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Class Information
Number: 438/445
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > Preliminary etching of groove > Masking of groove sidewall
Description: Process utilizing a layer in contact with the groove sidewalls which serves as a protective covering during either an etching or oxidation step.










Sub-classes under this class:

Class Number Class Name Patents
438/447 Dopant addition 74
438/446 Polysilicon containing sidewall 61


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5874347 Method for fabricating field oxide isolation region for semiconductor devices Feb. 23, 1999
5866435 Methods of fabricating profiled device isolation trenches in integrated circuits Feb. 2, 1999
5834359 Method of forming an isolation region in a semiconductor substrate Nov. 10, 1998
5834360 Method of forming an improved planar isolation structure in an integrated circuit Nov. 10, 1998
5824594 Integrated circuit device isolating methods including silicon spacers and oxidation barrier films Oct. 20, 1998
5811315 Method of forming and planarizing deep isolation trenches in a silicon-on-insulator (SOI) structure Sep. 22, 1998
5780353 Method of doping trench sidewalls before trench etching Jul. 14, 1998
5759870 Method of making a surface micro-machined silicon pressure sensor Jun. 2, 1998
5747376 Method for fabricating isolation layer of semiconductor device May. 5, 1998
5721174 Narrow deep trench isolation process with trench filling by oxidation Feb. 24, 1998
5719086 Method for isolating elements of semiconductor device Feb. 17, 1998
5714395 Process for the manufacture of thin films of semiconductor material Feb. 3, 1998
5696022 Method for forming field oxide isolation film Dec. 9, 1997
5686344 Device isolation method for semiconductor device Nov. 11, 1997
5686347 Self isolation manufacturing method Nov. 11, 1997
5686327 Method for fabricating semiconductor device Nov. 11, 1997
5679599 Isolation using self-aligned trench formation and conventional LOCOS Oct. 21, 1997
5643824 Method of forming nitride sidewalls having spacer feet in a locos process Jul. 1, 1997
5637529 Method for forming element isolation insulating film of semiconductor device Jun. 10, 1997
5612249 Post-gate LOCOS Mar. 18, 1997
5538916 Method of manufacturing semiconductor device isolation region Jul. 23, 1996
5538916 Method of manufacturing semiconductor device isolation region Jul. 23, 1996
5510290 Method for forming a field oxide layer in a semiconductor device which prevents bird beak by nitradation of pad oxide Apr. 23, 1996
5504034 Local oxidation method with bird's beak suppression Apr. 2, 1996
5498566 Isolation region structure of semiconductor device and method for fabricating the same Mar. 12, 1996
5472906 Method of forming isolation Dec. 5, 1995
5472904 Thermal trench isolation Dec. 5, 1995
5457067 Process for formation of an isolating layer for a semiconductor device Oct. 10, 1995
5403770 Method for forming a field oxide film in a semiconductor device Apr. 4, 1995
5399520 Method for the formation of field oxide film in semiconductor device Mar. 21, 1995
5397733 Method for the construction of field oxide film in semiconductor device Mar. 14, 1995
5395790 Stress-free isolation layer Mar. 7, 1995
5393693 "Bird-beak-less" field isolation method Feb. 28, 1995
5374584 Method for isolating elements in a semiconductor chip Dec. 20, 1994
5372950 Method for forming isolation regions in a semiconductor memory device Dec. 13, 1994
5371036 Locos technology with narrow silicon trench Dec. 6, 1994
5256895 Pad oxide protect sealed interface isolation Oct. 26, 1993
5248350 Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process Sep. 28, 1993
5246537 Method of forming recessed oxide isolation Sep. 21, 1993
5242854 High performance semiconductor devices and their manufacture Sep. 7, 1993
5229318 Process for buried localized oxidation of a silicon substrate and corresponding integrated circuit Jul. 20, 1993
5182227 Semiconductor device and method for manufacturing the same Jan. 26, 1993
5173444 Method for forming a semiconductor device isolation region Dec. 22, 1992
4986879 Structure and process for forming semiconductor field oxide using a sealing sidewall of consumable nitride Jan. 22, 1991
4981813 Pad oxide protect sealed interface isolation process Jan. 1, 1991
4923563 Semiconductor field oxide formation process using a sealing sidewall of consumable nitride May. 8, 1990
4909897 Local oxidation of silicon process Mar. 20, 1990
4892614 Integrated circuit isolation process Jan. 9, 1990
4863562 Method for forming a non-planar structure on the surface of a semiconductor substrate Sep. 5, 1989
4845048 Method of fabricating semiconductor device Jul. 4, 1989

1 2 3 4










 
 
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