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Class Information
Number: 438/442
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > With epitaxial semiconductor layer formation
Description: Process including a step of epitaxially growing a single crystal semiconductor layer on the substrate.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8394704 Method for fabricating a dual-orientation group-IV semiconductor substrate Mar. 12, 2013
8349743 Method for fabricating light emitting device Jan. 8, 2013
8304323 Semiconductor element manufacturing method Nov. 6, 2012
8278176 Selective epitaxial formation of semiconductor films Oct. 2, 2012
8097517 Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS Jan. 17, 2012
8008215 Integration of buried oxide layers with crystalline layers Aug. 30, 2011
7989336 Methods of forming a plurality of conductive lines in the fabrication of integrated circuitry, methods of forming an array of conductive lines, and integrated circuitry Aug. 2, 2011
7932160 Planar oxidation method for producing a localised buried insulator Apr. 26, 2011
7906406 Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured Mar. 15, 2011
7875511 CMOS structure including differential channel stressing layer compositions Jan. 25, 2011
7863152 Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure Jan. 4, 2011
7858529 Treatment method of semiconductor, method for manufacturing MOS, and MOS structure Dec. 28, 2010
7851327 Method of manufacturing a semiconductor device including forming a single-crystalline semiconductor material in a first area and forming a second device isolation pattern on a second area Dec. 14, 2010
7655533 Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same Feb. 2, 2010
7615390 Method and apparatus for forming expitaxial layers Nov. 10, 2009
7560389 Method for fabricating semiconductor element Jul. 14, 2009
7554139 Semiconductor manufacturing method and semiconductor device Jun. 30, 2009
7534689 Stress enhanced MOS transistor and methods for its fabrication May. 19, 2009
7514337 Semiconductor device using EPI-layer and method of forming the same Apr. 7, 2009
7407865 Epitaxial growth method Aug. 5, 2008
7387941 Method for fabricating semiconductor device Jun. 17, 2008
7338881 Method for manufacturing semiconductor element Mar. 4, 2008
7232728 High quality oxide on an epitaxial layer Jun. 19, 2007
7176101 Method of forming isolation oxide layer in semiconductor integrated circuit device Feb. 13, 2007
7078313 Method for fabricating an integrated semiconductor circuit to prevent formation of voids Jul. 18, 2006
7060596 Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate Jun. 13, 2006
6997985 Semiconductor, semiconductor device, and method for fabricating the same Feb. 14, 2006
6723618 Methods of forming field isolation structures Apr. 20, 2004
6716719 Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions Apr. 6, 2004
6699773 Shallow trench isolation type semiconductor device and method of forming the same Mar. 2, 2004
6627515 Method of fabricating a non-floating body device with enhanced performance Sep. 30, 2003
6548388 Semiconductor device including gate electrode having damascene structure and method of fabricating the same Apr. 15, 2003
6503799 Method of manufacturing semiconductor device Jan. 7, 2003
6489193 Process for device isolation Dec. 3, 2002
6461887 Method to form an inverted staircase STI structure by etch-deposition-etch and selective epitaxial growth Oct. 8, 2002
6436780 Semiconductor device Aug. 20, 2002
6410404 Process for manufacturing SOI integrated circuits and circuits made thereby Jun. 25, 2002
6352884 Method for growing crystals having impurities and crystals prepared thereby Mar. 5, 2002
6297118 Vertical bipolar semiconductor power transistor with an interdigitzed geometry, with optimization of the base-to-emitter potential difference Oct. 2, 2001
6284606 Process to achieve uniform groove depth in a silicon substrate Sep. 4, 2001
6110803 Method for fabricating a high-bias device Aug. 29, 2000
6083520 Bioactive feed Jul. 4, 2000
6060372 Method for making a semiconductor device with improved sidewall junction capacitance May. 9, 2000
5981359 Method of manufacturing semiconductor device having isolation film on SOI substrate Nov. 9, 1999
5970352 Field effect transistor having elevated source and drain regions and methods for manufacturing the same Oct. 19, 1999
5953604 Methods for making compact P-channel/N-channel transistor structure Sep. 14, 1999
5910019 Method of producing silicon layer having surface controlled to be uneven or even Jun. 8, 1999
5824151 Vapor deposition method Oct. 20, 1998
5744373 Method of manufacturing a semiconductor device Apr. 28, 1998
5686343 Process for isolating a semiconductor layer on an insulator Nov. 11, 1997

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