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Class Information
Number: 438/47
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Compound semiconductor > Heterojunction
Description: Process for making a device emissive of electromagnetic radiation having a interface between two dissimilar semiconductor materials, at least one of which is a compound semiconductor, to constitute a junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7504274 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
Mar. 17, 2009 |
| 7502405 |
Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth |
Mar. 10, 2009 |
| 7491565 |
III-nitride light emitting devices fabricated by substrate removal |
Feb. 17, 2009 |
| 7488613 |
Nitride-based light-emitting device and method of manufacturing the same |
Feb. 10, 2009 |
| 7485476 |
Terahertz radiating device based on semiconductor coupled quantum wells |
Feb. 3, 2009 |
| 7482181 |
Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor |
Jan. 27, 2009 |
| 7482183 |
Light emitting diode with degenerate coupling structure |
Jan. 27, 2009 |
| 7482189 |
Light emitting diode and method of fabricating the same |
Jan. 27, 2009 |
| 7482191 |
Highly doped III-nitride semiconductors |
Jan. 27, 2009 |
| 7482617 |
Optical semiconductor device and fabrication method thereof |
Jan. 27, 2009 |
| 7482635 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
Jan. 27, 2009 |
| 7476558 |
Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure |
Jan. 13, 2009 |
| 7473936 |
Light emitting diodes (LEDs) with improved light extraction by roughening |
Jan. 6, 2009 |
| 7468287 |
Method of fabricating a heterojunction of organic semiconducting polymers |
Dec. 23, 2008 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7465595 |
Quantum device, manufacturing method of the same and controlling method of the same |
Dec. 16, 2008 |
| 7462505 |
Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound |
Dec. 9, 2008 |
| 7459326 |
Method for producing and epitaxial substrate for compound semiconductor light-emitting device |
Dec. 2, 2008 |
| 7442569 |
Vertical GaN-based LED and method of manufacturing the same |
Oct. 28, 2008 |
| 7435608 |
III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
Oct. 14, 2008 |
| 7432142 |
Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
Oct. 7, 2008 |
| 7422915 |
Light emitting diode and method for manufacturing the same |
Sep. 9, 2008 |
| 7405096 |
Manufacturing method of nitride semiconductor device and nitride semiconductor device |
Jul. 29, 2008 |
| 7402447 |
Semiconductor laser device and method for fabricating the same |
Jul. 22, 2008 |
| 7396696 |
Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well |
Jul. 8, 2008 |
| 7378680 |
Migration enhanced epitaxy fabrication of quantum wells |
May. 27, 2008 |
| 7374960 |
Stress measurement and stress balance in films |
May. 20, 2008 |
| 7371597 |
Diode having vertical structure and method of manufacturing the same |
May. 13, 2008 |
| 7368310 |
Light generating semiconductor device and method of making the same |
May. 6, 2008 |
| 7361522 |
Growing lower defect semiconductor crystals on highly lattice-mismatched substrates |
Apr. 22, 2008 |
| 7354785 |
Electroluminescent light emitting device |
Apr. 8, 2008 |
| 7348201 |
Creation of anisotropic strain in semiconductor quantum well |
Mar. 25, 2008 |
| 7345297 |
Nitride semiconductor device |
Mar. 18, 2008 |
| 7344958 |
Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications |
Mar. 18, 2008 |
| 7338826 |
Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs |
Mar. 4, 2008 |
| 7332366 |
Light-emitting semiconductor device using group III nitrogen compound |
Feb. 19, 2008 |
| 7297589 |
Transistor device and method |
Nov. 20, 2007 |
| 7279698 |
System and method for an optical modulator having a quantum well |
Oct. 9, 2007 |
| 7279347 |
Method for manufacturing a light-emitting structure of a light-emitting device (LED) |
Oct. 9, 2007 |
| 7276391 |
Manufacture of a semiconductor device |
Oct. 2, 2007 |
| 7271422 |
Semiconductor optical device |
Sep. 18, 2007 |
| 7268007 |
Compound semiconductor, method for manufacturing the same, semiconductor device, and method for manufacturing the same |
Sep. 11, 2007 |
| 7259399 |
Vertical GaN-based LED and method of manufacturing the same |
Aug. 21, 2007 |
| 7260137 |
Vertical-cavity surface-emission type laser diode and fabrication process thereof |
Aug. 21, 2007 |
| 7253015 |
Low doped layer for nitride-based semiconductor device |
Aug. 7, 2007 |
| 7250320 |
Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method the |
Jul. 31, 2007 |
| 7244957 |
Group III nitride compound semiconductor light-emitting device and method for producing the same |
Jul. 17, 2007 |
| 7244630 |
A1InGaP LED having reduced temperature dependence |
Jul. 17, 2007 |
| 7235430 |
Substrates having increased thermal conductivity for semiconductor structures |
Jun. 26, 2007 |
| 7220324 |
Technique for the growth of planar semi-polar gallium nitride |
May. 22, 2007 |
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