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Class Information
Number: 438/504
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Fluid growth from gaseous state combined with preceding diverse operation > Differential etching
Description: Process wherein the differential etching of the substrate prior to the fluid growth of semiconductive material from the gaseous state is the diverse step.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8664056 Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphization Mar. 4, 2014
8603898 Method for forming group III/V conformal layers on silicon substrates Dec. 10, 2013
8597992 Transistor and manufacturing method of the same Dec. 3, 2013
8536028 Self alignment and assembly fabrication method for stacking multiple material layers Sep. 17, 2013
8524583 Method for growing semipolar nitride Sep. 3, 2013
8518809 Manufacturing method of silicon carbide single crystal Aug. 27, 2013
8507304 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) Aug. 13, 2013
8501594 Methods for forming silicon germanium layers Aug. 6, 2013
8501570 Method of manufacturing source/drain structures Aug. 6, 2013
8481402 Epitaxy silicon on insulator (ESOI) Jul. 9, 2013
8420516 Method for producing n-type group III nitride semiconductor Apr. 16, 2013
8338279 Reduced pattern loading for doped epitaxial process and semiconductor structure Dec. 25, 2012
8329541 InP-based transistor fabrication Dec. 11, 2012
8329511 Nitride crystal with removable surface layer and methods of manufacture Dec. 11, 2012
8329547 Semiconductor process for etching a recess into a substrate by using an etchant that contains hydrogen peroxide Dec. 11, 2012
8283241 Dopant implanting method and doping apparatus Oct. 9, 2012
8268708 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers Sep. 18, 2012
8241940 Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing Aug. 14, 2012
8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film Jul. 10, 2012
8183879 Measuring arrangement, semiconductor arrangement and method for operating a semiconductor component as a reference source May. 22, 2012
8173991 Optoelectronic semiconductor chip having a multiple quantum well structure May. 8, 2012
8173462 Manufacturing method of nitride crystalline film, nitride film and substrate structure May. 8, 2012
8019458 Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures Sep. 13, 2011
7955959 Method for manufacturing GaN-based film LED Jun. 7, 2011
7902053 Method of processing semiconductor wafer Mar. 8, 2011
7897495 Formation of epitaxial layer containing silicon and carbon Mar. 1, 2011
7803690 Epitaxy silicon on insulator (ESOI) Sep. 28, 2010
7737468 Semiconductor devices having recesses filled with semiconductor materials Jun. 15, 2010
7696071 Group III nitride based semiconductor and production method therefor Apr. 13, 2010
7439164 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Oct. 21, 2008
7364958 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding Apr. 29, 2008
7208396 Permanent adherence of the back end of a wafer to an electrical component or sub-assembly Apr. 24, 2007
7189592 Manufacturable single-chip hydrogen sensor Mar. 13, 2007
7129154 Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition Oct. 31, 2006
7122449 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Oct. 17, 2006
7063751 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners Jun. 20, 2006
7060597 Manufacturing method for a silicon substrate having strained layer Jun. 13, 2006
7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Apr. 18, 2006
7018912 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby Mar. 28, 2006
6946371 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Sep. 20, 2005
6878606 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Apr. 12, 2005
6872967 Nitride-based semiconductor device and manufacturing method thereof Mar. 29, 2005
6746925 High-k dielectric bird's beak optimizations using in-situ O2 plasma oxidation Jun. 8, 2004
6602793 Pre-clean chamber Aug. 5, 2003
6528395 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device Mar. 4, 2003
6436827 Fabrication method of a semiconductor device Aug. 20, 2002
6387781 Method of forming three-dimensional semiconductors structures May. 14, 2002
6383940 Exposure method and apparatus May. 7, 2002
6337239 Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrier Jan. 8, 2002
6294443 Method of epitaxy on a silicon substrate comprising areas heavily doped with boron Sep. 25, 2001

1 2 3

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