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Class Information
Number: 438/442
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > With epitaxial semiconductor layer formation
Description: Process including a step of epitaxially growing a single crystal semiconductor layer on the substrate.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615390 |
Method and apparatus for forming expitaxial layers |
Nov. 10, 2009 |
| 7560389 |
Method for fabricating semiconductor element |
Jul. 14, 2009 |
| 7554139 |
Semiconductor manufacturing method and semiconductor device |
Jun. 30, 2009 |
| 7534689 |
Stress enhanced MOS transistor and methods for its fabrication |
May. 19, 2009 |
| 7514337 |
Semiconductor device using EPI-layer and method of forming the same |
Apr. 7, 2009 |
| 7407865 |
Epitaxial growth method |
Aug. 5, 2008 |
| 7387941 |
Method for fabricating semiconductor device |
Jun. 17, 2008 |
| 7338881 |
Method for manufacturing semiconductor element |
Mar. 4, 2008 |
| 7232728 |
High quality oxide on an epitaxial layer |
Jun. 19, 2007 |
| 7176101 |
Method of forming isolation oxide layer in semiconductor integrated circuit device |
Feb. 13, 2007 |
| 7078313 |
Method for fabricating an integrated semiconductor circuit to prevent formation of voids |
Jul. 18, 2006 |
| 7060596 |
Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate |
Jun. 13, 2006 |
| 6997985 |
Semiconductor, semiconductor device, and method for fabricating the same |
Feb. 14, 2006 |
| 6723618 |
Methods of forming field isolation structures |
Apr. 20, 2004 |
| 6716719 |
Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions |
Apr. 6, 2004 |
| 6699773 |
Shallow trench isolation type semiconductor device and method of forming the same |
Mar. 2, 2004 |
| 6627515 |
Method of fabricating a non-floating body device with enhanced performance |
Sep. 30, 2003 |
| 6548388 |
Semiconductor device including gate electrode having damascene structure and method of fabricating the same |
Apr. 15, 2003 |
| 6503799 |
Method of manufacturing semiconductor device |
Jan. 7, 2003 |
| 6489193 |
Process for device isolation |
Dec. 3, 2002 |
| 6461887 |
Method to form an inverted staircase STI structure by etch-deposition-etch and selective epitaxial growth |
Oct. 8, 2002 |
| 6436780 |
Semiconductor device |
Aug. 20, 2002 |
| 6410404 |
Process for manufacturing SOI integrated circuits and circuits made thereby |
Jun. 25, 2002 |
| 6352884 |
Method for growing crystals having impurities and crystals prepared thereby |
Mar. 5, 2002 |
| 6297118 |
Vertical bipolar semiconductor power transistor with an interdigitzed geometry, with optimization of the base-to-emitter potential difference |
Oct. 2, 2001 |
| 6284606 |
Process to achieve uniform groove depth in a silicon substrate |
Sep. 4, 2001 |
| 6110803 |
Method for fabricating a high-bias device |
Aug. 29, 2000 |
| 6083520 |
Bioactive feed |
Jul. 4, 2000 |
| 6060372 |
Method for making a semiconductor device with improved sidewall junction capacitance |
May. 9, 2000 |
| 5981359 |
Method of manufacturing semiconductor device having isolation film on SOI substrate |
Nov. 9, 1999 |
| 5970352 |
Field effect transistor having elevated source and drain regions and methods for manufacturing the same |
Oct. 19, 1999 |
| 5953604 |
Methods for making compact P-channel/N-channel transistor structure |
Sep. 14, 1999 |
| 5910019 |
Method of producing silicon layer having surface controlled to be uneven or even |
Jun. 8, 1999 |
| 5824151 |
Vapor deposition method |
Oct. 20, 1998 |
| 5744373 |
Method of manufacturing a semiconductor device |
Apr. 28, 1998 |
| 5686343 |
Process for isolating a semiconductor layer on an insulator |
Nov. 11, 1997 |
| 5683933 |
Method of fabricating a semiconductor device |
Nov. 4, 1997 |
| 5681776 |
Planar selective field oxide isolation process using SEG/ELO |
Oct. 28, 1997 |
| 5637529 |
Method for forming element isolation insulating film of semiconductor device |
Jun. 10, 1997 |
| 5624858 |
Method of manufacturing a semiconductor device with increased breakdown voltage |
Apr. 29, 1997 |
| 5580816 |
Local oxidation process for high field threshold applications |
Dec. 3, 1996 |
| 5565029 |
Method for manufacturing semiconductor device having grown layer on insulating layer |
Oct. 15, 1996 |
| 5541136 |
Method of forming a field oxide film in a semiconductor device |
Jul. 30, 1996 |
| 5512508 |
Method and apparatus for improvement of interconnection capacitance |
Apr. 30, 1996 |
| 5506156 |
Method of fabricating bipolar transistor having high speed and MOS transistor having small size |
Apr. 9, 1996 |
| 5500391 |
Method for making a semiconductor device including diffusion control |
Mar. 19, 1996 |
| 5457067 |
Process for formation of an isolating layer for a semiconductor device |
Oct. 10, 1995 |
| 5455189 |
Method of forming BICMOS structures |
Oct. 3, 1995 |
| 5453396 |
Sub-micron diffusion area isolation with SI-SEG for a DRAM array |
Sep. 26, 1995 |
| 5451530 |
Method for forming integrated circuits having buried doped regions |
Sep. 19, 1995 |
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