, 2014
8659054 Method and structure for pFET junction profile with SiGe channel Feb. 25, 2014
8654537 Printed circuit board with integral radio-frequency shields Feb. 18, 2014
8652885 Method of fabricating thin film transistor Feb. 18, 2014
8647930 Wafer with recessed plug Feb. 11, 2014
8643110 Localized biasing for silicon on insulator structures Feb. 4, 2014
8617948 Reducing resistance in source and drain regions of FinFETs Dec. 31, 2013
8604545 Semiconductor device having single crystal silicon layer with local maximum of carbon concentration and shoulder peak of hydrogen concentration Dec. 10, 2013
8603901 Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same Dec. 10, 2013
8586426 Method of forming isolation structures for SOI devices with ultrathin SOI and ultrathin box Nov. 19, 2013
8536033 SOI semiconductor device comprising a substrate diode and a film diode formed by using a common well implantation mask Sep. 17, 2013
8482009 Silicon-on-insulator substrate with built-in substrate junction Jul. 9, 2013
8481348 Phase change memory and method for fabricating the same Jul. 9, 2013
8476153 Method of manufacturing a semiconductor device Jul. 2, 2013
8466013 Method for manufacturing a semiconductor structure Jun. 18, 2013
8455308 Fully-depleted SON Jun. 4, 2013
8455334 Planar and nanowire field effect transistors Jun. 4, 2013
8445334 SOI FinFET with recessed merged Fins and liner for enhanced stress coupling May. 21, 2013
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same Mar. 5, 2013
8372760 Method and system for using ion implantation for treating a low-k dielectric film Feb. 12, 2013
8367519 Method for the preparation of a multi-layered crystalline structure Feb. 5, 2013
8349668 Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers Jan. 8, 2013
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation Dec. 11, 2012
8324060 NAND flash memory array having pillar structure and fabricating method of the same Dec. 4, 2012
8288215 Semiconductor device and method for manufacturing the same Oct. 16, 2012
8288239 Thermal flux annealing influence of buried species Oct. 16, 2012
8269278 Semiconductor device with .pi.-shaped semiconductor conductive layer and method for making the same Sep. 18, 2012
8263451 Epitaxy profile engineering for FinFETs Sep. 11, 2012
8258022 Array substrate for liquid crystal display device and method of fabricating the same Sep. 4, 2012
8252670 Production method for a lateral electro-optical modulator on silicon with auto-aligned implanted zones Aug. 28, 2012
8241942 Method of fabricating a back-illuminated image sensor Aug. 14, 2012
8198145 Method of manufacturing semiconductor device over SOI substrate Jun. 12, 2012
8183098 SOI device with contact trenches formed during epitaxial growing May. 22, 2012
8173495 Semiconductor on insulator May. 8, 2012
8174069 Power semiconductor device and a method of forming a power semiconductor device May. 8, 2012
8110487 Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel region Feb. 7, 2012
8105926 Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region Jan. 31, 2012
8101500 Semiconductor device with (110)-oriented silicon Jan. 24, 2012
8097541 Method for surface treating semiconductor Jan. 17, 2012
8093115 Tuning of SOI substrate doping Jan. 10, 2012
8088677 Method of manufacturing semiconductor device, and semiconductor device Jan. 3, 2012
8076169 Method of fabricating an electromechanical device including at least one active element Dec. 13, 2011
8062918 Surface treatment to improve resistive-switching characteristics Nov. 22, 2011
8058157 FinFET structure with multiply stressed gate electrode Nov. 15, 2011
8058158 Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same Nov. 15, 2011
8053837 Semiconductor device Nov. 8, 2011
8030146 Organic light emitting diode (OLED) display panel and method of forming polysilicon channel layer thereof Oct. 4, 2011
7989324 Method for manufacturing silicon on sapphire wafer Aug. 2, 2011
7960229 Metal oxide semiconductor transistor with reduced gate height, and related fabrication methods Jun. 14, 2011

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