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Class Information
Number: 438/481
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > On insulating substrate or layer > Utilizing epitaxial lateral overgrowth
Description: Process wherein the semiconductor material is deposited so as to overlay electrically insulative material and such that epitaxial growth occurs laterally from a crystal seeding region.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
6503799 Method of manufacturing semiconductor device Jan. 7, 2003
6495405 Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films Dec. 17, 2002
6489221 High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates Dec. 3, 2002
6482659 Post-epitaxial thermal oxidation for reducing microsteps on polished semiconductor wafers Nov. 19, 2002
6482710 Bipolar transistor and manufacting method thereof Nov. 19, 2002
6482712 Method for fabricating a bipolar semiconductor device Nov. 19, 2002
6479354 Semiconductor device with selective epitaxial growth layer and isolation method in a semiconductor device Nov. 12, 2002
6468884 Method of forming silicon-contained crystal thin film Oct. 22, 2002
6403156 Method of forming an A1203 film in a semiconductor device Jun. 11, 2002
6403451 Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts Jun. 11, 2002
6391798 Process for planarization a semiconductor substrate May. 21, 2002
6379990 Method of fabricating a micromechanical semiconductor configuration Apr. 30, 2002
6380010 Shielded channel transistor structure with embedded source/drain junctions Apr. 30, 2002
6380051 Layered structure including a nitride compound semiconductor film and method for making the same Apr. 30, 2002
6376387 Method of sealing an epitaxial silicon layer on a substrate Apr. 23, 2002
6372583 Process for making semiconductor device with epitaxially grown source and drain Apr. 16, 2002
6368945 Method and system for providing a continuous motion sequential lateral solidification Apr. 9, 2002
6368925 Method of forming an EPI-channel in a semiconductor device Apr. 9, 2002
6352884 Method for growing crystals having impurities and crystals prepared thereby Mar. 5, 2002
6344388 Method of manufacturing semiconductor device Feb. 5, 2002
6326262 Method for fabricating epitaxy layer Dec. 4, 2001
6319772 Method for making low-leakage DRAM structures using selective silicon epitaxial growth (SEG) on an insulating layer Nov. 20, 2001
6320209 Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same Nov. 20, 2001
6319786 Self-aligned bipolar transistor manufacturing method Nov. 20, 2001
6306735 Method for producing a semiconductor wafer Oct. 23, 2001
6297091 Method for fabricating contact pad for semiconductor device Oct. 2, 2001
6291319 Method for fabricating a semiconductor structure having a stable crystalline interface with silicon Sep. 18, 2001
6284629 Method of fabricating an SOI wafer and SOI wafer fabricated by the method Sep. 4, 2001
6271104 Fabrication of defect free III-nitride materials Aug. 7, 2001
6255198 Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby Jul. 3, 2001
6251769 Method of manufacturing contact pad Jun. 26, 2001
6232205 Method for producing a semiconductor device May. 15, 2001
6204153 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device Mar. 20, 2001
6191011 Selective hemispherical grain silicon deposition Feb. 20, 2001
6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate Jan. 23, 2001
6162706 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic Dec. 19, 2000
6159812 Reduced boron diffusion by use of a pre-anneal Dec. 12, 2000
6150242 Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode Nov. 21, 2000
6139483 Method of forming lateral resonant tunneling devices Oct. 31, 2000
6140195 Method for fabricating a lateral collector structure on a buried oxide layer Oct. 31, 2000
6134368 Optical semiconductor device with a current blocking structure and method for making the same Oct. 17, 2000
6121121 Method for manufacturing gallium nitride compound semiconductor Sep. 19, 2000
6117744 Method of fabricating semiconductor device Sep. 12, 2000
6111277 Semiconductor device as well as light emitting semiconductor device Aug. 29, 2000
6083812 Heteroepitaxy by large surface steps Jul. 4, 2000
6046096 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure Apr. 4, 2000
6010950 Method of manufacturing semiconductor bonded substrate Jan. 4, 2000
5981363 Method and apparatus for high performance transistor devices Nov. 9, 1999
5963822 Method of forming selective epitaxial film Oct. 5, 1999
5950097 Advanced isolation scheme for deep submicron technology Sep. 7, 1999

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