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Class Information
Number: 438/481
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > On insulating substrate or layer > Utilizing epitaxial lateral overgrowth
Description: Process wherein the semiconductor material is deposited so as to overlay electrically insulative material and such that epitaxial growth occurs laterally from a crystal seeding region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615452 |
Method of fabrication of normally-off field-effect semiconductor device |
Nov. 10, 2009 |
| 7615472 |
Method for manufacturing nitride semiconductor substrate |
Nov. 10, 2009 |
| 7608526 |
Strained layers within semiconductor buffer structures |
Oct. 27, 2009 |
| 7605060 |
Method of epitaxial deoposition of an n-doped silicon layer |
Oct. 20, 2009 |
| 7605012 |
ZnO based compound semiconductor light emitting device and method for manufacturing the same |
Oct. 20, 2009 |
| 7595259 |
Method for manufacturing compound semiconductor substrate with pn junction |
Sep. 29, 2009 |
| 7592619 |
Epitaxy layer and method of forming the same |
Sep. 22, 2009 |
| 7589001 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
Sep. 15, 2009 |
| 7579263 |
Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO.sub.2 layer |
Aug. 25, 2009 |
| 7569461 |
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device |
Aug. 4, 2009 |
| 7565639 |
Integrated assist features for epitaxial growth bulk tiles with compensation |
Jul. 21, 2009 |
| 7560364 |
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films |
Jul. 14, 2009 |
| 7553742 |
Method(s) of forming a thin layer |
Jun. 30, 2009 |
| 7547641 |
Super hybrid SOI CMOS devices |
Jun. 16, 2009 |
| 7544591 |
Method of creating isolated electrodes in a nanowire-based device |
Jun. 9, 2009 |
| 7531397 |
Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes |
May. 12, 2009 |
| 7528072 |
Crystallographic preferential etch to define a recessed-region for epitaxial growth |
May. 5, 2009 |
| 7524739 |
Method of improving a surface of a semiconductor substrate |
Apr. 28, 2009 |
| 7524740 |
Localized strain relaxation for strained Si directly on insulator |
Apr. 28, 2009 |
| 7510904 |
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
Mar. 31, 2009 |
| 7510957 |
Complimentary lateral III-nitride transistors |
Mar. 31, 2009 |
| 7504323 |
GaN single crystal substrate and method of making the same |
Mar. 17, 2009 |
| 7504324 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
Mar. 17, 2009 |
| 7491609 |
Semiconductor device and method for manufacturing the same |
Feb. 17, 2009 |
| 7468311 |
Deposition of silicon-containing films from hexachlorodisilane |
Dec. 23, 2008 |
| 7468328 |
Method for producing patterned thin films |
Dec. 23, 2008 |
| 7464702 |
Method of producing III-nitride substrate |
Dec. 16, 2008 |
| 7462867 |
Group III nitride compound semiconductor devices and method for fabricating the same |
Dec. 9, 2008 |
| 7459380 |
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films |
Dec. 2, 2008 |
| 7452789 |
Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting |
Nov. 18, 2008 |
| 7446049 |
Method for fabricating semiconductor device using amorphous carbon layer as sacrificial hard mask |
Nov. 4, 2008 |
| 7446005 |
Manufacturable recessed strained RSD structure and process for advanced CMOS |
Nov. 4, 2008 |
| 7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
Oct. 21, 2008 |
| 7439164 |
Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
Oct. 21, 2008 |
| 7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device |
Oct. 21, 2008 |
| 7435666 |
Epitaxial growth method |
Oct. 14, 2008 |
| 7435608 |
III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
Oct. 14, 2008 |
| 7429504 |
Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods |
Sep. 30, 2008 |
| 7407865 |
Epitaxial growth method |
Aug. 5, 2008 |
| 7402504 |
Epitaxial semiconductor deposition methods and structures |
Jul. 22, 2008 |
| 7399684 |
Defect reduction in semiconductor materials |
Jul. 15, 2008 |
| 7393762 |
Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate |
Jul. 1, 2008 |
| 7393763 |
Manufacturing method of monocrystalline gallium nitride localized substrate |
Jul. 1, 2008 |
| 7390360 |
Organometallic compounds |
Jun. 24, 2008 |
| 7368358 |
Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon body |
May. 6, 2008 |
| 7364990 |
Epitaxial crystal growth process in the manufacturing of a semiconductor device |
Apr. 29, 2008 |
| 7364989 |
Strain control of epitaxial oxide films using virtual substrates |
Apr. 29, 2008 |
| 7361556 |
Method of fabricating semiconductor side wall fin |
Apr. 22, 2008 |
| 7361576 |
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
Apr. 22, 2008 |
| 7361585 |
System for and method of planarizing the contact region of a via by use of a continuous inline vacuum deposition |
Apr. 22, 2008 |
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