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Class Information
Number: 438/515
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Ion implantation of dopant into semiconductor region > Ionized molecules
Description: Process involving the use of ionized molecules possessing sufficient kinetic energy to penetrate the semiconductive substrate with one or more of the elements of the molecule remaining in the semiconductive regions functioning as an electrically active dopant.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8679914 Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material Mar. 25, 2014
8642135 Systems and methods for plasma doping microfeature workpieces Feb. 4, 2014
8603896 Method for transferring a monocrystalline semiconductor layer onto a support substrate Dec. 10, 2013
8598022 Isotopically-enriched boron-containing compounds, and methods of making and using same Dec. 3, 2013
8530343 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Sep. 10, 2013
8524584 Carbon implantation process and carbon ion precursor composition Sep. 3, 2013
8497196 Semiconductor device, method for fabricating the same and apparatus for fabricating the same Jul. 30, 2013
8440551 Plasma doping method and manufacturing method of semiconductor device May. 14, 2013
8404572 Multi-zone temperature control for semiconductor wafer Mar. 26, 2013
8389068 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation Mar. 5, 2013
8383496 Plasma doping method and manufacturing method of semiconductor device Feb. 26, 2013
8343859 Non-uniform ion implantation apparatus and method thereof Jan. 1, 2013
8343860 High C content molecules for C implant Jan. 1, 2013
8334193 Method of manufacturing semiconductor device Dec. 18, 2012
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation Dec. 11, 2012
8304033 Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles Nov. 6, 2012
8288257 Doping profile modification in P3I process Oct. 16, 2012
8222119 Apparatus and method of temperature control during cleaving processes of thick materials Jul. 17, 2012
8178951 Compound semiconductor substrate and control for electrical property thereof May. 15, 2012
8105926 Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region Jan. 31, 2012
8101488 Hydrogen implantation with reduced radiation Jan. 24, 2012
8097529 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Jan. 17, 2012
8076210 Method for fabricating metal-oxide semiconductor transistors Dec. 13, 2011
8053847 Method for fabricating metal-oxide semiconductor transistors Nov. 8, 2011
8048788 Method for treating non-planar structures using gas cluster ion beam processing Nov. 1, 2011
7994031 Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions Aug. 9, 2011
7972945 Plasma doping apparatus and method, and method for manufacturing semiconductor device Jul. 5, 2011
7947582 Material infusion in a trap layer structure using gas cluster ion beam processing May. 24, 2011
7943204 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation May. 17, 2011
7919402 Cluster ion implantation for defect engineering Apr. 5, 2011
7884001 Image sensor and method for manufacturing the same Feb. 8, 2011
7855132 Method of manufacturing bonded wafer Dec. 21, 2010
7816253 Surface treatment of inter-layer dielectric Oct. 19, 2010
7785978 Method of forming memory cell using gas cluster ion beams Aug. 31, 2010
7767583 Method to improve uniformity of chemical mechanical polishing planarization Aug. 3, 2010
7759657 Methods for implanting B22Hx and its ionized lower mass byproducts Jul. 20, 2010
7732309 Plasma immersed ion implantation process Jun. 8, 2010
7723219 Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition May. 25, 2010
7723233 Semiconductor device and method of fabricating a semiconductor device May. 25, 2010
7709361 Method for manufacturing a semiconductor device May. 4, 2010
7696495 Method and device for adjusting a beam property in a gas cluster ion beam system Apr. 13, 2010
7678637 CMOS fabrication process Mar. 16, 2010
7518124 Monatomic dopant ion source and method Apr. 14, 2009
7494905 Method for preparing a source material including forming a paste for ion implantation Feb. 24, 2009
7491586 Semiconductor device with leakage implant and method of fabrication Feb. 17, 2009
7485551 Semiconductor-on-insulator type heterostructure and method of fabrication Feb. 3, 2009
7442631 Doping method and method of manufacturing field effect transistor Oct. 28, 2008
7410890 Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation Aug. 12, 2008
7405111 Methods for manufacturing an active matrix display device Jul. 29, 2008
7396746 Methods for stable and repeatable ion implantation Jul. 8, 2008

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