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Class Information
Number: 438/516
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Including charge neutralization
Description: Process including discharging electrical charges which would otherwise accumulate in the semiconductor substrate due to the implantation of electrically active dopant ions therein.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7538003 |
Method for fabricating MOS transistor |
May. 26, 2009 |
| 7410890 |
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
Aug. 12, 2008 |
| 7396745 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation |
Jul. 8, 2008 |
| 7397048 |
Technique for boron implantation |
Jul. 8, 2008 |
| 7381607 |
Method of forming a spiral inductor in a semiconductor substrate |
Jun. 3, 2008 |
| 7344963 |
Method of reducing charging damage to integrated circuits during semiconductor manufacturing |
Mar. 18, 2008 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 7170147 |
Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames |
Jan. 30, 2007 |
| 7138322 |
Semiconductor device and fabrication method therefor |
Nov. 21, 2006 |
| 7071067 |
Fabrication of integrated devices using nitrogen implantation |
Jul. 4, 2006 |
| 6964917 |
Semi-insulating silicon carbide produced by Neutron transmutation doping |
Nov. 15, 2005 |
| 6841460 |
Anti-type dosage as LDD implant |
Jan. 11, 2005 |
| 6825101 |
Methods for annealing a substrate and article produced by such methods |
Nov. 30, 2004 |
| 6825133 |
Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
Nov. 30, 2004 |
| 6803275 |
ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices |
Oct. 12, 2004 |
| 6764917 |
SOI device with different silicon thicknesses |
Jul. 20, 2004 |
| 6756257 |
Patterned SOI regions on semiconductor chips |
Jun. 29, 2004 |
| 6693012 |
Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs |
Feb. 17, 2004 |
| 6620666 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE OF DUAL-GATE CONSTRUCTION, AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY INCLUDING FORMING A REGION OF OVER-LAPPING N-TYPE AND P-TYPE IMPURITIES WI |
Sep. 16, 2003 |
| 6610614 |
Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates |
Aug. 26, 2003 |
| 6569691 |
Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer |
May. 27, 2003 |
| 6537891 |
Silicon on insulator DRAM process utilizing both fully and partially depleted devices |
Mar. 25, 2003 |
| 6531367 |
Method for forming ultra-shallow junction by boron plasma doping |
Mar. 11, 2003 |
| 6451674 |
Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenon |
Sep. 17, 2002 |
| 6403454 |
Silicon semiconductor devices with .delta.-doped layers |
Jun. 11, 2002 |
| 6372590 |
Method for making transistor having reduced series resistance |
Apr. 16, 2002 |
| 6300208 |
Methods for annealing an integrated device using a radiant energy absorber layer |
Oct. 9, 2001 |
| 6287881 |
Semiconductor device with low parasitic capacitance |
Sep. 11, 2001 |
| 6284580 |
Method for manufacturing a MOS transistor having multi-layered gate oxide |
Sep. 4, 2001 |
| 6281053 |
Thin film transistor with reduced hydrogen passivation process time |
Aug. 28, 2001 |
| 6261889 |
Manufacturing method of semiconductor device |
Jul. 17, 2001 |
| 6261874 |
Fast recovery diode and method for its manufacture |
Jul. 17, 2001 |
| 6251757 |
Formation of highly activated shallow abrupt junction by thermal budget engineering |
Jun. 26, 2001 |
| 6248649 |
Controlled cleavage process and device for patterned films using patterned implants |
Jun. 19, 2001 |
| 6235607 |
Method for establishing component isolation regions in SOI semiconductor device |
May. 22, 2001 |
| 6228720 |
Method for making insulated-gate semiconductor element |
May. 8, 2001 |
| 6200887 |
Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits |
Mar. 13, 2001 |
| 6180476 |
Dual amorphization implant process for ultra-shallow drain and source extensions |
Jan. 30, 2001 |
| 6051460 |
Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon |
Apr. 18, 2000 |
| 6030875 |
Method for making semiconductor device having nitrogen-rich active region-channel interface |
Feb. 29, 2000 |
| 5976906 |
Method for manufacturing a solid state image sensing device |
Nov. 2, 1999 |
| 5970353 |
Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion |
Oct. 19, 1999 |
| 5970347 |
High performance mosfet transistor fabrication technique |
Oct. 19, 1999 |
| 5882961 |
Method of manufacturing semiconductor device with reduced charge trapping |
Mar. 16, 1999 |
| 5744397 |
Method of planarizing an insulating layer |
Apr. 28, 1998 |
| 5721091 |
Composition for forming an electrically conductive layer to be used in patterning |
Feb. 24, 1998 |
| 5656510 |
Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control |
Aug. 12, 1997 |
| 5492862 |
Vacuum change neutralization method |
Feb. 20, 1996 |
| 5384266 |
Electronic device manufacture using ion implantation |
Jan. 24, 1995 |
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