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Class Information
Number: 438/503
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Fluid growth from gaseous state combined with preceding diverse operation
Description: Process having a nonfluid growth operation which precedes the fluid growth of semiconductive material from the vapor state and is not merely perfecting thereto.

Sub-classes under this class:

Class Number Class Name Patents
438/504 Differential etching 126
438/505 Doping of semiconductor 99

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8679956 Multiple precursor showerhead with by-pass ports Mar. 25, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8669168 Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride Mar. 11, 2014
8664093 Methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom Mar. 4, 2014
8652950 C-rich carbon boron nitride dielectric films for use in electronic devices Feb. 18, 2014
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Feb. 11, 2014
8648328 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces Feb. 11, 2014
8624266 Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device Jan. 7, 2014
8617970 Method of manufacturing semiconductor device Dec. 31, 2013
8586393 Stress sensor for in-situ measurement of package-induced stress in semiconductor devices Nov. 19, 2013
8569153 Method and system for carbon doping control in gallium nitride based devices Oct. 29, 2013
8535635 Method of manufacturing carbon cylindrical structures and biopolymer detection device Sep. 17, 2013
8525303 Photovoltaic device including semiconductor nanocrystals Sep. 3, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8524580 Manufacturing method of semiconductor substrate and substrate processing apparatus Sep. 3, 2013
8524575 Group III nitride crystal and method for producing the same Sep. 3, 2013
8524582 Silicon-germanium hydrides and methods for making and using same Sep. 3, 2013
8518360 Silicon-germanium hydrides and methods for making and using same Aug. 27, 2013
8513101 Method of synthesizing nanowires Aug. 20, 2013
8507950 Method of producing semiconductor wafer and semiconductor wafer Aug. 13, 2013
8501594 Methods for forming silicon germanium layers Aug. 6, 2013
8501596 Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient Aug. 6, 2013
8455333 Method for reuse of wafers for growth of vertically-aligned wire arrays Jun. 4, 2013
8450191 Polysilicon films by HDP-CVD May. 28, 2013
8450131 Imprinted semiconductor multiplex detection array May. 28, 2013
8445363 Method of fabricating an epitaxial layer May. 21, 2013
8404569 Fabrication method and fabrication apparatus of group III nitride crystal substance Mar. 26, 2013
8404571 Film deposition method Mar. 26, 2013
8372687 System, method and apparatus for forming multiple layers in a single process chamber Feb. 12, 2013
8367566 Method for manufacturing semiconductor device and method for processing substrate Feb. 5, 2013
8361892 Multiple precursor showerhead with by-pass ports Jan. 29, 2013
8349715 Nanoscale chemical templating with oxygen reactive materials Jan. 8, 2013
8343858 Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device Jan. 1, 2013
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation Dec. 11, 2012
8278666 Method and apparatus for growing high purity 2H-silicon carbide Oct. 2, 2012
8278128 Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut Oct. 2, 2012
8268720 Method of positioning catalyst nanoparticle and nanowire-based device employing same Sep. 18, 2012
8258025 Method for manufacturing microcrystalline semiconductor film and thin film transistor Sep. 4, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8241421 Epitaxial wafer and production method thereof Aug. 14, 2012
8222123 Method for reuse of wafers for growth of vertically-aligned wire arrays Jul. 17, 2012
8216921 Method for production of silicon wafer for epitaxial substrate and method for production of epitaxial substrate Jul. 10, 2012
8216537 Silicon-germanium hydrides and methods for making and using same Jul. 10, 2012
8216368 Method of fabricating an epitaxially grown layer Jul. 10, 2012
8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film Jul. 10, 2012
8212234 Method of fabricating nanosized filamentary carbon devices over a relatively large-area Jul. 3, 2012
8207013 Method of fabricating silicon nanowire solar cell device having upgraded metallurgical grade silicon substrate Jun. 26, 2012
8183132 Methods for fabricating group III nitride structures with a cluster tool May. 22, 2012
8183879 Measuring arrangement, semiconductor arrangement and method for operating a semiconductor component as a reference source May. 22, 2012

1 2 3 4 5 6

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