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Class Information
Number: 438/513
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Plasma (e.g., glow discharge, etc.)
Description: Process involving the use of a gaseous vapor of ions in equilibrium or a vapor of ions in vacuum in nonequilibrium state (i.e., a "cold plasma") to introduce a dopant into the semiconductive material.
Patents under this class:
Patent Number |
Title Of Patent |
Date Issued |
8709957 |
Spalling utilizing stressor layer portions |
Apr. 29, 2014 |
8709926 |
Plasma doping method and plasma doping apparatus |
Apr. 29, 2014 |
8703591 |
Method for fabricating black silicon by using plasma immersion ion implantation |
Apr. 22, 2014 |
8679958 |
Methods for forming doped silicon oxide thin films |
Mar. 25, 2014 |
8664098 |
Plasma processing apparatus |
Mar. 4, 2014 |
8658522 |
Methods and apparatus for incorporating nitrogen in oxide films |
Feb. 25, 2014 |
8652953 |
Plasma doping method with gate shutter |
Feb. 18, 2014 |
8652952 |
Semiconductor structure made using improved multiple ion implantation process |
Feb. 18, 2014 |
8652893 |
Semiconductor device and manufacturing method thereof |
Feb. 18, 2014 |
8647968 |
Method for producing a semiconductor layer |
Feb. 11, 2014 |
8642135 |
Systems and methods for plasma doping microfeature workpieces |
Feb. 4, 2014 |
8642380 |
Manufacturing method of semiconductor device |
Feb. 4, 2014 |
8603591 |
Enhanced etch and deposition profile control using plasma sheath engineering |
Dec. 10, 2013 |
8586459 |
Ion implantation with molecular ions containing phosphorus and arsenic |
Nov. 19, 2013 |
8586460 |
Controlling laser annealed junction depth by implant modification |
Nov. 19, 2013 |
8563374 |
Strained semiconductor devices having asymmetrical heterojunction structures and methods for the fabrication thereof |
Oct. 22, 2013 |
8558195 |
Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process |
Oct. 15, 2013 |
8536031 |
Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme |
Sep. 17, 2013 |
8536658 |
Mechanisms for forming ultra shallow junction |
Sep. 17, 2013 |
8524584 |
Carbon implantation process and carbon ion precursor composition |
Sep. 3, 2013 |
8501631 |
Plasma processing system control based on RF voltage |
Aug. 6, 2013 |
8501525 |
Method of fabrication of programmable memory microelectric device |
Aug. 6, 2013 |
8497208 |
Semiconductor device and method for manufacturing the same |
Jul. 30, 2013 |
8497196 |
Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
Jul. 30, 2013 |
8497194 |
Methods of forming doped regions in semiconductor substrates |
Jul. 30, 2013 |
8461030 |
Apparatus and method for controllably implanting workpieces |
Jun. 11, 2013 |
8440551 |
Plasma doping method and manufacturing method of semiconductor device |
May. 14, 2013 |
8431468 |
Noise reduction in semiconductor devices |
Apr. 30, 2013 |
8414790 |
Bevel plasma treatment to enhance wet edge clean |
Apr. 9, 2013 |
8410704 |
Ionization device |
Apr. 2, 2013 |
8409988 |
Method of manufacturing semiconductor device and substrate processing apparatus |
Apr. 2, 2013 |
8409961 |
Alteration method and alteration apparatus for titanium nitride |
Apr. 2, 2013 |
8409939 |
Semiconductor device and method for fabricating the same |
Apr. 2, 2013 |
8408797 |
Method of manufacturing bearing device component coated with photoluminescence material, bearing device component and processing device with an indicator displaying information for a signal in |
Apr. 2, 2013 |
8399342 |
Method for fabricating semiconductor device with buried bit lines |
Mar. 19, 2013 |
8389390 |
Method of impurity introduction and controlled surface removal |
Mar. 5, 2013 |
8389417 |
Semiconductor device and manufacturing method thereof |
Mar. 5, 2013 |
8383522 |
Micro pattern forming method |
Feb. 26, 2013 |
8383496 |
Plasma doping method and manufacturing method of semiconductor device |
Feb. 26, 2013 |
8377804 |
Manufacturing method of semiconductor substrate and semiconductor device |
Feb. 19, 2013 |
8372735 |
USJ techniques with helium-treated substrates |
Feb. 12, 2013 |
8367531 |
Aluminum implant using new compounds |
Feb. 5, 2013 |
8367530 |
Substrate processing apparatus and manufacturing method of semiconductor device |
Feb. 5, 2013 |
8343842 |
Method for reducing plasma discharge damage during processing |
Jan. 1, 2013 |
8343857 |
Manufacturing method of microcrystalline semiconductor film and manufacturing method of semiconductor device |
Jan. 1, 2013 |
8343860 |
High C content molecules for C implant |
Jan. 1, 2013 |
8338317 |
Method for processing a semiconductor wafer or die, and particle deposition device |
Dec. 25, 2012 |
8338211 |
Systems and methods for charging solar cell layers |
Dec. 25, 2012 |
8329567 |
Methods of forming doped regions in semiconductor substrates |
Dec. 11, 2012 |
8324085 |
Method of manufacturing crystalline silicon |
Dec. 4, 2012 |
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