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Class Information
Number: 438/47
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Compound semiconductor > Heterojunction
Description: Process for making a device emissive of electromagnetic radiation having a interface between two dissimilar semiconductor materials, at least one of which is a compound semiconductor, to constitute a junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615800 |
Quantum dot light emitting layer |
Nov. 10, 2009 |
| 7615796 |
Light emitting diode having an electrode buffer layer |
Nov. 10, 2009 |
| 7615389 |
GaN lasers on ALN substrates and methods of fabrication |
Nov. 10, 2009 |
| 7615392 |
Light emitting diode and method of making the same |
Nov. 10, 2009 |
| 7612361 |
Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method |
Nov. 3, 2009 |
| 7608853 |
Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same |
Oct. 27, 2009 |
| 7606281 |
Method of producing multi-wavelength semiconductor laser device |
Oct. 20, 2009 |
| 7606280 |
Method of producing multi-wavelength semiconductor laser device |
Oct. 20, 2009 |
| 7601553 |
Method of manufacturing a gallium nitride semiconductor light emitting device |
Oct. 13, 2009 |
| 7602830 |
Monolithic semiconductor laser and method of manufacturing the same |
Oct. 13, 2009 |
| 7601985 |
Semiconductor light-emitting device |
Oct. 13, 2009 |
| 7601621 |
Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode |
Oct. 13, 2009 |
| 7598106 |
Optical semiconductor device and fabrication method therefor |
Oct. 6, 2009 |
| 7582498 |
Resonant cavity light emitting devices and associated method |
Sep. 1, 2009 |
| 7579627 |
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus |
Aug. 25, 2009 |
| 7579205 |
Method of fabricating light emitting device and thus-fabricated light emitting device |
Aug. 25, 2009 |
| 7579200 |
Semiconductor light emitting apparatus and method of fabricating the same |
Aug. 25, 2009 |
| 7576365 |
Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same |
Aug. 18, 2009 |
| 7572652 |
Light emitting element and production method thereof |
Aug. 11, 2009 |
| 7569461 |
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device |
Aug. 4, 2009 |
| 7563629 |
Method of fabricating vertical structure LEDs |
Jul. 21, 2009 |
| 7564075 |
Semiconductor device |
Jul. 21, 2009 |
| 7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
Jun. 30, 2009 |
| 7550368 |
Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device |
Jun. 23, 2009 |
| 7544971 |
Lateral current blocking light-emitting diode and method for manufacturing the same |
Jun. 9, 2009 |
| 7541208 |
Methods for preserving strained semiconductor substrate layers during CMOS processing |
Jun. 2, 2009 |
| 7538395 |
Method of forming low capacitance ESD device and structure therefor |
May. 26, 2009 |
| 7537950 |
Nitride-based light emitting heterostructure |
May. 26, 2009 |
| 7534638 |
III-nitride light emitting devices grown on templates to reduce strain |
May. 19, 2009 |
| 7531370 |
Light-emitting diode and its manufacturing method |
May. 12, 2009 |
| 7521269 |
Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same |
Apr. 21, 2009 |
| 7521270 |
OLED patterning method |
Apr. 21, 2009 |
| 7508010 |
Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode |
Mar. 24, 2009 |
| 7504274 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
Mar. 17, 2009 |
| 7502405 |
Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth |
Mar. 10, 2009 |
| 7491565 |
III-nitride light emitting devices fabricated by substrate removal |
Feb. 17, 2009 |
| 7488613 |
Nitride-based light-emitting device and method of manufacturing the same |
Feb. 10, 2009 |
| 7485476 |
Terahertz radiating device based on semiconductor coupled quantum wells |
Feb. 3, 2009 |
| 7482617 |
Optical semiconductor device and fabrication method thereof |
Jan. 27, 2009 |
| 7482635 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
Jan. 27, 2009 |
| 7482181 |
Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor |
Jan. 27, 2009 |
| 7482189 |
Light emitting diode and method of fabricating the same |
Jan. 27, 2009 |
| 7482183 |
Light emitting diode with degenerate coupling structure |
Jan. 27, 2009 |
| 7482191 |
Highly doped III-nitride semiconductors |
Jan. 27, 2009 |
| 7476558 |
Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure |
Jan. 13, 2009 |
| 7473936 |
Light emitting diodes (LEDs) with improved light extraction by roughening |
Jan. 6, 2009 |
| 7468287 |
Method of fabricating a heterojunction of organic semiconducting polymers |
Dec. 23, 2008 |
| 7465595 |
Quantum device, manufacturing method of the same and controlling method of the same |
Dec. 16, 2008 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7462505 |
Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound |
Dec. 9, 2008 |
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