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Class Information
Number: 438/436
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Grooved and refilled with deposited dielectric material > Multiple insulative layers in groove > Reflow of insulator
Description: Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material including a step of redistributing insulative material by the viscous flow of the insulative material when exposed to high temperature.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8486792 Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device Jul. 16, 2013
8476144 Method for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in edge regions, and a mask for facilitating such artifact reduction/eliminatio Jul. 2, 2013
8461016 Integrated circuit devices and methods of forming memory array and peripheral circuitry isolation Jun. 11, 2013
8440580 Method of fabricating silicon nitride gap-filling layer May. 14, 2013
8318584 Oxide-rich liner layer for flowable CVD gapfill Nov. 27, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8232176 Dielectric deposition and etch back processes for bottom up gapfill Jul. 31, 2012
8217472 Semiconductor device with isolation trench liner Jul. 10, 2012
8202784 Semiconductor device having a high aspect ratio isolation trench and method for manufacturing the same Jun. 19, 2012
8114779 Silicon dioxide cantilever support and method for silicon etched structures Feb. 14, 2012
8115254 Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same Feb. 14, 2012
8115272 Silicon dioxide cantilever support and method for silicon etched structures Feb. 14, 2012
8093678 Semiconductor device and method of fabricating the same Jan. 10, 2012
8043882 Method of making microminiature moving device Oct. 25, 2011
8034712 Method of fabricating dual damascene structure Oct. 11, 2011
8026177 Silicon dioxide cantilever support and method for silicon etched structures Sep. 27, 2011
8026151 Method with high gapfill capability for semiconductor devices Sep. 27, 2011
8017496 Methods of manufacturing a semiconductor device Sep. 13, 2011
7998832 Semiconductor device with isolation trench liner, and related fabrication methods Aug. 16, 2011
7968425 Isolation regions Jun. 28, 2011
7919390 Isolation structure in memory device and method for fabricating the isolation structure Apr. 5, 2011
7915139 CVD flowable gap fill Mar. 29, 2011
7888233 Flowable film dielectric gap fill process Feb. 15, 2011
7736992 Isolation trench geometry for image sensors Jun. 15, 2010
7678665 Deep STI trench and SOI undercut enabling STI oxide stressor Mar. 16, 2010
7659181 Sub-micron space liner and filler process Feb. 9, 2010
7648921 Method of forming dielectric layer Jan. 19, 2010
7608519 Method of fabricating trench isolation of semiconductor device Oct. 27, 2009
7524735 Flowable film dielectric gap fill process Apr. 28, 2009
7510946 Method for filling of nanoscale holes and trenches and for planarizing of a wafer surface Mar. 31, 2009
7482244 Method of preventing a peeling issue of a high stressed thin film Jan. 27, 2009
7476561 Method of making microminiature moving device Jan. 13, 2009
7442621 Semiconductor process for forming stress absorbent shallow trench isolation structures Oct. 28, 2008
7375004 Method of making an isolation trench and resulting isolation trench May. 20, 2008
7354818 Process for high voltage superjunction termination Apr. 8, 2008
7332409 Methods of forming trench isolation layers using high density plasma chemical vapor deposition Feb. 19, 2008
7211499 Methods of forming silicon dioxide layers, and methods of forming trench isolation regions May. 1, 2007
7169697 Semiconductor device and manufacturing method of the same Jan. 30, 2007
7163869 Shallow trench isolation structure with converted liner layer Jan. 16, 2007
7157351 Ozone vapor clean method Jan. 2, 2007
7118987 Method of achieving improved STI gap fill with reduced stress Oct. 10, 2006
7112513 Sub-micron space liner and densification process Sep. 26, 2006
7078313 Method for fabricating an integrated semiconductor circuit to prevent formation of voids Jul. 18, 2006
7018908 Methods of forming silicon dioxide layers, and methods of forming trench isolation regions Mar. 28, 2006
6984569 Shallow trench isolation (STI) region with high-K liner and method of formation Jan. 10, 2006
6949447 Method for fabricating isolation layer in semiconductor device Sep. 27, 2005
6872631 Method of forming a trench isolation Mar. 29, 2005
6838356 Method of forming a trench isolation Jan. 4, 2005
6828210 Method of forming a device isolation trench in an integrated circuit device Dec. 7, 2004
6808956 Thin micromachined structures Oct. 26, 2004

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