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Class Information
Number: 438/45
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Dopant introduction into semiconductor region
Description: Process having a step of introducing a dopant into a semiconductive region of the substrate.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7569431 |
Semiconductor device and manufacturing method thereof |
Aug. 4, 2009 |
| 7556977 |
Semiconductor manufacturing method and semiconductor laser device manufacturing method |
Jul. 7, 2009 |
| 7517717 |
Wide dynamic range sensor having a pinned diode with multiple pinned voltages |
Apr. 14, 2009 |
| 7508011 |
Semiconductor light generating device |
Mar. 24, 2009 |
| 7501666 |
Method for forming p-type semiconductor region, and semiconductor element |
Mar. 10, 2009 |
| 7488612 |
Liquid crystal display device and fabricating method thereof |
Feb. 10, 2009 |
| 7486437 |
Apparatus and method for optical amplification in indirect-gap semiconductors |
Feb. 3, 2009 |
| 7485485 |
Method and apparatus for making a MEMS scanner |
Feb. 3, 2009 |
| 7485476 |
Terahertz radiating device based on semiconductor coupled quantum wells |
Feb. 3, 2009 |
| 7482190 |
Micromechanical strained semiconductor by wafer bonding |
Jan. 27, 2009 |
| 7473570 |
Method for forming epitaxial layers of gallium nitride-based compound semiconductors |
Jan. 6, 2009 |
| 7459354 |
Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor |
Dec. 2, 2008 |
| 7396745 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation |
Jul. 8, 2008 |
| 7384808 |
Fabrication method of high-brightness light emitting diode having reflective layer |
Jun. 10, 2008 |
| 7381267 |
Heteroatomic single-crystal layers |
Jun. 3, 2008 |
| 7371596 |
Parallel-beam scanning for surface patterning of materials |
May. 13, 2008 |
| 7361518 |
Semiconductor element, semiconductor device, and method for fabrication thereof |
Apr. 22, 2008 |
| 7341787 |
Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers |
Mar. 11, 2008 |
| 7332416 |
Methods to manufacture contaminant-gettering materials in the surface of EUV optics |
Feb. 19, 2008 |
| 7314794 |
Low-cost high-performance planar back-gate CMOS |
Jan. 1, 2008 |
| 7259036 |
Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products |
Aug. 21, 2007 |
| 7256062 |
Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof |
Aug. 14, 2007 |
| 7256426 |
Rare earth element-doped silicon/silicon dioxide lattice structure |
Aug. 14, 2007 |
| 7229899 |
Process for the transfer of a thin film |
Jun. 12, 2007 |
| 7223641 |
Semiconductor device, method for manufacturing the same, liquid crystal television and EL television |
May. 29, 2007 |
| 7208338 |
Method of manufacturing semiconductor light emitting device |
Apr. 24, 2007 |
| 7166485 |
Superlattice nanocrystal Si-SiO.sub.2 electroluminescence device |
Jan. 23, 2007 |
| 7160748 |
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device |
Jan. 9, 2007 |
| 7157730 |
Angled wafer rotating ion implantation |
Jan. 2, 2007 |
| 7135387 |
Method of manufacturing semiconductor element |
Nov. 14, 2006 |
| 7135772 |
Nitride semiconductor laser |
Nov. 14, 2006 |
| 7118928 |
Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices |
Oct. 10, 2006 |
| 7078256 |
Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof |
Jul. 18, 2006 |
| 7075119 |
Optical semiconductor device and method of fabricating optical semiconductor device |
Jul. 11, 2006 |
| 7056755 |
P-type nitride semiconductor and method of manufacturing the same |
Jun. 6, 2006 |
| 7045377 |
Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
May. 16, 2006 |
| 7037743 |
Semiconductor device and method for producing the same |
May. 2, 2006 |
| 7030419 |
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof |
Apr. 18, 2006 |
| 6996147 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
Feb. 7, 2006 |
| 6992321 |
Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
Jan. 31, 2006 |
| 6960486 |
Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material |
Nov. 1, 2005 |
| 6939728 |
Method of fabricating silicon emitter with a low porosity heavily doped contact layer |
Sep. 6, 2005 |
| 6927080 |
Structures for analyzing electromigration, and methods of using same |
Aug. 9, 2005 |
| 6924163 |
Semiconductor light emitting device and its manufacturing method |
Aug. 2, 2005 |
| 6921678 |
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device |
Jul. 26, 2005 |
| 6906353 |
High speed implanted VCSEL |
Jun. 14, 2005 |
| 6905900 |
Versatile method and system for single mode VCSELs |
Jun. 14, 2005 |
| 6878562 |
Method for shifting the bandgap energy of a quantum well layer |
Apr. 12, 2005 |
| 6876686 |
Method of fabricating active layers in a laser utilizing InP-based active regions |
Apr. 5, 2005 |
| 6872967 |
Nitride-based semiconductor device and manufacturing method thereof |
Mar. 29, 2005 |
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