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Class Information
Number: 438/481
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > On insulating substrate or layer > Utilizing epitaxial lateral overgrowth
Description: Process wherein the semiconductor material is deposited so as to overlay electrically insulative material and such that epitaxial growth occurs laterally from a crystal seeding region.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709921 Method for forming a semiconductor device using selective epitaxy of group III-nitride Apr. 29, 2014
8691671 Planar nonpolar group-III nitride films grown on miscut substrates Apr. 8, 2014
8686472 Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate Apr. 1, 2014
8680589 Omega shaped nanowire field effect transistors Mar. 25, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8679925 Methods of manufacturing semiconductor devices and transistors Mar. 25, 2014
8679883 Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure Mar. 25, 2014
8673748 Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, m Mar. 18, 2014
8673749 Semiconductor device manufacturing method Mar. 18, 2014
8673706 Methods of forming layers comprising epitaxial silicon Mar. 18, 2014
8658492 Semiconductor power device integrated with ESD protection diodes Feb. 25, 2014
8652918 Nitride semiconductor structure Feb. 18, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8643060 Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device Feb. 4, 2014
8642454 Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etch Feb. 4, 2014
8628989 Tri-gate field-effect transistors formed by aspect ration trapping Jan. 14, 2014
8629024 Methods of manufacturing semiconductor devices and transistors Jan. 14, 2014
8629045 Reduction of edge effects from aspect ratio trapping Jan. 14, 2014
8623669 Method of fabricating epitaxial semiconductor devices Jan. 7, 2014
8623746 Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor Jan. 7, 2014
8623747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices Jan. 7, 2014
8617966 Methods of forming a span comprising silicon dioxide Dec. 31, 2013
8609514 Process for the transfer of a thin film comprising an inclusion creation step Dec. 17, 2013
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8609518 Re-growing source/drain regions from un-relaxed silicon layer Dec. 17, 2013
8586455 Preventing shorting of adjacent devices Nov. 19, 2013
8575594 Light emitting diode having a barrier layer with a superlattice structure Nov. 5, 2013
8575004 Lift-off structure for substrate of a photoelectric device and the method thereof Nov. 5, 2013
8574968 Epitaxial methods and templates grown by the methods Nov. 5, 2013
8574364 GaN-crystal free-standing substrate and method for producing the same Nov. 5, 2013
8569156 Reducing or eliminating pre-amorphization in transistor manufacture Oct. 29, 2013
8551841 IO ESD device and methods for forming the same Oct. 8, 2013
8546178 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device Oct. 1, 2013
8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same Sep. 24, 2013
8536030 Semipolar semiconductor crystal and method for manufacturing the same Sep. 17, 2013
8530340 Epitaxial semiconductor deposition methods and structures Sep. 10, 2013
8524559 Manufacturing method of power transistor device Sep. 3, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8518806 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device Aug. 27, 2013
8507950 Method of producing semiconductor wafer and semiconductor wafer Aug. 13, 2013
8507367 Separation of semiconductor devices Aug. 13, 2013
8507304 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) Aug. 13, 2013
8501594 Methods for forming silicon germanium layers Aug. 6, 2013
8501596 Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient Aug. 6, 2013
8497187 Method for manufacturing SOI wafer and SOI wafer Jul. 30, 2013
8497191 Selective epitaxial growth method using halogen containing gate sidewall mask Jul. 30, 2013
8497192 Method of manufacturing a semiconductor device and substrate processing apparatus Jul. 30, 2013
8492186 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp Jul. 23, 2013
8486810 Method for fabricating a substrate provided with two active areas with different semiconductor materials Jul. 16, 2013
8481341 Epitaxial film growth in retrograde wells for semiconductor devices Jul. 9, 2013

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