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Class Information
Number: 438/455
Name: Semiconductor device manufacturing: process > Bonding of plural semiconductor substrates
Description: Process in which plural semiconductive substrates are joined together into a coherent body, such as by thermal treatment.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5004705 |
Inverted epitaxial process |
Apr. 2, 1991 |
| 4998665 |
Bonding structure of substrates and method for bonding substrates |
Mar. 12, 1991 |
| 4997787 |
Method for fabricating a semiconductor film which is electrically isolated from a substrate |
Mar. 5, 1991 |
| 4962879 |
Method for bubble-free bonding of silicon wafers |
Oct. 16, 1990 |
| 4939101 |
Method of making direct bonded wafers having a void free interface |
Jul. 3, 1990 |
| 4935386 |
Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating |
Jun. 19, 1990 |
| 4902641 |
Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure |
Feb. 20, 1990 |
| 4888304 |
Method of manufacturing an soi-type semiconductor device |
Dec. 19, 1989 |
| 4883215 |
Method for bubble-free bonding of silicon wafers |
Nov. 28, 1989 |
| 4878957 |
Dielectrically isolated semiconductor substrate |
Nov. 7, 1989 |
| 4837177 |
Method of making bipolar semiconductor device having a conductive recombination layer |
Jun. 6, 1989 |
| 4837182 |
Method of producing sheets of crystalline material |
Jun. 6, 1989 |
| 4837186 |
Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same |
Jun. 6, 1989 |
| 4826787 |
Method for adhesion of silicon or silicon dioxide plate |
May. 2, 1989 |
| 4818323 |
Method of making a void free wafer via vacuum lamination |
Apr. 4, 1989 |
| 4774196 |
Method of bonding semiconductor wafers |
Sep. 27, 1988 |
| 4771016 |
Using a rapid thermal process for manufacturing a wafer bonded soi semiconductor |
Sep. 13, 1988 |
| 4738935 |
Method of manufacturing compound semiconductor apparatus |
Apr. 19, 1988 |
| 4708883 |
Annealing process |
Nov. 24, 1987 |
| 4704785 |
Process for making a buried conductor by fusing two wafers |
Nov. 10, 1987 |
| 4701424 |
Hermetic sealing of silicon |
Oct. 20, 1987 |
| 4700466 |
Method of manufacturing semiconductor device wherein silicon substrates are bonded together |
Oct. 20, 1987 |
| 4671846 |
Method of bonding crystalline silicon bodies |
Jun. 9, 1987 |
| 4649627 |
Method of fabricating silicon-on-insulator transistors with a shared element |
Mar. 17, 1987 |
| H208 |
Packaging microminiature devices |
Feb. 3, 1987 |
| 4638552 |
Method of manufacturing semiconductor substrate |
Jan. 27, 1987 |
| 4612083 |
Process of fabricating three-dimensional semiconductor device |
Sep. 16, 1986 |
| 4596069 |
Three dimensional processing for monolithic IMPATTs |
Jun. 24, 1986 |
| 4551629 |
Detector array module-structure and fabrication |
Nov. 5, 1985 |
| 4542397 |
Self aligning small scale integrated circuit semiconductor chips to form large area arrays |
Sep. 17, 1985 |
| 4526624 |
Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
Jul. 2, 1985 |
| 4457972 |
Enhanced adhesion by high energy bombardment |
Jul. 3, 1984 |
| 4396456 |
Method of peeling epilayers |
Aug. 2, 1983 |
| RE30652 |
Method for constructing a thermoelectric module and the module so obtained |
Jun. 16, 1981 |
| 4246693 |
Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum |
Jan. 27, 1981 |
| 4063965 |
Making deep power diodes |
Dec. 20, 1977 |
| 4054478 |
Method of manufacturing a thermoelectric device |
Oct. 18, 1977 |
| 4032363 |
Low power high voltage thermopile |
Jun. 28, 1977 |
| 3972742 |
Deep power diode |
Aug. 3, 1976 |
| 3956023 |
Process for making a deep power diode by thermal migration of dopant |
May. 11, 1976 |
| 3930303 |
Method for manufacturing compact thermoelectric modules |
Jan. 6, 1976 |
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