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Class Information
Number: 438/512
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Involving nuclear transmutation doping
Description: Process for introducing a dopant into semiconductor regions of the substrate having a combination of diverse steps in which one step involves the conversion of an element into a dopant by nuclear transmutation.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8519403 |
Angled implantation for deep submicron device optimization |
Aug. 27, 2013 |
| 8505481 |
Apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis |
Aug. 13, 2013 |
| 8084339 |
Remote plasma processing of interface surfaces |
Dec. 27, 2011 |
| 7993952 |
Charge transfer device |
Aug. 9, 2011 |
| 7915152 |
III-V nitride substrate boule and method of making and using the same |
Mar. 29, 2011 |
| 7795120 |
Doping wide band gap semiconductors |
Sep. 14, 2010 |
| 7504326 |
Use of scanning theme implanters and annealers for selective implantation and annealing |
Mar. 17, 2009 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7268065 |
Methods of manufacturing metal-silicide features |
Sep. 11, 2007 |
| 6964917 |
Semi-insulating silicon carbide produced by Neutron transmutation doping |
Nov. 15, 2005 |
| 6913982 |
Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel |
Jul. 5, 2005 |
| 6703292 |
Method of making a semiconductor wafer having a depletable multiple-region semiconductor material |
Mar. 9, 2004 |
| 6635956 |
Semiconductor device, semiconductor module and hard disk |
Oct. 21, 2003 |
| 6576511 |
Method for forming nitride read only memory |
Jun. 10, 2003 |
| 6465333 |
Method of manufacturing a circuit |
Oct. 15, 2002 |
| 6403454 |
Silicon semiconductor devices with .delta.-doped layers |
Jun. 11, 2002 |
| 6251755 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
Jun. 26, 2001 |
| 6114225 |
Local penetrating proton beam transmutation doping method for silicon |
Sep. 5, 2000 |
| 6100168 |
Location selective transmutation doping on silicon wafers using high energy deuterons |
Aug. 8, 2000 |
| 6027953 |
Lateral PN arrayed digital X-ray image sensor |
Feb. 22, 2000 |
| 6001715 |
Non-thermal process for annealing crystalline materials |
Dec. 14, 1999 |
| 4910156 |
Neutron transmutation doping of a silicon wafer |
Mar. 20, 1990 |
| 4836788 |
Production of solid-state image pick-up device with uniform distribution of dopants |
Jun. 6, 1989 |
| 4806497 |
Method for producing large-area power semiconductor components |
Feb. 21, 1989 |
| 4728371 |
Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation |
Mar. 1, 1988 |
| 4639276 |
Method of making thyristor with a high tolerable bias voltage |
Jan. 27, 1987 |
| 4526624 |
Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
Jul. 2, 1985 |
| 4479829 |
Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation |
Oct. 30, 1984 |
| 4469527 |
Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing |
Sep. 4, 1984 |
| 4240844 |
Reducing the switching time of semiconductor devices by neutron irradiation |
Dec. 23, 1980 |
| 4135951 |
Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials |
Jan. 23, 1979 |
| 4129463 |
Polycrystalline silicon semiconducting material by nuclear transmutation doping |
Dec. 12, 1978 |
| 4119441 |
Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction |
Oct. 10, 1978 |
| 4042454 |
Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation |
Aug. 16, 1977 |
| 4027051 |
Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation |
May. 31, 1977 |
| 4025365 |
Method of producing homogeneously doped p-conductive semiconductor materials |
May. 24, 1977 |
| 4000505 |
Thin oxide MOS solar cells |
Dec. 28, 1976 |
| 3971057 |
Lateral photodetector of improved sensitivity |
Jul. 20, 1976 |
| 3967982 |
Method of doping a semiconductor layer |
Jul. 6, 1976 |
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