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Class Information
Number: 438/510
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material
Description: Process involving the incorporation within a semiconductive substrate of material referred to as dopants or dopant modifiers or impurity functioning to alter the electrical characteristics of semiconductive regions thereof.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615456 |
Method for manufacturing SOI substrate |
Nov. 10, 2009 |
| 7605052 |
Method of forming an integrated circuit having a device wafer with a diffused doped backside layer |
Oct. 20, 2009 |
| 7601568 |
MOS transistor and method for producing a MOS transistor structure |
Oct. 13, 2009 |
| 7595261 |
Method and system for manufacturing semiconductor device having less variation in electrical characteristics |
Sep. 29, 2009 |
| 7592242 |
Apparatus and method for controlling diffusion |
Sep. 22, 2009 |
| 7592270 |
Modulation of stress in stress film through ion implantation and its application in stress memorization technique |
Sep. 22, 2009 |
| 7591937 |
Method of fixing macro-objects to an electricity conducting- or semi-conducting surface by means of electrografting, surfaces thus obtained and applications thereof |
Sep. 22, 2009 |
| 7589004 |
Method for implantation of high dopant concentrations in wide band gap materials |
Sep. 15, 2009 |
| 7585749 |
Methods of forming a layer of material on a substrate and structures formed therefrom |
Sep. 8, 2009 |
| 7585763 |
Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer |
Sep. 8, 2009 |
| 7582547 |
Method for junction formation in a semiconductor device and the semiconductor device made thereof |
Sep. 1, 2009 |
| 7575987 |
Method of plasma doping |
Aug. 18, 2009 |
| 7575986 |
Gate interface relaxation anneal method for wafer processing with post-implant dynamic surface annealing |
Aug. 18, 2009 |
| 7569463 |
Method of thermal processing structures formed on a substrate |
Aug. 4, 2009 |
| 7563720 |
Boron doped shell for MEMS device |
Jul. 21, 2009 |
| 7556995 |
MOS transistor manufacturing |
Jul. 7, 2009 |
| 7550323 |
Electrical fuse with a thinned fuselink middle portion |
Jun. 23, 2009 |
| 7550343 |
Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processes |
Jun. 23, 2009 |
| 7550358 |
MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the same |
Jun. 23, 2009 |
| 7531436 |
Highly conductive shallow junction formation |
May. 12, 2009 |
| 7528386 |
Submicron particle removal |
May. 5, 2009 |
| 7521342 |
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same |
Apr. 21, 2009 |
| 7517777 |
Method of manufacturing semiconductor device and semiconductor device formed by the method |
Apr. 14, 2009 |
| 7518124 |
Monatomic dopant ion source and method |
Apr. 14, 2009 |
| 7504326 |
Use of scanning theme implanters and annealers for selective implantation and annealing |
Mar. 17, 2009 |
| 7494904 |
Plasma-assisted doping |
Feb. 24, 2009 |
| 7494905 |
Method for preparing a source material including forming a paste for ion implantation |
Feb. 24, 2009 |
| 7491630 |
Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility |
Feb. 17, 2009 |
| 7491629 |
Method for producing an n-doped field stop zone in a semiconductor body and semiconductor component having a field stop zone |
Feb. 17, 2009 |
| 7491586 |
Semiconductor device with leakage implant and method of fabrication |
Feb. 17, 2009 |
| 7488652 |
Manufacturing method of gate oxidation films |
Feb. 10, 2009 |
| 7482211 |
Junction leakage reduction in SiGe process by implantation |
Jan. 27, 2009 |
| 7482255 |
Method of ion implantation to reduce transient enhanced diffusion |
Jan. 27, 2009 |
| 7468313 |
Engineering strain in thick strained-SOI substrates |
Dec. 23, 2008 |
| 7456085 |
Method for introducing impurities |
Nov. 25, 2008 |
| 7445979 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Nov. 4, 2008 |
| 7442630 |
Method for fabricating forward and reverse blocking devices |
Oct. 28, 2008 |
| 7442640 |
Semiconductor device manufacturing methods |
Oct. 28, 2008 |
| 7432121 |
Isolation process and structure for CMOS imagers |
Oct. 7, 2008 |
| 7432177 |
Post-ion implant cleaning for silicon on insulator substrate preparation |
Oct. 7, 2008 |
| 7432178 |
Bit line implant |
Oct. 7, 2008 |
| 7410890 |
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
Aug. 12, 2008 |
| 7405111 |
Methods for manufacturing an active matrix display device |
Jul. 29, 2008 |
| 7402466 |
Strained silicon CMOS on hybrid crystal orientations |
Jul. 22, 2008 |
| 7397048 |
Technique for boron implantation |
Jul. 8, 2008 |
| 7371648 |
Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same |
May. 13, 2008 |
| 7368369 |
Method for activating P-type semiconductor layer |
May. 6, 2008 |
| 7361540 |
Method of reducing noise disturbing a signal in an electronic device |
Apr. 22, 2008 |
| 7358511 |
Plasma doping method and plasma doping apparatus |
Apr. 15, 2008 |
| 7355226 |
Power semiconductor and method of fabrication |
Apr. 8, 2008 |
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