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Class Information
Number: 438/510
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material
Description: Process involving the incorporation within a semiconductive substrate of material referred to as dopants or dopant modifiers or impurity functioning to alter the electrical characteristics of semiconductive regions thereof.

Sub-classes under this class:

Class Number Class Name Patents
438/535 By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.) 227
438/542 Diffusing a dopant 259
438/537 Fusing dopant with substrate (i.e., alloy junction) 45
438/512 Involving nuclear transmutation doping 39
438/514 Ion implantation of dopant into semiconductor region 821
438/511 Ordering or disordering 39
438/513 Plasma (e.g., glow discharge, etc.) 346

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8709924 Method for conformal plasma immersed ion implantation assisted by atomic layer deposition Apr. 29, 2014
8709925 Method for conductivity control of (Al,In,Ga,B)N Apr. 29, 2014
8691675 Vapor phase deposition processes for doping silicon Apr. 8, 2014
8680645 Semiconductor device and a method for forming a semiconductor device Mar. 25, 2014
8674408 Reducing source/drain resistance of III-V based transistors Mar. 18, 2014
8664632 Memory device Mar. 4, 2014
8658508 Method for manufacturing SOI substrate Feb. 25, 2014
8659029 Low contact resistance semiconductor structure and method of fabricating the same Feb. 25, 2014
8629030 Method for manufacturing SOI substrate Jan. 14, 2014
8623748 Method of forming a semiconductor structure Jan. 7, 2014
8597978 Method for attaching wide bus memory and serial memory to a processor within a chip scale package footprint Dec. 3, 2013
8592794 Resistance random access memory element and method for making the same Nov. 26, 2013
8592873 Semiconductor memory devices and methods of forming the same Nov. 26, 2013
8586458 Process of preparing carbon nanotube having improved conductivity Nov. 19, 2013
8586460 Controlling laser annealed junction depth by implant modification Nov. 19, 2013
8580658 Methods for fabricating graphene device topography and devices formed therefrom Nov. 12, 2013
8574363 Process for production of silicon single crystal, and highly doped N-type semiconductor substrate Nov. 5, 2013
8569831 Integrated circuit arrays and semiconductor constructions Oct. 29, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8492272 Passivated through wafer vias in low-doped semiconductor substrates Jul. 23, 2013
8461032 Use of dopants with different diffusivities for solar cell manufacture Jun. 11, 2013
8455339 Method for fabricating semiconductor device with side junction Jun. 4, 2013
8450193 Techniques for temperature-controlled ion implantation May. 28, 2013
8445357 Method of fabricating semiconductor integrated circuit device and semiconductor integrated circuit device fabricated using the method May. 21, 2013
8420427 Methods for implementation of a switching function in a microscale device and for fabrication of a microscale switch Apr. 16, 2013
8421151 Semiconductor device and process for production thereof Apr. 16, 2013
8421190 Group III nitride semiconductor substrate and manufacturing method thereof Apr. 16, 2013
8421195 Semiconductor devices with graded dopant regions Apr. 16, 2013
8389068 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation Mar. 5, 2013
8377806 Method for controlled growth of silicon carbide and structures produced by same Feb. 19, 2013
8372716 Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer Feb. 12, 2013
8372736 Method and apparatus for reducing flicker noise in a semiconductor device Feb. 12, 2013
8367529 Method for preparing a semiconductor Feb. 5, 2013
8361848 Precise resistor on a semiconductor device Jan. 29, 2013
8354323 Doped graphene electronic materials Jan. 15, 2013
8354332 Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys Jan. 15, 2013
8354709 Semiconductor component with improved robustness Jan. 15, 2013
8350365 Mitigation of well proximity effect in integrated circuits Jan. 8, 2013
8349716 Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device Jan. 8, 2013
8343860 High C content molecules for C implant Jan. 1, 2013
8334193 Method of manufacturing semiconductor device Dec. 18, 2012
8328494 In vacuum optical wafer heater for cryogenic processing Dec. 11, 2012
8329566 Method of manufacturing a high-performance semiconductor device Dec. 11, 2012
8324631 Silicon carbide semiconductor device and method for manufacturing the same Dec. 4, 2012
8304323 Semiconductor element manufacturing method Nov. 6, 2012
8298924 Method for differential spacer removal by wet chemical etch process and device with differential spacer structure Oct. 30, 2012
8283241 Dopant implanting method and doping apparatus Oct. 9, 2012
8278197 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device Oct. 2, 2012
8247318 Modifying catalytic behavior of nanocrystals Aug. 21, 2012
8247329 Nanotube semiconductor devices Aug. 21, 2012

1 2 3 4 5 6 7 8 9

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