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Class Information
Number: 438/449
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > Dopant addition
Description: Process including a step of introducing an electrically active dopant species into semiconductive regions of the substrate.

Sub-classes under this class:

Class Number Class Name Patents
438/450 Implanting through recessed oxide 126
438/451 Plural doping steps 144

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8691653 Semiconductor structure with reduced surface field effect and manufacturing process thereof Apr. 8, 2014
8551861 Semiconductor device and method for manufacturing the same Oct. 8, 2013
8368170 Reducing device performance drift caused by large spacings between active regions Feb. 5, 2013
8124496 Cable connector assembly with improved printed circuit board Feb. 28, 2012
8115271 Reducing device performance drift caused by large spacings between active regions Feb. 14, 2012
7977202 Reducing device performance drift caused by large spacings between active regions Jul. 12, 2011
7968424 Method of implantation Jun. 28, 2011
7951679 Method for fabricating semiconductor device May. 31, 2011
7709350 Method for manufacturing a semiconductor elemental device May. 4, 2010
7659179 Method of forming transistor using step STI profile in memory device Feb. 9, 2010
7601610 Method for manufacturing a high integration density power MOS device Oct. 13, 2009
7566482 SOI by oxidation of porous silicon Jul. 28, 2009
7560330 CMOS image sensor and method for manufacturing the same Jul. 14, 2009
7550355 Low-leakage transistor and manufacturing method thereof Jun. 23, 2009
7541260 Trench diffusion isolation in semiconductor devices Jun. 2, 2009
7429514 Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device Sep. 30, 2008
7300834 Methods of forming wells in semiconductor devices Nov. 27, 2007
7244661 Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate Jul. 17, 2007
7235460 Method of forming active and isolation areas with split active patterning Jun. 26, 2007
7157340 Method of fabrication of semiconductor device Jan. 2, 2007
7015111 Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device Mar. 21, 2006
6949445 Method of forming angled implant for trench isolation Sep. 27, 2005
6861320 Method of making starting material for chip fabrication comprising a buried silicon nitride layer Mar. 1, 2005
6855618 Radiation hardened semiconductor device Feb. 15, 2005
6846722 Method for isolating a hybrid device in an image sensor Jan. 25, 2005
6790752 Methods of controlling VSS implants on memory devices, and system for performing same Sep. 14, 2004
6746936 Method for forming isolation film for semiconductor devices Jun. 8, 2004
6730569 Field effect transistor with improved isolation structures May. 4, 2004
6706638 Method of forming opening in dielectric layer Mar. 16, 2004
6642120 Semiconductor circuit Nov. 4, 2003
6620704 Method of fabricating low stress semiconductor devices with thermal oxide isolation Sep. 16, 2003
6583044 Buried channel in a substrate and method of making same Jun. 24, 2003
6583018 Method of ion implantation Jun. 24, 2003
6528390 Process for fabricating a non-volatile memory device Mar. 4, 2003
6511893 Radiation hardened semiconductor device Jan. 28, 2003
6482719 Semiconductor field region implant methodology Nov. 19, 2002
6426273 Preprocessing method of metal film forming process Jul. 30, 2002
6372607 Photodiode structure Apr. 16, 2002
6358819 Dual gate oxide process for deep submicron ICS Mar. 19, 2002
6342431 Method for eliminating transfer gate sacrificial oxide Jan. 29, 2002
6340624 Method of forming a circuitry isolation region within a semiconductive wafer Jan. 22, 2002
6313006 Method of field implantation Nov. 6, 2001
6268266 Method for forming enhanced FOX region of low voltage device in high voltage process Jul. 31, 2001
6268298 Method of manufacturing semiconductor device Jul. 31, 2001
RE37158 High performance sub-micron P-channel transistor with germanium implant May. 1, 2001
6194288 Implant N2 into a pad oxide film to mask the active region and grow field oxide without Si3N4 film Feb. 27, 2001
6146976 Method for producing bridged doped zones Nov. 14, 2000
6146972 Method for fabricating semiconductor device Nov. 14, 2000
6133117 Method of forming trench isolation for high voltage device Oct. 17, 2000
6121115 Methods of fabricating integrated circuit memory devices having wide and narrow channel stop layers Sep. 19, 2000

1 2 3

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