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Class Information
Number: 438/481
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > On insulating substrate or layer > Utilizing epitaxial lateral overgrowth
Description: Process wherein the semiconductor material is deposited so as to overlay electrically insulative material and such that epitaxial growth occurs laterally from a crystal seeding region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5773351 |
Isolation layer of semiconductor device and method for fabricating the same |
Jun. 30, 1998 |
| 5770503 |
Method of forming low threshold voltage vertical power transistor using epitaxial technology |
Jun. 23, 1998 |
| 5767002 |
Method of manufacturing a multi-layer film each layer having single-layer area |
Jun. 16, 1998 |
| 5723378 |
Fabrication method of semiconductor device using epitaxial growth process |
Mar. 3, 1998 |
| 5690736 |
Method of forming crystal |
Nov. 25, 1997 |
| 5686343 |
Process for isolating a semiconductor layer on an insulator |
Nov. 11, 1997 |
| 5681776 |
Planar selective field oxide isolation process using SEG/ELO |
Oct. 28, 1997 |
| 5668046 |
Method of producing a semiconductor on insulating substrate, and a method of forming transistor thereon |
Sep. 16, 1997 |
| 5635411 |
Method of making semiconductor apparatus |
Jun. 3, 1997 |
| 5612230 |
Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of an opening portion for growing a single-crystalline semiconductor body |
Mar. 18, 1997 |
| 5582640 |
Semiconductor device and its fabricating method |
Dec. 10, 1996 |
| 5580381 |
Method of forming crystal |
Dec. 3, 1996 |
| 5565029 |
Method for manufacturing semiconductor device having grown layer on insulating layer |
Oct. 15, 1996 |
| 5534459 |
Method for forming silicon on insulator structured |
Jul. 9, 1996 |
| 5525536 |
Method for producing SOI substrate and semiconductor device using the same |
Jun. 11, 1996 |
| 5498567 |
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor |
Mar. 12, 1996 |
| 5445107 |
Semiconductor device and method of formation |
Aug. 29, 1995 |
| 5427976 |
Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon |
Jun. 27, 1995 |
| 5422299 |
Method of forming single crystalline electrical isolated wells |
Jun. 6, 1995 |
| 5417180 |
Method for forming SOI structure |
May. 23, 1995 |
| 5403771 |
Process for producing a solar cell by means of epitaxial growth process |
Apr. 4, 1995 |
| 5403751 |
Process for producing a thin silicon solar cell |
Apr. 4, 1995 |
| 5401683 |
Method of manufacturing a multi-layered semiconductor substrate |
Mar. 28, 1995 |
| 5397736 |
Liquid epitaxial process for producing three-dimensional semiconductor structures |
Mar. 14, 1995 |
| 5389561 |
Method for making SOI type bipolar transistor |
Feb. 14, 1995 |
| 5387537 |
Process for manufacturing isolated semiconductor components in a semiconductor wafer |
Feb. 7, 1995 |
| 5371038 |
Method of forming a quantum multi-function semiconductor device |
Dec. 6, 1994 |
| 5336633 |
Method of growing single crystal silicon on insulator |
Aug. 9, 1994 |
| 5326716 |
Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
Jul. 5, 1994 |
| 5308445 |
Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate |
May. 3, 1994 |
| 5302544 |
Method of making CCD having a single level electrode of single crystalline silicon |
Apr. 12, 1994 |
| 5296086 |
Method for manufacturing semiconductor device having grown layer on insulating layer |
Mar. 22, 1994 |
| 5294564 |
Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding p |
Mar. 15, 1994 |
| 5294556 |
Method for fabricating an SOI device in alignment with a device region formed in a semiconductor substrate |
Mar. 15, 1994 |
| 5290716 |
Method of manufacturing semiconductor devices |
Mar. 1, 1994 |
| 5278092 |
Method of forming crystal semiconductor film |
Jan. 11, 1994 |
| 5273616 |
Method of producing sheets of crystalline material and devices made therefrom |
Dec. 28, 1993 |
| 5273929 |
Method of manufacture transistor having gradient doping during lateral epitaxy |
Dec. 28, 1993 |
| 5273921 |
Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
Dec. 28, 1993 |
| 5262348 |
Method for the growing of heteroepitaxial layers within a confinement space |
Nov. 16, 1993 |
| 5217564 |
Method of producing sheets of crystalline material and devices made therefrom |
Jun. 8, 1993 |
| 5208167 |
Method for producing SOI substrate |
May. 4, 1993 |
| 5186785 |
Zone melted recrystallized silicon on diamond |
Feb. 16, 1993 |
| 5185286 |
Process for producing laminated semiconductor substrate |
Feb. 9, 1993 |
| 5158906 |
Method of producing dielectric isolated single crystalline thin film |
Oct. 27, 1992 |
| 5110755 |
Process for forming a component insulator on a silicon substrate |
May. 5, 1992 |
| 5096854 |
Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns |
Mar. 17, 1992 |
| 5094714 |
Wafer structure for forming a semiconductor single crystal film |
Mar. 10, 1992 |
| 5091323 |
Process for the fabrication of bipolar device |
Feb. 25, 1992 |
| 5061655 |
Method of producing SOI structures |
Oct. 29, 1991 |
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