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Class Information
Number: 438/448
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > Utilizing oxidation mask having polysilicon component
Description: Process utilizing a layer in contact with the substrate having a polysilicon containing component which serves as a protective covering during the localized oxidation step.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8551866 Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing Oct. 8, 2013
8486840 Inverse spacer processing Jul. 16, 2013
8461005 Method of manufacturing doping patterns Jun. 11, 2013
8354326 Precision trench formation through oxide region formation for a semiconductor device Jan. 15, 2013
8263473 Method of forming semiconductor devices Sep. 11, 2012
8138060 Wafer Mar. 20, 2012
7927969 Cleaning of photolithography masks Apr. 19, 2011
7888234 Method for manufacturing a semiconductor body with a trench and semiconductor body with a trench Feb. 15, 2011
7871896 Precision trench formation through oxide region formation for a semiconductor device Jan. 18, 2011
7816218 Selective deposition of amorphous silicon films on metal gates Oct. 19, 2010
7723206 Photodiode May. 25, 2010
7648878 Method for fabricating semiconductor device with recess gate Jan. 19, 2010
7632736 Self-aligned contact formation utilizing sacrificial polysilicon Dec. 15, 2009
7601610 Method for manufacturing a high integration density power MOS device Oct. 13, 2009
7510980 Method for manufacturing semiconductor device Mar. 31, 2009
7488671 Nanostructure arrays and methods of making same Feb. 10, 2009
7413963 Method of edge bevel rinse Aug. 19, 2008
7402474 Manufacturing method of semiconductor device Jul. 22, 2008
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces Oct. 9, 2007
7259026 Method and apparatus for processing organosiloxane film Aug. 21, 2007
7235460 Method of forming active and isolation areas with split active patterning Jun. 26, 2007
7102184 Image device and photodiode structure Sep. 5, 2006
7071115 Use of multiple etching steps to reduce lateral etch undercut Jul. 4, 2006
7056806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces Jun. 6, 2006
7045437 Method for fabricating shallow trenches May. 16, 2006
6943088 Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding Sep. 13, 2005
6773975 Formation of a shallow trench isolation structure in integrated circuits Aug. 10, 2004
6670236 Semiconductor device having capacitance element and method of producing the same Dec. 30, 2003
6627516 Method of fabricating a light receiving device Sep. 30, 2003
6566231 Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region May. 20, 2003
6548385 Method for reducing pitch between conductive features, and structure formed using the method Apr. 15, 2003
6534388 Method to reduce variation in LDD series resistance Mar. 18, 2003
6444542 Integrated circuit and method Sep. 3, 2002
6423621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same Jul. 23, 2002
6417074 Method of manufacturing a structure for reducing leakage currents by providing isolation between adjacent regions of an integrated circuit Jul. 9, 2002
6380610 Dislocation free local oxidation of silicon with suppression of narrow space field oxide thinning effect Apr. 30, 2002
6362051 Method of forming ONO flash memory devices using low energy nitrogen implantation Mar. 26, 2002
6350663 Method for reducing leakage currents of active area diodes and source/drain diffusions Feb. 26, 2002
6323105 Method for fabricating an isolation structure including a shallow trench isolation structure and a local-oxidation isolation structure Nov. 27, 2001
6306726 Method of forming field oxide Oct. 23, 2001
6297130 Recessed, sidewall-sealed and sandwiched poly-buffered LOCOS isolation methods Oct. 2, 2001
6204547 Modified poly-buffered isolation Mar. 20, 2001
6204150 Semiconductor device and method of manufacturing semiconductor device wherein field oxide is protected from overetching Mar. 20, 2001
6197662 Semiconductor processing method of forming field isolation oxide using a polybuffered mask which includes a base nitride layer on the substrate, and other semiconductor processing methods Mar. 6, 2001
6136648 Nonvolatile semiconductor memory device and a method of fabricating the same Oct. 24, 2000
6133118 Edge polysilicon buffer LOCOS isolation Oct. 17, 2000
6096613 Method for poly-buffered locos without pitting formation Aug. 1, 2000
6083809 Oxide profile modification by reactant shunting Jul. 4, 2000
6083810 Integrated circuit fabrication process Jul. 4, 2000
5994203 Process for stress reduction in silicon during field isolation Nov. 30, 1999

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