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Class Information
Number: 438/478
Name: Semiconductor device manufacturing: process > Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition)
Description: Process for depositing onto any substrate single or multiple layers of semiconductor material adapted to serve as an active device region, the semiconductive material being deposited as amorphous, polycrystalline, or single crystalline material.


Sub-classes under this class:

Class Number Class Name Patents
438/482 Amorphous semiconductor 352
438/503 Fluid growth from gaseous state combined with preceding diverse operation 135
438/507 Fluid growth from gaseous state combined with subsequent diverse operation 178
438/497 Fluid growth from liquid combined with preceding diverse operation 42
438/500 Fluid growth from liquid combined with subsequent diverse operation 51
438/492 Fluid growth step with preceding and subsequent diverse operation 175
438/479 On insulating substrate or layer 648
438/493 Plural fluid growth steps with intervening diverse operation 62
438/488 Polycrystalline semiconductor 452


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7427515 Electronic element including ferroelectric substance film and method of manufacturing the same Sep. 23, 2008
7427555 Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy Sep. 23, 2008
7422965 Methods of fabricating p-type transistors including germanium channel regions Sep. 9, 2008
7419887 Laser assisted nano deposition Sep. 2, 2008
7410888 Method for manufacturing strained silicon Aug. 12, 2008
7407849 Self-aligned printing Aug. 5, 2008
7405140 Low temperature formation of patterned epitaxial Si containing films Jul. 29, 2008
7399685 Laser beam pattern mask and crystallization method using the same Jul. 15, 2008
7399684 Defect reduction in semiconductor materials Jul. 15, 2008
7399653 Nitride optoelectronic devices with backside deposition Jul. 15, 2008
7399686 Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate Jul. 15, 2008
7387953 Laminated layer structure and method for forming the same Jun. 17, 2008
7387676 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties Jun. 17, 2008
7384481 Method of forming a rare-earth dielectric layer Jun. 10, 2008
7381631 Use of expanding material oxides for nano-fabrication Jun. 3, 2008
7381623 Pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance Jun. 3, 2008
7378331 Methods of vertically stacking wafers using porous silicon May. 27, 2008
7375035 Host and ancillary tool interface methodology for distributed processing May. 20, 2008
7368368 Multi-chamber MOCVD growth apparatus for high performance/high throughput May. 6, 2008
7367865 Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers May. 6, 2008
7364988 Method of manufacturing gallium nitride based high-electron mobility devices Apr. 29, 2008
7361518 Semiconductor element, semiconductor device, and method for fabrication thereof Apr. 22, 2008
7358160 Method of selective formation of compound semiconductor-on-silicon wafer with silicon nanowire buffer layer Apr. 15, 2008
7357838 Relaxed silicon germanium substrate with low defect density Apr. 15, 2008
7358159 Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device Apr. 15, 2008
7351668 Film formation method and apparatus for semiconductor process Apr. 1, 2008
7348186 Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method Mar. 25, 2008
7344961 Methods for nanowire growth Mar. 18, 2008
7335517 Multichip semiconductor device, chip therefor and method of formation thereof Feb. 26, 2008
7329587 Method for the production of semi-conductor chips Feb. 12, 2008
7326295 Fabrication method for polycrystalline silicon thin film and apparatus using the same Feb. 5, 2008
7320931 Interfacial layer for use with high k dielectric materials Jan. 22, 2008
7316966 Method for transferring substrates in a load lock chamber Jan. 8, 2008
7312136 Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance Dec. 25, 2007
7309644 System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoel Dec. 18, 2007
7303980 Laser annealing method and apparatus Dec. 4, 2007
7300829 Low temperature process for TFT fabrication Nov. 27, 2007
7291544 Homoepitaxial gallium nitride based photodetector and method of producing Nov. 6, 2007
7279404 Process for fabricating strained layers of silicon or of a silicon/germanium alloy Oct. 9, 2007
7273799 Deposition over mixed substrates Sep. 25, 2007
7268063 Process for fabricating semiconductor component Sep. 11, 2007
7262116 Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation Aug. 28, 2007
7261920 Process for forming a patterned thin film structure on a substrate Aug. 28, 2007
7256147 Porous body and manufacturing method therefor Aug. 14, 2007
7253084 Deposition from liquid sources Aug. 7, 2007
7253085 Deposition methods Aug. 7, 2007
7253499 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer Aug. 7, 2007
7250357 Manufacturing method for strained silicon wafer Jul. 31, 2007
7247546 Method of forming strained silicon materials with improved thermal conductivity Jul. 24, 2007
7238594 Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures Jul. 3, 2007

1 2 3 4 5 6 7 8


 
 
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