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Class Information
Number: 438/512
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Involving nuclear transmutation doping
Description: Process for introducing a dopant into semiconductor regions of the substrate having a combination of diverse steps in which one step involves the conversion of an element into a dopant by nuclear transmutation.










Patents under this class:

Patent Number Title Of Patent Date Issued
8519403 Angled implantation for deep submicron device optimization Aug. 27, 2013
8505481 Apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis Aug. 13, 2013
8084339 Remote plasma processing of interface surfaces Dec. 27, 2011
7993952 Charge transfer device Aug. 9, 2011
7915152 III-V nitride substrate boule and method of making and using the same Mar. 29, 2011
7795120 Doping wide band gap semiconductors Sep. 14, 2010
7504326 Use of scanning theme implanters and annealers for selective implantation and annealing Mar. 17, 2009
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7268065 Methods of manufacturing metal-silicide features Sep. 11, 2007
6964917 Semi-insulating silicon carbide produced by Neutron transmutation doping Nov. 15, 2005
6913982 Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel Jul. 5, 2005
6703292 Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Mar. 9, 2004
6635956 Semiconductor device, semiconductor module and hard disk Oct. 21, 2003
6576511 Method for forming nitride read only memory Jun. 10, 2003
6465333 Method of manufacturing a circuit Oct. 15, 2002
6403454 Silicon semiconductor devices with .delta.-doped layers Jun. 11, 2002
6251755 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Jun. 26, 2001
6114225 Local penetrating proton beam transmutation doping method for silicon Sep. 5, 2000
6100168 Location selective transmutation doping on silicon wafers using high energy deuterons Aug. 8, 2000
6027953 Lateral PN arrayed digital X-ray image sensor Feb. 22, 2000
6001715 Non-thermal process for annealing crystalline materials Dec. 14, 1999
4910156 Neutron transmutation doping of a silicon wafer Mar. 20, 1990
4836788 Production of solid-state image pick-up device with uniform distribution of dopants Jun. 6, 1989
4806497 Method for producing large-area power semiconductor components Feb. 21, 1989
4728371 Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation Mar. 1, 1988
4639276 Method of making thyristor with a high tolerable bias voltage Jan. 27, 1987
4526624 Enhanced adhesion of films to semiconductors or metals by high energy bombardment Jul. 2, 1985
4479829 Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation Oct. 30, 1984
4469527 Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing Sep. 4, 1984
4240844 Reducing the switching time of semiconductor devices by neutron irradiation Dec. 23, 1980
4135951 Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials Jan. 23, 1979
4129463 Polycrystalline silicon semiconducting material by nuclear transmutation doping Dec. 12, 1978
4119441 Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction Oct. 10, 1978
4042454 Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation Aug. 16, 1977
4027051 Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation May. 31, 1977
4025365 Method of producing homogeneously doped p-conductive semiconductor materials May. 24, 1977
4000505 Thin oxide MOS solar cells Dec. 28, 1976
3971057 Lateral photodetector of improved sensitivity Jul. 20, 1976
3967982 Method of doping a semiconductor layer Jul. 6, 1976











 
 
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