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Class Information
Number: 438/509
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Fluid growth from gaseous state combined with subsequent diverse operation > Heat treatment
Description: Process wherein the substrate having the deposited semiconductor active region thereon is heat treated following a step of fluid growth of semiconductive material from the gaseous state.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7566625 |
Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method |
Jul. 28, 2009 |
| 7550328 |
Method for production of thin-film semiconductor device |
Jun. 23, 2009 |
| 7534714 |
Radial temperature control for lattice-mismatched epitaxy |
May. 19, 2009 |
| 7528057 |
Laser annealing method and laser annealing device |
May. 5, 2009 |
| 7452792 |
Relaxation of layers |
Nov. 18, 2008 |
| 7407869 |
Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material |
Aug. 5, 2008 |
| 7402505 |
Single electron devices formed by laser thermal annealing |
Jul. 22, 2008 |
| 7361578 |
Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization |
Apr. 22, 2008 |
| 7358127 |
Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof |
Apr. 15, 2008 |
| 7358162 |
Method of manufacturing semiconductor device |
Apr. 15, 2008 |
| 7358166 |
Relaxed, low-defect SGOI for strained Si CMOS applications |
Apr. 15, 2008 |
| 7344898 |
Method for manufacturing semiconductor device |
Mar. 18, 2008 |
| 7338815 |
Semiconductor device manufacturing method |
Mar. 4, 2008 |
| 7332417 |
Semiconductor structures with structural homogeneity |
Feb. 19, 2008 |
| 7329593 |
Germanium deposition |
Feb. 12, 2008 |
| 7316969 |
Method and apparatus for thermally treating substrates |
Jan. 8, 2008 |
| 7291516 |
Low temperature melt-processing of organic-inorganic hybrid |
Nov. 6, 2007 |
| 7282384 |
Thermoelectric transducing material thin film, sensor device, and its manufacturing method |
Oct. 16, 2007 |
| 7259094 |
Apparatus and method for heat treating thin film |
Aug. 21, 2007 |
| 7256110 |
Crystal manufacturing method |
Aug. 14, 2007 |
| 7256082 |
Production method for semiconductor device |
Aug. 14, 2007 |
| 7244668 |
Methods of manufacturing semiconductor devices |
Jul. 17, 2007 |
| 7202145 |
Strained Si formed by anneal |
Apr. 10, 2007 |
| 7179678 |
EBIC response enhancement in type III-VI semiconductor material on silicon |
Feb. 20, 2007 |
| 7148130 |
Semiconductor device and method of manufacturing the same |
Dec. 12, 2006 |
| 7098119 |
Thermal anneal process for strained-Si devices |
Aug. 29, 2006 |
| 7074698 |
Method of fabricating semiconductor device using plasma-enhanced CVD |
Jul. 11, 2006 |
| 7074721 |
Method for forming thick copper self-aligned dual damascene |
Jul. 11, 2006 |
| 7064037 |
Silicon-germanium virtual substrate and method of fabricating the same |
Jun. 20, 2006 |
| 7056755 |
P-type nitride semiconductor and method of manufacturing the same |
Jun. 6, 2006 |
| 7045432 |
Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
May. 16, 2006 |
| 7041580 |
Laser annealing method and laser annealing device |
May. 9, 2006 |
| 7030419 |
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof |
Apr. 18, 2006 |
| 7026228 |
Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride |
Apr. 11, 2006 |
| 7001787 |
Electrode manufacturing method |
Feb. 21, 2006 |
| 6984560 |
Methods of forming quantum dots in semiconductor devices |
Jan. 10, 2006 |
| 6946373 |
Relaxed, low-defect SGOI for strained Si CMOS applications |
Sep. 20, 2005 |
| 6946370 |
Semiconductor crystal producing method |
Sep. 20, 2005 |
| 6930026 |
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
Aug. 16, 2005 |
| 6924219 |
Method for forming polysilicon germanium layer |
Aug. 2, 2005 |
| 6911367 |
Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions |
Jun. 28, 2005 |
| 6908797 |
Method of manufacturing a semiconductor device |
Jun. 21, 2005 |
| 6897130 |
Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature |
May. 24, 2005 |
| 6887736 |
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
May. 3, 2005 |
| 6881658 |
Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process |
Apr. 19, 2005 |
| 6869897 |
Manufacturing method for semiconductor substrate, and semiconductor device having a strained Si layer |
Mar. 22, 2005 |
| 6864158 |
Method of manufacturing nitride semiconductor substrate |
Mar. 8, 2005 |
| 6861340 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
Mar. 1, 2005 |
| 6858503 |
Depletion to avoid cross contamination |
Feb. 22, 2005 |
| 6806170 |
Method for forming an interface free layer of silicon on a substrate of monocrystalline silicon |
Oct. 19, 2004 |
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