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Class Information
Number: 438/441
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > With electrolytic treatment step
Description: Process including a step of electrochemical treatment of the semiconductor substrate (e.g., such as to affect etching or coating action thereon).










Patents under this class:

Patent Number Title Of Patent Date Issued
8178416 Method for making an electrically conducting mechanical interconnection member May. 15, 2012
7928011 Method for structuring a substrate using a metal mask layer formed using a galvanization process Apr. 19, 2011
7785982 Structures containing electrodeposited germanium and methods for their fabrication Aug. 31, 2010
7749868 Process of forming a curved profile on a semiconductor substrate Jul. 6, 2010
7718231 Thin buried oxides by low-dose oxygen implantation into modified silicon May. 18, 2010
7566482 SOI by oxidation of porous silicon Jul. 28, 2009
7176514 Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material Feb. 13, 2007
6677218 Method for filling trenches in integrated semiconductor circuits Jan. 13, 2004
6627500 Method of fabricating nitride read only memory Sep. 30, 2003
6559069 Process for the electrochemical oxidation of a semiconductor substrate May. 6, 2003
6429151 Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers Aug. 6, 2002
6352893 Low temperature self-aligned collar formation Mar. 5, 2002
6143627 Method for electrochemical oxidation of silicon Nov. 7, 2000
5877069 Method for electrochemical local oxidation of silicon Mar. 2, 1999
5863826 CMOS isolation utilizing enhanced oxidation of recessed porous silicon formed by light ion implantation Jan. 26, 1999
5773353 Method of fabricating a semiconductor substrate Jun. 30, 1998
5604144 Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide Feb. 18, 1997
5156896 Silicon substrate having porous oxidized silicon layers and its production method Oct. 20, 1992
5135884 Method of producing isoplanar isolated active regions Aug. 4, 1992
4369561 Process for aligning diffusion masks with respect to isolating walls of coffers in integrated circuits Jan. 25, 1983
4180416 Thermal migration-porous silicon technique for forming deep dielectric isolation Dec. 25, 1979
4111720 Method for forming a non-epitaxial bipolar integrated circuit Sep. 5, 1978
4096619 Semiconductor scribing method Jun. 27, 1978
4056415 Method for providing electrical isolating material in selected regions of a semiconductive material Nov. 1, 1977
4016017 Integrated circuit isolation structure and method for producing the isolation structure Apr. 5, 1977
4014714 Method of producing a monolithic semiconductor device Mar. 29, 1977
3954523 Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation May. 4, 1976











 
 
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