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Class Information
Number: 438/515
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Ionized molecules
Description: Process involving the use of ionized molecules possessing sufficient kinetic energy to penetrate the semiconductive substrate with one or more of the elements of the molecule remaining in the semiconductive regions functioning as an electrically active dopant.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7396745 Formation of ultra-shallow junctions by gas-cluster ion irradiation Jul. 8, 2008
7397048 Technique for boron implantation Jul. 8, 2008
7393765 Low temperature CVD process with selected stress of the CVD layer on CMOS devices Jul. 1, 2008
RE40138 Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition Mar. 4, 2008
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
7223676 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer May. 29, 2007
7205552 Monatomic boron ion source and method Apr. 17, 2007
7186631 Method for manufacturing a semiconductor device Mar. 6, 2007
7176108 Method of detaching a thin film at moderate temperature after co-implantation Feb. 13, 2007
7144794 Ion source, ion implanting device, and manufacturing method of semiconductor devices Dec. 5, 2006
7112501 Method of fabrication a silicon-on-insulator device with a channel stop Sep. 26, 2006
7067828 Method of and apparatus for measurement and control of a gas cluster ion beam Jun. 27, 2006
7064049 Ion implantation method, SOI wafer manufacturing method and ion implantation system Jun. 20, 2006
7060598 Method for implanting ions into semiconductor substrate Jun. 13, 2006
6995079 Ion implantation method and method for manufacturing semiconductor device Feb. 7, 2006
6878417 Method of molecular-scale pattern imprinting at surfaces Apr. 12, 2005
6861320 Method of making starting material for chip fabrication comprising a buried silicon nitride layer Mar. 1, 2005
6855622 Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam Feb. 15, 2005
6841460 Anti-type dosage as LDD implant Jan. 11, 2005
6825101 Methods for annealing a substrate and article produced by such methods Nov. 30, 2004
6790747 Method and device for controlled cleaving process Sep. 14, 2004
6780736 Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby Aug. 24, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6756257 Patterned SOI regions on semiconductor chips Jun. 29, 2004
6753240 Semiconductor device production method Jun. 22, 2004
6727165 Fabrication of metal contacts for deep-submicron technologies Apr. 27, 2004
6703291 Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions Mar. 9, 2004
6555451 Method for making shallow diffusion junctions in semiconductors using elemental doping Apr. 29, 2003
6511899 Controlled cleavage process using pressurized fluid Jan. 28, 2003
6495432 Method of improving a dual gate CMOS transistor to resist the boron-penetrating effect Dec. 17, 2002
6475886 Fabrication method of nanocrystals using a focused-ion beam Nov. 5, 2002
6406978 Method of removing silicon carbide Jun. 18, 2002
6358823 Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom Mar. 19, 2002
6319850 Method of forming dielectric layer with low dielectric constant Nov. 20, 2001
6303468 Method for making a thin film of solid material Oct. 16, 2001
6300227 Enhanced plasma mode and system for plasma immersion ion implantation Oct. 9, 2001
6291314 Controlled cleavage process and device for patterned films using a release layer Sep. 18, 2001
6290804 Controlled cleavage process using patterning Sep. 18, 2001
6251755 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Jun. 26, 2001
6248649 Controlled cleavage process and device for patterned films using patterned implants Jun. 19, 2001
6235600 Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition May. 22, 2001
6200887 Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits Mar. 13, 2001
6187643 Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) Feb. 13, 2001
6153497 Method for determining a cause for defects in a film deposited on a wafer Nov. 28, 2000
6124167 Method for forming an etch mask during the manufacture of a semiconductor device Sep. 26, 2000
6114224 System and method for using N.sub.2 O plasma treatment to eliminate defects at an interface between a stop layer and an integral layered dielectric Sep. 5, 2000
6100172 Method for forming a horizontal surface spacer and devices formed thereby Aug. 8, 2000
6054357 Semiconductor device and method for fabricating the same Apr. 25, 2000
6051460 Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon Apr. 18, 2000

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