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Class Information
Number: 438/45
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Dopant introduction into semiconductor region
Description: Process having a step of introducing a dopant into a semiconductive region of the substrate.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
4124826 Current confinement in semiconductor lasers Nov. 7, 1978
4115150 Method of producing optoelectronic devices with control of light propagation Sep. 19, 1978
RE29648 Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities May. 30, 1978
4071945 Method for manufacturing a semiconductor display device Feb. 7, 1978
RE29395 Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region Sep. 13, 1977
4045257 III(A)-(VB) Type luminescent diode Aug. 30, 1977
4004342 Fabrication of ion implanted P-N junction devices Jan. 25, 1977
4001056 Epitaxial deposition of III-V compounds containing isoelectronic impurities Jan. 4, 1977
3984262 Method of making a substrate striped planar laser Oct. 5, 1976
3964940 Methods of producing gallium phosphide yellow light emitting diodes Jun. 22, 1976
3963537 Process for the production of a semiconductor luminescence diode Jun. 15, 1976
3959026 Method of preparation of a semiconducting ternary alloy from the semiconducting compound ZnTe by ion May. 25, 1976
3940847 Method of fabricating ion implanted znse p-n junction devices Mar. 2, 1976
3940289 Flash melting method for producing new impurity distributions in solids Feb. 24, 1976
3936322 Method of making a double heterojunction diode laser Feb. 3, 1976

1 2 3 4 5 6 7 8










 
 
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