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Class Information
Number: 438/47
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Compound semiconductor > Heterojunction
Description: Process for making a device emissive of electromagnetic radiation having a interface between two dissimilar semiconductor materials, at least one of which is a compound semiconductor, to constitute a junction.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709846 Solid state lighting devices and associated methods of manufacturing Apr. 29, 2014
8686451 Optical-electronic component and method for production thereof Apr. 1, 2014
8686450 Method of manufacturing a vertically-structured GaN-based light emitting diode Apr. 1, 2014
8686397 Low droop light emitting diode structure on gallium nitride semipolar substrates Apr. 1, 2014
8685767 Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes Apr. 1, 2014
8684749 LED with improved injection efficiency Apr. 1, 2014
8679868 Bifacial solar cell using ion implantation Mar. 25, 2014
8680507 A1N inter-layers in III-N material grown on DBR/silicon substrate Mar. 25, 2014
8680509 Nitride semiconductor device and method of producing the same Mar. 25, 2014
8680586 Semiconductor light emitting device including GaAs substrate and method for manufacturing the same Mar. 25, 2014
8669129 Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp Mar. 11, 2014
8664026 Method for fabricating semiconductor lighting chip Mar. 4, 2014
8664086 Semiconductor wafer, semiconductor thin film, and method for manufacturing semiconductor thin film devices Mar. 4, 2014
8658449 Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same Feb. 25, 2014
8659005 Staggered composition quantum well method and device Feb. 25, 2014
8652856 Method for use in making electronic devices having thin-film magnetic components Feb. 18, 2014
8653499 Light-emitting diode with strain-relaxed layer for reducing strain in active layer Feb. 18, 2014
8653501 Emitting device and manufacturing method therefor Feb. 18, 2014
8653503 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys Feb. 18, 2014
8647907 Nitride-based semiconductor device and method for fabricating the same Feb. 11, 2014
8647905 Semiconductor light emitting device and method for manufacturing same Feb. 11, 2014
8642361 Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration Feb. 4, 2014
8642369 Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same Feb. 4, 2014
8642992 Group III nitride compound semiconductor light emitting device Feb. 4, 2014
8637338 Method for producing integrated optical device Jan. 28, 2014
8637337 Method for producing integrated optical device Jan. 28, 2014
8629425 Tunable wavelength light emitting diode Jan. 14, 2014
8629531 Structure and method to reduce wafer warp for gallium nitride on silicon wafer Jan. 14, 2014
8623747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices Jan. 7, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8618551 Semiconductor light emitting device Dec. 31, 2013
8609449 Method of fabricating semiconductor substrate and method of fabricating light emitting device Dec. 17, 2013
8597961 Method for improving internal quantum efficiency of group-III nitride-based light emitting device Dec. 3, 2013
8598605 Semiconductor light-emitting device Dec. 3, 2013
8592837 Semiconductor light emitting element, electronic apparatus, and light emitting device Nov. 26, 2013
8592823 Compound semiconductor device and method for manufacturing the same Nov. 26, 2013
8592802 (Al, In, Ga, B)N device structures on a patterned substrate Nov. 26, 2013
8592309 Laser spike annealing for GaN LEDs Nov. 26, 2013
8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer Nov. 26, 2013
8590136 Method of fabricating a dual single-crystal backplate microphone Nov. 26, 2013
8586964 P-type semiconductor device comprising type-2 quantum well and fabrication method thereof Nov. 19, 2013
8581268 Light emitting diode with a current concentrating structure Nov. 12, 2013
8580593 Epitaxial formation structures and associated methods of manufacturing solid state lighting devices Nov. 12, 2013
8580587 Light emitting device and manufacturing method thereof Nov. 12, 2013
8575593 Semiconductor light emitting device and fabrication method thereof Nov. 5, 2013
8563992 Light emitting apparatus and multi-surface pattern substrate Oct. 22, 2013
8557622 Epitaxial growth of in-plane nanowires and nanowire devices Oct. 15, 2013
8551797 Method for fabricating semiconductor laser Oct. 8, 2013
8546167 Gallium nitride-based compound semiconductor light-emitting element Oct. 1, 2013
8546166 III nitride crystal substrate, and light-emitting device and method of its manufacture Oct. 1, 2013

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