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Class Information
Number: 438/481
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > On insulating substrate or layer > Utilizing epitaxial lateral overgrowth
Description: Process wherein the semiconductor material is deposited so as to overlay electrically insulative material and such that epitaxial growth occurs laterally from a crystal seeding region.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
6380051 Layered structure including a nitride compound semiconductor film and method for making the same Apr. 30, 2002
6376387 Method of sealing an epitaxial silicon layer on a substrate Apr. 23, 2002
6372583 Process for making semiconductor device with epitaxially grown source and drain Apr. 16, 2002
6368945 Method and system for providing a continuous motion sequential lateral solidification Apr. 9, 2002
6368925 Method of forming an EPI-channel in a semiconductor device Apr. 9, 2002
6352884 Method for growing crystals having impurities and crystals prepared thereby Mar. 5, 2002
6344388 Method of manufacturing semiconductor device Feb. 5, 2002
6326262 Method for fabricating epitaxy layer Dec. 4, 2001
6320209 Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same Nov. 20, 2001
6319772 Method for making low-leakage DRAM structures using selective silicon epitaxial growth (SEG) on an insulating layer Nov. 20, 2001
6319786 Self-aligned bipolar transistor manufacturing method Nov. 20, 2001
6306735 Method for producing a semiconductor wafer Oct. 23, 2001
6297091 Method for fabricating contact pad for semiconductor device Oct. 2, 2001
6291319 Method for fabricating a semiconductor structure having a stable crystalline interface with silicon Sep. 18, 2001
6284629 Method of fabricating an SOI wafer and SOI wafer fabricated by the method Sep. 4, 2001
6271104 Fabrication of defect free III-nitride materials Aug. 7, 2001
6255198 Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby Jul. 3, 2001
6251769 Method of manufacturing contact pad Jun. 26, 2001
6232205 Method for producing a semiconductor device May. 15, 2001
6204153 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device Mar. 20, 2001
6191011 Selective hemispherical grain silicon deposition Feb. 20, 2001
6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate Jan. 23, 2001
6162706 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic Dec. 19, 2000
6159812 Reduced boron diffusion by use of a pre-anneal Dec. 12, 2000
6150242 Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode Nov. 21, 2000
6139483 Method of forming lateral resonant tunneling devices Oct. 31, 2000
6140195 Method for fabricating a lateral collector structure on a buried oxide layer Oct. 31, 2000
6134368 Optical semiconductor device with a current blocking structure and method for making the same Oct. 17, 2000
6121121 Method for manufacturing gallium nitride compound semiconductor Sep. 19, 2000
6117744 Method of fabricating semiconductor device Sep. 12, 2000
6111277 Semiconductor device as well as light emitting semiconductor device Aug. 29, 2000
6083812 Heteroepitaxy by large surface steps Jul. 4, 2000
6046096 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure Apr. 4, 2000
6010950 Method of manufacturing semiconductor bonded substrate Jan. 4, 2000
5981363 Method and apparatus for high performance transistor devices Nov. 9, 1999
5963822 Method of forming selective epitaxial film Oct. 5, 1999
5950097 Advanced isolation scheme for deep submicron technology Sep. 7, 1999
5943579 Method for forming a diffusion region in a semiconductor device Aug. 24, 1999
5926725 Method of manufacturing semiconductor devices with a reverse tapered sectional configuration Jul. 20, 1999
5912068 Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon Jun. 15, 1999
5910019 Method of producing silicon layer having surface controlled to be uneven or even Jun. 8, 1999
5909623 Manufacturing method of semiconductor device Jun. 1, 1999
5864180 Semiconductor device and method for manufacturing the same Jan. 26, 1999
5855954 Composite structure for manufacturing a microelectronic component and a process for manufacturing the composite structure Jan. 5, 1999
5780343 Method of producing high quality silicon surface for selective epitaxial growth of silicon Jul. 14, 1998
5773351 Isolation layer of semiconductor device and method for fabricating the same Jun. 30, 1998
5770503 Method of forming low threshold voltage vertical power transistor using epitaxial technology Jun. 23, 1998
5767002 Method of manufacturing a multi-layer film each layer having single-layer area Jun. 16, 1998
5723378 Fabrication method of semiconductor device using epitaxial growth process Mar. 3, 1998
5690736 Method of forming crystal Nov. 25, 1997

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