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Class Information
Number: 438/482
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > Amorphous semiconductor
Description: Process wherein the deposited semiconductive material possesses no regular crystalline lattice.

Sub-classes under this class:

Class Number Class Name Patents
438/486 And subsequent crystallization 803
438/483 Compound semiconductor 374
438/485 Deposition utilizing plasma (e.g., glow discharge, etc.) 374
438/484 Running length (e.g., sheet, strip, etc.) 88

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
6214705 Method for fabricating a gate eletrode Apr. 10, 2001
6211038 Semiconductor device, and method for manufacturing the same Apr. 3, 2001
6204156 Method to fabricate an intrinsic polycrystalline silicon film Mar. 20, 2001
6197625 Method of fabricating a thin film transistor Mar. 6, 2001
6197669 Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process Mar. 6, 2001
6191011 Selective hemispherical grain silicon deposition Feb. 20, 2001
6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method Jan. 30, 2001
6171890 Method for manufacturing a semiconductor device Jan. 9, 2001
6169014 Laser crystallization of thin films Jan. 2, 2001
6165875 Methods for modifying solid phase crystallization kinetics for A-Si films Dec. 26, 2000
6162707 Low work function, stable thin films Dec. 19, 2000
6159828 Semiconductor processing method of providing a doped polysilicon layer Dec. 12, 2000
6156590 Method for producing semiconductor device Dec. 5, 2000
6156594 Fabrication of bipolar/CMOS integrated circuits and of a capacitor Dec. 5, 2000
6153477 Ultra short transistor channel length formed using a gate dielectric having a relatively high dielectric constant Nov. 28, 2000
6153496 Process for the production of polycrystalline silicon mouldings substantially free of edge regions and the use of these mouldings Nov. 28, 2000
6150199 Method for fabrication of programmable interconnect structure Nov. 21, 2000
6136671 Method for forming gate oxide layers Oct. 24, 2000
6133112 Thin film formation process Oct. 17, 2000
6124186 Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique Sep. 26, 2000
6117702 Process for making semiconductor photo detector containing crystalline amplification layer Sep. 12, 2000
6117751 Method for manufacturing a mis structure on silicon carbide (SiC) Sep. 12, 2000
6107147 Stacked poly/amorphous silicon gate giving low sheet resistance silicide film at submicron linewidths Aug. 22, 2000
6096626 Semiconductor structures and semiconductor processing methods of forming silicon layers Aug. 1, 2000
6091081 Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film Jul. 18, 2000
6049091 High electron mobility transistor Apr. 11, 2000
6040236 Method for manufacturing silicon thin film conductive element Mar. 21, 2000
6037242 Method of making hetero-structure Mar. 14, 2000
6030886 Growth of GaN on a substrate using a ZnO buffer layer Feb. 29, 2000
6015762 Plasma CVD method Jan. 18, 2000
6013565 High conductivity thin film material for semiconductor device Jan. 11, 2000
5985700 TFT fabrication on leached glass surface Nov. 16, 1999
5985740 Method of manufacturing a semiconductor device including reduction of a catalyst Nov. 16, 1999
5981326 Damascene isolation of CMOS transistors Nov. 9, 1999
5970352 Field effect transistor having elevated source and drain regions and methods for manufacturing the same Oct. 19, 1999
5960323 Laser anneal method for a semiconductor device Sep. 28, 1999
5930657 Method of depositing an amorphous silicon film by APCVD Jul. 27, 1999
5930658 Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures Jul. 27, 1999
5923963 Method of manufacturing a semiconductor display device Jul. 13, 1999
5910019 Method of producing silicon layer having surface controlled to be uneven or even Jun. 8, 1999
5893747 Method of manufacturing a polysilicon film of a semiconductor device Apr. 13, 1999
5888857 Semiconductor device and method for manufacturing the same Mar. 30, 1999
5885884 Process for fabricating a microcrystalline silicon structure Mar. 23, 1999
5874129 Low temperature, high pressure silicon deposition method Feb. 23, 1999
5869351 Method of producing an electro-optical device Feb. 9, 1999
5869389 Semiconductor processing method of providing a doped polysilicon layer Feb. 9, 1999
5851904 Method of manufacturing microcrystalline layers and their utilization Dec. 22, 1998
5824596 POCl.sub.3 process flow for doping polysilicon without forming oxide pillars or gate oxide shorts Oct. 20, 1998
5807495 Bi-based dielectric thin films, and compositions and method for forming them Sep. 15, 1998
5776819 Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas Jul. 7, 1998

1 2 3 4 5 6 7 8 9 10 11

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