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Class Information
Number: 438/440
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Recessed oxide by localized oxidation (i.e., locos) > Including nondopant implantation
Description: Process including a step of ion implanting a nonelectrically active impurity species into any region

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8587039 Method of forming a semiconductor device featuring a gate stressor and semiconductor device Nov. 19, 2013
8476144 Method for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in edge regions, and a mask for facilitating such artifact reduction/eliminatio Jul. 2, 2013
8409975 Method for decreasing polysilicon gate resistance in a carbon co-implantation process Apr. 2, 2013
8174074 Asymmetric embedded silicon germanium field effect transistor May. 8, 2012
7883956 Method of forming coplanar active and isolation regions and structures thereof Feb. 8, 2011
7767583 Method to improve uniformity of chemical mechanical polishing planarization Aug. 3, 2010
7727831 Semiconductor device Jun. 1, 2010
7718231 Thin buried oxides by low-dose oxygen implantation into modified silicon May. 18, 2010
7718506 Isolation structure for MOS transistor and method for forming the same May. 18, 2010
7648878 Method for fabricating semiconductor device with recess gate Jan. 19, 2010
7611975 Method of implanting a substrate and an ion implanter for performing the method Nov. 3, 2009
7566482 SOI by oxidation of porous silicon Jul. 28, 2009
7393756 Method for fabricating a trench isolation structure having a high aspect ratio Jul. 1, 2008
7338857 Increasing adherence of dielectrics to phase change materials Mar. 4, 2008
7192840 Semiconductor device fabrication method using oxygen ion implantation Mar. 20, 2007
7189629 Method for isolating semiconductor devices Mar. 13, 2007
7074692 Method for reducing a short channel effect for NMOS devices in SOI circuits Jul. 11, 2006
6967147 Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductor Nov. 22, 2005
6887751 MOSFET performance improvement using deformation in SOI structure May. 3, 2005
6808967 Method for producing a buried layer of material in another material Oct. 26, 2004
6806163 Ion implant method for topographic feature corner rounding Oct. 19, 2004
6784078 Methods for manufacturing semiconductor devices and semiconductor devices Aug. 31, 2004
6784009 Electrode patterning in OLED devices Aug. 31, 2004
6774016 Silicon-on-insulator (SOI) substrate and method for manufacturing the same Aug. 10, 2004
6746936 Method for forming isolation film for semiconductor devices Jun. 8, 2004
6727142 Orientation independent oxidation of nitrided silicon Apr. 27, 2004
6656815 Process for implanting a deep subcollector with self-aligned photo registration marks Dec. 2, 2003
6596593 Method of manufacturing semiconductor device employing oxygen implantation Jul. 22, 2003
6593205 Patterned SOI by formation and annihilation of buried oxide regions during processing Jul. 15, 2003
6548372 Forming sidewall oxide layers for trench isolation Apr. 15, 2003
6537887 Integrated circuit fabrication Mar. 25, 2003
6528434 Method of forming a silicon oxide layer using pulsed nitrogen plasma implantation Mar. 4, 2003
6509248 Fabrication of semiconductor gettering structures by ion implantation Jan. 21, 2003
6489205 Semiconductor device and method for manufacturing the same Dec. 3, 2002
6455405 Using implantation method to control gate oxide thickness on dual oxide semiconductor devices Sep. 24, 2002
6432798 Extension of shallow trench isolation by ion implantation Aug. 13, 2002
6429091 Patterned buried insulator Aug. 6, 2002
6420749 Trench field shield in trench isolation Jul. 16, 2002
6365490 Process to improve the flow of oxide during field oxidation by fluorine doping Apr. 2, 2002
6358819 Dual gate oxide process for deep submicron ICS Mar. 19, 2002
6335262 Method for fabricating different gate oxide thicknesses within the same chip Jan. 1, 2002
6333243 Method for growing field oxide to minimize birds' beak length Dec. 25, 2001
6313006 Method of field implantation Nov. 6, 2001
6309949 Semiconductor isolation process to minimize weak oxide problems Oct. 30, 2001
6297113 Method of manufacturing a semiconductor device, and a semiconductor device manufactured thereby Oct. 2, 2001
6284626 Angled nitrogen ion implantation for minimizing mechanical stress on side walls of an isolation trench Sep. 4, 2001
6268266 Method for forming enhanced FOX region of low voltage device in high voltage process Jul. 31, 2001
6221743 Method for processing substrate Apr. 24, 2001
6194288 Implant N2 into a pad oxide film to mask the active region and grow field oxide without Si3N4 film Feb. 27, 2001
6174787 Silicon corner rounding by ion implantation for shallow trench isolation Jan. 16, 2001

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