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Class Information
Number: 438/45
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Dopant introduction into semiconductor region
Description: Process having a step of introducing a dopant into a semiconductive region of the substrate.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5055422 Process for the construction of semiconductor lasers and lasers obtained by the process Oct. 8, 1991
5047366 Method of diffusing silicon into compound semiconductors and compound semiconductor devices Sep. 10, 1991
5045498 Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface Sep. 3, 1991
5043291 Method of manufacturing a broadband high emission power semiconductor laser from a BRS type buried stripe structure, and resulting laser Aug. 27, 1991
5019519 Method for the manufacture of optical semiconductor device May. 28, 1991
4987097 Method of manufacturing a semiconductor laser device Jan. 22, 1991
4983541 Semiconductor laser device fabrication Jan. 8, 1991
4980313 Method of producing a semiconductor laser Dec. 25, 1990
4960730 Method of making a semiconductor light emitting device using out-diffusion from a buried stripe Oct. 2, 1990
4937835 Semiconductor laser device and a method of producing same Jun. 26, 1990
4855250 Method of manufacturing a semiconductor laser with autodoping control Aug. 8, 1989
4849372 Semiconductor laser device and a method of producing same Jul. 18, 1989
4843032 Process for producing a DFB laser with a diffraction grating superlattice Jun. 27, 1989
4810670 Method of manufacturing an embedded type semiconductor laser Mar. 7, 1989
4795241 Device and method for providing optical bistability with free carrier recombination centers introduced into an optical guide surrounding semiconductor layer portion Jan. 3, 1989
4789642 Method for fabricating low loss crystalline silicon waveguides by dielectric implantation Dec. 6, 1988
4755485 Method of making light-emitting diodes Jul. 5, 1988
4748132 Micro fabrication process for semiconductor structure using coherent electron beams May. 31, 1988
4742013 Process for the production of a semiconductor laser with tape geometry and laser obtained by this process May. 3, 1988
4731345 Method of making a semiconductor laser by continuous liquid phase epitaxy with out-diffusion from one or more adjacent layers Mar. 15, 1988
4716127 Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species Dec. 29, 1987
4716125 Method of producing semiconductor laser Dec. 29, 1987
4713354 Method of heat treatment for reduction of dislocation density near III-V substrate surface Dec. 15, 1987
4677740 Forming monolithic planar opto-isolators by selective implantation and proton bombardment Jul. 7, 1987
4670966 Method of making a semiconductor laser with end zones for reducing non-radiating recombination Jun. 9, 1987
H147 High resistivity group III-V compounds by helium bombardment Nov. 4, 1986
4610731 Shallow impurity neutralization Sep. 9, 1986
4585299 Process for fabricating optical wave-guiding components and components made by the process Apr. 29, 1986
4545824 Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion Oct. 8, 1985
4532694 Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components Aug. 6, 1985
4523961 Method of improving current confinement in semiconductor lasers by inert ion bombardment Jun. 18, 1985
4514896 Method of forming current confinement channels in semiconductor devices May. 7, 1985
4394180 Method of forming high resistivity regions in GaAs by deuteron implantation Jul. 19, 1983
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor Jun. 21, 1983
4376138 Optical waveguides in InGaAsP and InP Mar. 8, 1983
4376307 Semiconductor laser or intensifier Mar. 8, 1983
4341570 Process for producing an injection laser and laser obtained by this process Jul. 27, 1982
4318752 Heterojunction semiconductor laser fabrication utilizing laser radiation Mar. 9, 1982
4295148 Method of fabrication of electroluminescent and photodetecting diodes Oct. 13, 1981
4264381 Fabrication of injection lasers utilizing a porous host diffusion layer Apr. 28, 1981
4263056 Method for the manufacture of light emitting and/or photodetective diodes Apr. 21, 1981
4233090 Method of making a laser diode Nov. 11, 1980
4222791 Method of making heterojunction devices by accurate control of gold pattern mask and proton bombardment Sep. 16, 1980
4218270 Method of fabricating electroluminescent element utilizing multi-stage epitaxial deposition and substrate removal techniques Aug. 19, 1980
4213808 Fabrication of injection lasers utilizing epitaxial growth and selective diffusion Jul. 22, 1980
4183038 Semiconductor laser device Jan. 8, 1980
4166278 Semiconductor injection laser device Aug. 28, 1979
4154625 Annealing of uncapped compound semiconductor materials by pulsed energy deposition May. 15, 1979
4154630 Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process May. 15, 1979
4144635 Method of manufacturing an indicating element Mar. 20, 1979

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