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Class Information
Number: 438/516
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Including charge neutralization
Description: Process including discharging electrical charges which would otherwise accumulate in the semiconductor substrate due to the implantation of electrically active dopant ions therein.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8647907 Nitride-based semiconductor device and method for fabricating the same Feb. 11, 2014
8587025 Method for forming laterally varying doping concentrations and a semiconductor device Nov. 19, 2013
8399862 Ion implanting apparatus and ion implanting method Mar. 19, 2013
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation Dec. 11, 2012
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8168519 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces May. 1, 2012
8058156 Plasma immersion ion implantation reactor having multiple ion shower grids Nov. 15, 2011
7968439 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces Jun. 28, 2011
7767561 Plasma immersion ion implantation reactor having an ion shower grid Aug. 3, 2010
7767583 Method to improve uniformity of chemical mechanical polishing planarization Aug. 3, 2010
7695564 Thermal management substrate Apr. 13, 2010
7538003 Method for fabricating MOS transistor May. 26, 2009
7410890 Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation Aug. 12, 2008
7396745 Formation of ultra-shallow junctions by gas-cluster ion irradiation Jul. 8, 2008
7397048 Technique for boron implantation Jul. 8, 2008
7381607 Method of forming a spiral inductor in a semiconductor substrate Jun. 3, 2008
7344963 Method of reducing charging damage to integrated circuits during semiconductor manufacturing Mar. 18, 2008
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7170147 Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames Jan. 30, 2007
7138322 Semiconductor device and fabrication method therefor Nov. 21, 2006
7071067 Fabrication of integrated devices using nitrogen implantation Jul. 4, 2006
6964917 Semi-insulating silicon carbide produced by Neutron transmutation doping Nov. 15, 2005
6841460 Anti-type dosage as LDD implant Jan. 11, 2005
6825101 Methods for annealing a substrate and article produced by such methods Nov. 30, 2004
6825133 Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer Nov. 30, 2004
6803275 ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices Oct. 12, 2004
6764917 SOI device with different silicon thicknesses Jul. 20, 2004
6756257 Patterned SOI regions on semiconductor chips Jun. 29, 2004
6693012 Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs Feb. 17, 2004
6610614 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates Aug. 26, 2003
6569691 Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer May. 27, 2003
6537891 Silicon on insulator DRAM process utilizing both fully and partially depleted devices Mar. 25, 2003
6531367 Method for forming ultra-shallow junction by boron plasma doping Mar. 11, 2003
6451674 Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenon Sep. 17, 2002
6403454 Silicon semiconductor devices with .delta.-doped layers Jun. 11, 2002
6372590 Method for making transistor having reduced series resistance Apr. 16, 2002
6300208 Methods for annealing an integrated device using a radiant energy absorber layer Oct. 9, 2001
6287881 Semiconductor device with low parasitic capacitance Sep. 11, 2001
6284580 Method for manufacturing a MOS transistor having multi-layered gate oxide Sep. 4, 2001
6281053 Thin film transistor with reduced hydrogen passivation process time Aug. 28, 2001
6261889 Manufacturing method of semiconductor device Jul. 17, 2001
6261874 Fast recovery diode and method for its manufacture Jul. 17, 2001
6251757 Formation of highly activated shallow abrupt junction by thermal budget engineering Jun. 26, 2001
6248649 Controlled cleavage process and device for patterned films using patterned implants Jun. 19, 2001
6235607 Method for establishing component isolation regions in SOI semiconductor device May. 22, 2001
6228720 Method for making insulated-gate semiconductor element May. 8, 2001
6200887 Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits Mar. 13, 2001
6180476 Dual amorphization implant process for ultra-shallow drain and source extensions Jan. 30, 2001

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