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Class Information
Number: 438/495
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Plural fluid growth steps with intervening diverse operation > Doping of semiconductor
Description: Process wherein the incorporation of an electrically active dopant species into a semiconductive region of the substrate intermediate to the steps of fluid growth of semiconductive material is the diverse step.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7595260 |
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
Sep. 29, 2009 |
| 7550365 |
Bonding structure and method of making |
Jun. 23, 2009 |
| 7534685 |
Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor |
May. 19, 2009 |
| 7504279 |
Method for producing semi-conducting devices and devices obtained with this method |
Mar. 17, 2009 |
| 7344909 |
Method for producing semi-conducting devices and devices obtained with this method |
Mar. 18, 2008 |
| 7341787 |
Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers |
Mar. 11, 2008 |
| 7268079 |
Method for fabricating a semiconductor having a field zone |
Sep. 11, 2007 |
| 7160748 |
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device |
Jan. 9, 2007 |
| 7135387 |
Method of manufacturing semiconductor element |
Nov. 14, 2006 |
| 7094670 |
Plasma immersion ion implantation process |
Aug. 22, 2006 |
| 6982212 |
Method of manufacturing a semiconductor device |
Jan. 3, 2006 |
| 6921678 |
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device |
Jul. 26, 2005 |
| 6890816 |
Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices |
May. 10, 2005 |
| 6855991 |
Semiconductor device having a doped lattice matching layer and a method of manufacture therefor |
Feb. 15, 2005 |
| 6776842 |
Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
Aug. 17, 2004 |
| 6740547 |
Method for fabricating thin-film transistor |
May. 25, 2004 |
| 6737339 |
Semiconductor device having a doped lattice matching layer and a method of manufacture therefor |
May. 18, 2004 |
| 6716690 |
Uniformly doped source/drain junction in a double-gate MOSFET |
Apr. 6, 2004 |
| 6686281 |
Method for fabricating a semiconductor device and a substrate processing apparatus |
Feb. 3, 2004 |
| 6635956 |
Semiconductor device, semiconductor module and hard disk |
Oct. 21, 2003 |
| 6593217 |
Method of manufacturing semiconductor device |
Jul. 15, 2003 |
| 6465333 |
Method of manufacturing a circuit |
Oct. 15, 2002 |
| 6387779 |
Method of crystallizing a silicon film and thin film transistor and fabricating method thereof using the same |
May. 14, 2002 |
| 6379990 |
Method of fabricating a micromechanical semiconductor configuration |
Apr. 30, 2002 |
| 6228181 |
Making epitaxial semiconductor device |
May. 8, 2001 |
| 6162706 |
Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
Dec. 19, 2000 |
| 6043139 |
Process for controlling dopant diffusion in a semiconductor layer |
Mar. 28, 2000 |
| 6010937 |
Reduction of dislocations in a heteroepitaxial semiconductor structure |
Jan. 4, 2000 |
| 6008110 |
Semiconductor substrate and method of manufacturing same |
Dec. 28, 1999 |
| 5967795 |
SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
Oct. 19, 1999 |
| 5913107 |
Photosemiconductor device and method of fabricating the same |
Jun. 15, 1999 |
| 5756375 |
Semiconductor growth method with thickness control |
May. 26, 1998 |
| 5733815 |
Process for fabricating intrinsic layer and applications |
Mar. 31, 1998 |
| 5710058 |
Method of making multi-terminal resonant tunneling transistor |
Jan. 20, 1998 |
| 5705406 |
Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique |
Jan. 6, 1998 |
| 5633180 |
Method of forming P-type islands over P-type buried layer |
May. 27, 1997 |
| 5330922 |
Semiconductor process for manufacturing semiconductor devices with increased operating voltages |
Jul. 19, 1994 |
| 5298441 |
Method of making high transconductance heterostructure field effect transistor |
Mar. 29, 1994 |
| 5290392 |
Single crystal diamond wafer fabrication |
Mar. 1, 1994 |
| 5279987 |
Fabricating planar complementary patterned subcollectors with silicon epitaxial layer |
Jan. 18, 1994 |
| 5227330 |
Comprehensive process for low temperature SI epit axial growth |
Jul. 13, 1993 |
| 5141894 |
Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters |
Aug. 25, 1992 |
| 5037769 |
Method of manufacturing semiconductor device |
Aug. 6, 1991 |
| 4855250 |
Method of manufacturing a semiconductor laser with autodoping control |
Aug. 8, 1989 |
| 4775639 |
Method of manufacturing Group III-V compound semiconductor solar battery |
Oct. 4, 1988 |
| 4728626 |
Method for making planar 3D heterepitaxial semiconductor structures with buried epitaxial silicides |
Mar. 1, 1988 |
| 4637129 |
Selective area III-V growth and lift-off using tungsten patterning |
Jan. 20, 1987 |
| 4611388 |
Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor |
Sep. 16, 1986 |
| 4191602 |
Liquid phase epitaxial method of making a high power, vertical channel field effect transistor |
Mar. 4, 1980 |
| 3956037 |
Method of forming semiconductor layers by vapor growth |
May. 11, 1976 |
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