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Class Information
Number: 438/507
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Fluid growth from gaseous state combined with subsequent diverse operation
Description: Process having a nonfluid growth operation which is subsequent to the fluid growth of semiconductive active region from the gaseous state and is not merely perfecting thereto.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7589003 |
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
Sep. 15, 2009 |
| 7585752 |
Process for deposition of semiconductor films |
Sep. 8, 2009 |
| 7553742 |
Method(s) of forming a thin layer |
Jun. 30, 2009 |
| 7531450 |
Method of fabricating semiconductor device having contact hole with high aspect-ratio |
May. 12, 2009 |
| 7524740 |
Localized strain relaxation for strained Si directly on insulator |
Apr. 28, 2009 |
| 7524741 |
Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device |
Apr. 28, 2009 |
| 7491628 |
Method for patterning large scale nano-fibrous surfaces using capillography |
Feb. 17, 2009 |
| 7446024 |
Method of forming nanowires with a narrow diameter distribution |
Nov. 4, 2008 |
| 7427556 |
Method to planarize and reduce defect density of silicon germanium |
Sep. 23, 2008 |
| 7413967 |
Yield improvement in silicon-germanium epitaxial growth |
Aug. 19, 2008 |
| 7378331 |
Methods of vertically stacking wafers using porous silicon |
May. 27, 2008 |
| 7371666 |
Process for producing luminescent silicon nanoparticles |
May. 13, 2008 |
| 7361563 |
Methods of fabricating a semiconductor device using a selective epitaxial growth technique |
Apr. 22, 2008 |
| 7329593 |
Germanium deposition |
Feb. 12, 2008 |
| 7309660 |
Buffer layer for selective SiGe growth for uniform nucleation |
Dec. 18, 2007 |
| 7300859 |
Atmospheric glow discharge with concurrent coating deposition |
Nov. 27, 2007 |
| 7291544 |
Homoepitaxial gallium nitride based photodetector and method of producing |
Nov. 6, 2007 |
| 7279115 |
Method to reduce stacking fault nucleation sites and reduce V.sub.f drift in bipolar devices |
Oct. 9, 2007 |
| 7271077 |
Deposition methods with time spaced and time abutting precursor pulses |
Sep. 18, 2007 |
| 7250357 |
Manufacturing method for strained silicon wafer |
Jul. 31, 2007 |
| 7238596 |
Method for preparing Ge.sub.1-x-ySn.sub.xE.sub.y (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs |
Jul. 3, 2007 |
| 7176054 |
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
Feb. 13, 2007 |
| 7144779 |
Method of forming epitaxial silicon-comprising material |
Dec. 5, 2006 |
| 7135420 |
Semiconductor device and manufacturing method thereof |
Nov. 14, 2006 |
| 7125732 |
Semiconductor light emitting device and its manufacturing method |
Oct. 24, 2006 |
| 7118995 |
Yield improvement in silicon-germanium epitaxial growth |
Oct. 10, 2006 |
| 7115427 |
Red light-emitting device and method for preparing the same |
Oct. 3, 2006 |
| 7084051 |
Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device |
Aug. 1, 2006 |
| 7067405 |
Atmospheric glow discharge with concurrent coating deposition |
Jun. 27, 2006 |
| 7056789 |
Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor |
Jun. 6, 2006 |
| 7041342 |
Thin-film solar cells and method of making |
May. 9, 2006 |
| 7038299 |
Selective synthesis of semiconducting carbon nanotubes |
May. 2, 2006 |
| 7033938 |
Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region |
Apr. 25, 2006 |
| 7029988 |
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium |
Apr. 18, 2006 |
| 7022593 |
SiGe rectification process |
Apr. 4, 2006 |
| 7022545 |
Production method of SiC monitor wafer |
Apr. 4, 2006 |
| 7018554 |
Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
Mar. 28, 2006 |
| 7001787 |
Electrode manufacturing method |
Feb. 21, 2006 |
| 6979370 |
Methods, complexes, and system for forming metal-containing films |
Dec. 27, 2005 |
| 6934312 |
System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom |
Aug. 23, 2005 |
| 6897129 |
Fabrication method of semiconductor device and semiconductor device |
May. 24, 2005 |
| 6890785 |
Nitride semiconductor, semiconductor device, and manufacturing methods for the same |
May. 10, 2005 |
| 6878606 |
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium |
Apr. 12, 2005 |
| 6858519 |
Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells |
Feb. 22, 2005 |
| 6841456 |
Method of making an icosahedral boride structure |
Jan. 11, 2005 |
| 6838153 |
Layered product, capacitor and a method for producing the layered product |
Jan. 4, 2005 |
| 6812117 |
Method for creating a reconfigurable nanometer-scale electronic network |
Nov. 2, 2004 |
| 6787435 |
GaN LED with solderable backside metal |
Sep. 7, 2004 |
| 6784079 |
Method of manufacturing silicon |
Aug. 31, 2004 |
| 6764926 |
Method for obtaining high quality InGaAsN semiconductor devices |
Jul. 20, 2004 |
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