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Class Information
Number: 438/452
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > Plural oxidation steps to form recessed oxide
Description: Process having multiple steps of oxidizing the semiconductor substrate in the region of the recessed oxide.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5453397 Manufacture of semiconductor device with field oxide Sep. 26, 1995
5393694 Advanced process for recessed poly buffered locos Feb. 28, 1995
5374586 Multi-LOCOS (local oxidation of silicon) isolation process Dec. 20, 1994
5372951 Method of making a semiconductor having selectively enhanced field oxide areas Dec. 13, 1994
5358890 Process for fabricating isolation regions in a semiconductor device Oct. 25, 1994
5326715 Method for forming a field oxide film of a semiconductor device Jul. 5, 1994
5316966 Method of providing mask alignment marks May. 31, 1994
5244843 Process for forming a thin oxide layer Sep. 14, 1993
5236861 Manufacturing method of metal-insulator-semiconductor device using trench isolation technique Aug. 17, 1993
5219766 Semiconductor device having a radiation resistance and method for manufacturing same Jun. 15, 1993
5173444 Method for forming a semiconductor device isolation region Dec. 22, 1992
5151381 Method for local oxidation of silicon employing two oxidation steps Sep. 29, 1992
5134089 MOS transistor isolation method Jul. 28, 1992
5128274 Method for producing a semiconductor device having a LOCOS insulating film with at least two different thickness Jul. 7, 1992
5120571 Floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates Jun. 9, 1992
5118641 Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit Jun. 2, 1992
5110756 Method of semiconductor integrated circuit manufacturing which includes processing for reducing defect density May. 5, 1992
5057451 Method of forming an antifuse element with substantially reduced capacitance using the LOCOS technique Oct. 15, 1991
4971923 Method of making semiconductor device with different oxide film thicknesses Nov. 20, 1990
4942449 Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips Jul. 17, 1990
4863562 Method for forming a non-planar structure on the surface of a semiconductor substrate Sep. 5, 1989
4758530 Doubly-self-aligned hole-within-a-hole structure in semiconductor fabrication involving a double LOCOS process aligned with sidewall spacers Jul. 19, 1988
4721687 Method of increasing the thickness of a field oxide Jan. 26, 1988
4622738 Method of making integrated bipolar semiconductor device by first forming junction isolation regions and recessed oxide isolation regions without birds beak Nov. 18, 1986
4622096 Method of manufacturing a semiconductor device comprising a silicon body, in which a sunken oxide layer is locally provided Nov. 11, 1986
4551910 MOS Isolation processing Nov. 12, 1985
4520553 Process for manufacturing an integrated insulated-gate field-effect transistor Jun. 4, 1985
4481705 Process for doping field isolation regions in CMOS integrated circuits Nov. 13, 1984
4473940 Method of producing a semiconductor device Oct. 2, 1984
4459325 Semiconductor device and method for manufacturing the same Jul. 10, 1984
4288910 Method of manufacturing a semiconductor device Sep. 15, 1981
4278705 Sequentially annealed oxidation of silicon to fill trenches with silicon dioxide Jul. 14, 1981

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