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Class Information
Number: 438/505
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Fluid growth from gaseous state combined with preceding diverse operation > Doping of semiconductor
Description: Process wherein a semiconductive region of the substrate is incorporated with an electrically active dopant species prior to a step of fluid growth of semiconductive material from the vapor or gaseous state.










Sub-classes under this class:

Class Number Class Name Patents
438/506 Ion implantation 111


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
6531072 Phosphor Mar. 11, 2003
6479313 Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes Nov. 12, 2002
6475825 Process for preparing zinc oxide films containing p-type dopant Nov. 5, 2002
6454854 Semiconductor wafer and production method therefor Sep. 24, 2002
6379990 Method of fabricating a micromechanical semiconductor configuration Apr. 30, 2002
6337239 Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrier Jan. 8, 2002
6303403 Method for preparing gallium nitride phosphor Oct. 16, 2001
6268271 Method for forming buried layer inside a semiconductor device Jul. 31, 2001
6265290 Method for fabricating a thin film transistor and a substrate and thin film transistor manufactured using the same Jul. 24, 2001
6258617 Method of manufacturing blue light emitting element Jul. 10, 2001
6218269 Process for producing III-V nitride pn junctions and p-i-n junctions Apr. 17, 2001
6129950 Method of forming a thick polysilicon layer Oct. 10, 2000
6124146 Resistless device fabrication method Sep. 26, 2000
6107156 Silicide layer forming method and semiconductor integrated circuit Aug. 22, 2000
6048781 Semiconductor processing method for providing large grain polysilicon films Apr. 11, 2000
6028876 High power semiconductor laser device and method for fabricating the same Feb. 22, 2000
6017773 Stabilizing process for porous silicon and resulting light emitting device Jan. 25, 2000
5950097 Advanced isolation scheme for deep submicron technology Sep. 7, 1999
5946586 Method of manufacturing a glass-covered semiconductor device Aug. 31, 1999
5937318 Monocrystalline three-dimensional integrated circuit Aug. 10, 1999
5915187 Method of manufacturing a semiconductor device with a pn junction provided through epitaxy Jun. 22, 1999
5888886 Method of doping gan layers p-type for device fabrication Mar. 30, 1999
5856208 Epitaxial wafer and its fabrication method Jan. 5, 1999
5856209 Method of making compound semiconductor device having a reduced resistance Jan. 5, 1999
5840589 Method for fabricating monolithic and monocrystalline all-semiconductor three-dimensional integrated circuits Nov. 24, 1998
5804455 Reduced primary crystalline defect damage in NMOSFETS with an optimized LDD structure Sep. 8, 1998
5792700 Semiconductor processing method for providing large grain polysilicon films Aug. 11, 1998
5792270 Apparatus for forming a pattern of nucleation sites Aug. 11, 1998
5770503 Method of forming low threshold voltage vertical power transistor using epitaxial technology Jun. 23, 1998
5753320 Process for forming deposited film May. 19, 1998
5738722 III-V system compound semiconductor device and method for manufacturing the semiconductor device Apr. 14, 1998
5733815 Process for fabricating intrinsic layer and applications Mar. 31, 1998
5672525 Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity Sep. 30, 1997
5532183 Semiconductor device having heavily doped silicon film Jul. 2, 1996
5525537 Process of producing diamond composite structure for electronic components Jun. 11, 1996
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994
5192680 Method for producing semiconductor device Mar. 9, 1993
5156982 Pattern shift measuring method Oct. 20, 1992
4975387 Formation of epitaxial si-ge heterostructures by solid phase epitaxy Dec. 4, 1990
4859626 Method of forming thin epitaxial layers using multistep growth for autodoping control Aug. 22, 1989
4806502 Method for doping semi-conductor material during epitaxial growth Feb. 21, 1989
4717687 Method for providing buried layer delineation Jan. 5, 1988
4528745 Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques Jul. 16, 1985
4470192 Method of selected area doping of compound semiconductors Sep. 11, 1984
4469527 Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing Sep. 4, 1984
4381956 Self-aligned buried channel fabrication process May. 3, 1983
4171995 Epitaxial deposition process for producing an electrostatic induction type thyristor Oct. 23, 1979
4125418 Utilization of a substrate alignment marker in epitaxial deposition processes Nov. 14, 1978
4000019 Method of retaining substrate profiles during epitaxial deposition Dec. 28, 1976

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