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Class Information
Number: 438/515
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Ionized molecules
Description: Process involving the use of ionized molecules possessing sufficient kinetic energy to penetrate the semiconductive substrate with one or more of the elements of the molecule remaining in the semiconductive regions functioning as an electrically active dopant.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7205552 |
Monatomic boron ion source and method |
Apr. 17, 2007 |
| 7186631 |
Method for manufacturing a semiconductor device |
Mar. 6, 2007 |
| 7176108 |
Method of detaching a thin film at moderate temperature after co-implantation |
Feb. 13, 2007 |
| 7144794 |
Ion source, ion implanting device, and manufacturing method of semiconductor devices |
Dec. 5, 2006 |
| 7112501 |
Method of fabrication a silicon-on-insulator device with a channel stop |
Sep. 26, 2006 |
| 7067828 |
Method of and apparatus for measurement and control of a gas cluster ion beam |
Jun. 27, 2006 |
| 7064049 |
Ion implantation method, SOI wafer manufacturing method and ion implantation system |
Jun. 20, 2006 |
| 7060598 |
Method for implanting ions into semiconductor substrate |
Jun. 13, 2006 |
| 6995079 |
Ion implantation method and method for manufacturing semiconductor device |
Feb. 7, 2006 |
| 6878417 |
Method of molecular-scale pattern imprinting at surfaces |
Apr. 12, 2005 |
| 6861320 |
Method of making starting material for chip fabrication comprising a buried silicon nitride layer |
Mar. 1, 2005 |
| 6855622 |
Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam |
Feb. 15, 2005 |
| 6841460 |
Anti-type dosage as LDD implant |
Jan. 11, 2005 |
| 6825101 |
Methods for annealing a substrate and article produced by such methods |
Nov. 30, 2004 |
| 6790747 |
Method and device for controlled cleaving process |
Sep. 14, 2004 |
| 6780736 |
Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby |
Aug. 24, 2004 |
| 6759312 |
Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors |
Jul. 6, 2004 |
| 6756257 |
Patterned SOI regions on semiconductor chips |
Jun. 29, 2004 |
| 6753240 |
Semiconductor device production method |
Jun. 22, 2004 |
| 6727165 |
Fabrication of metal contacts for deep-submicron technologies |
Apr. 27, 2004 |
| 6703291 |
Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions |
Mar. 9, 2004 |
| 6555451 |
Method for making shallow diffusion junctions in semiconductors using elemental doping |
Apr. 29, 2003 |
| 6511899 |
Controlled cleavage process using pressurized fluid |
Jan. 28, 2003 |
| 6495432 |
Method of improving a dual gate CMOS transistor to resist the boron-penetrating effect |
Dec. 17, 2002 |
| 6475886 |
Fabrication method of nanocrystals using a focused-ion beam |
Nov. 5, 2002 |
| 6406978 |
Method of removing silicon carbide |
Jun. 18, 2002 |
| 6358823 |
Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom |
Mar. 19, 2002 |
| 6319850 |
Method of forming dielectric layer with low dielectric constant |
Nov. 20, 2001 |
| 6303468 |
Method for making a thin film of solid material |
Oct. 16, 2001 |
| 6300227 |
Enhanced plasma mode and system for plasma immersion ion implantation |
Oct. 9, 2001 |
| 6291314 |
Controlled cleavage process and device for patterned films using a release layer |
Sep. 18, 2001 |
| 6290804 |
Controlled cleavage process using patterning |
Sep. 18, 2001 |
| 6251755 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
Jun. 26, 2001 |
| 6248649 |
Controlled cleavage process and device for patterned films using patterned implants |
Jun. 19, 2001 |
| 6235600 |
Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition |
May. 22, 2001 |
| 6200887 |
Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits |
Mar. 13, 2001 |
| 6187643 |
Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) |
Feb. 13, 2001 |
| 6153497 |
Method for determining a cause for defects in a film deposited on a wafer |
Nov. 28, 2000 |
| 6124167 |
Method for forming an etch mask during the manufacture of a semiconductor device |
Sep. 26, 2000 |
| 6114224 |
System and method for using N.sub.2 O plasma treatment to eliminate defects at an interface between a stop layer and an integral layered dielectric |
Sep. 5, 2000 |
| 6100172 |
Method for forming a horizontal surface spacer and devices formed thereby |
Aug. 8, 2000 |
| 6054357 |
Semiconductor device and method for fabricating the same |
Apr. 25, 2000 |
| 6051460 |
Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon |
Apr. 18, 2000 |
| 6030863 |
Germanium and arsenic double implanted pre-amorphization process for salicide technology |
Feb. 29, 2000 |
| 6013332 |
Boron doping by decaborane |
Jan. 11, 2000 |
| 6013567 |
Controlled cleavage process using pressurized fluid |
Jan. 11, 2000 |
| 5994207 |
Controlled cleavage process using pressurized fluid |
Nov. 30, 1999 |
| 5985742 |
Controlled cleavage process and device for patterned films |
Nov. 16, 1999 |
| 5985723 |
ROM coding by neuron activation |
Nov. 16, 1999 |
| 5904551 |
Process for low energy implantation of semiconductor substrate using channeling to form retrograde wells |
May. 18, 1999 |
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