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Class Information
Number: 438/480
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) > On insulating substrate or layer > Including implantation of ion which reacts with semiconductor substrate to form insulating layer
Description: Process for the deposition of a semiconductor layer onto an electrically insulating layer including implanting an ion which reacts with the semiconductive regions of the substrate to form an electrically insulating layer.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5918151 Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same Jun. 29, 1999
5888852 Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by Mar. 30, 1999
5863830 Process for the production of a structure having a thin semiconductor film on a substrate Jan. 26, 1999
5741717 Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film Apr. 21, 1998
5658809 SOI substrate and method of producing the same Aug. 19, 1997
5629217 Method and apparatus for SOI transistor May. 13, 1997
5616507 Method of manufacturing substrate having semiconductor on insulator Apr. 1, 1997
5580829 Method for minimizing unwanted metallization in periphery die on a multi-site wafer Dec. 3, 1996
5488004 SOI by large angle oxygen implant Jan. 30, 1996
5422305 Method of forming implanted silicon resonant tunneling barriers Jun. 6, 1995
5143858 Method of fabricating buried insulating layers Sep. 1, 1992
H948 Semiconductor-semiconductor compound insulator-insulator structures Aug. 6, 1991
4997786 Method of fabricating a semiconductor device having buried insulation layer separated by ditches Mar. 5, 1991
4962051 Method of forming a defect-free semiconductor layer on insulator Oct. 9, 1990
4902642 Epitaxial process for silicon on insulator structure Feb. 20, 1990
4863878 Method of making silicon on insalator material using oxygen implantation Sep. 5, 1989
4845044 Producing a compound semiconductor device on an oxygen implanted silicon substrate Jul. 4, 1989
4510671 Dielectrically isolated transducer employing single crystal strain gages Apr. 16, 1985
4479297 Method of fabricating three-dimensional semiconductor devices utilizing CeO.sub.2 and ion-implantation. Oct. 30, 1984
4437225 Method of forming SOS devices by selective laser treatment and reactive formation of isolation regions Mar. 20, 1984
4412868 Method of making integrated circuits utilizing ion implantation and selective epitaxial growth Nov. 1, 1983

1 2 3 4

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